VS-HFA140NJ60CPBF

VS-HFA140NJ60CPbF www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 167 A FEATURES Lug terminal anode 1 • Very low Qrr and trr Lug terminal anode 2 • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Base common cathode TO-244 • Reduced RFI and EMI • Reduced snubbing DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF (maximum) 167 A VR 600 V IF(DC) at TC 84 A at 100 °C Package TO-244 Circuit configuration Two diodes common cathode HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dIF/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Continuous forward current IF TEST CONDITIONS VALUES UNITS 600 V TC = 25 °C 167 TC = 100 °C 84 Single pulse forward current IFSM Limited by junction temperature 400 Non-repetitive avalanche energy EAS L = 100 μH, duty cycle limited by maximum TJ 330 Maximum power dissipation PD Operating junction and storage temperature range TC = 25 °C 310 TC = 100 °C 132 TJ, TStg A μJ W -55 to +150 °C ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR Maximum forward voltage VFM IF = 140 A Maximum reverse leakage current IRM TJ = 125 °C, VR = 480 V See fig. 2 Junction capacitance CT VR = 200 V See fig. 3 Series inductance LS From top of terminal hole to mounting plane IR = 100 μA IF = 70 A See fig. 1 IF = 70 A, TJ = 125 °C MIN. TYP. MAX. UNITS 600 - - - 1.37 1.89 - 1.58 2.1 - 1.29 1.54 - 1.2 4 mA - 140 250 pF - 7.0 - nH V Revision: 05-Jan-18 Document Number: 94051 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140NJ60CPbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time (fig. 5) trr Peak recovery current (fig. 6) TYP. MAX. - 33 - TJ = 25 °C - 80 120 TJ = 125 °C - 140 220 - 8.5 15 - 14 25 TJ = 125 °C TJ = 25 °C Qrr dI(rec)M/dt Peak rate of recovery current (fig. 8) MIN. TJ = 25 °C IRRM Reverse recovery charge (fig. 7) TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V IF = 70 A dIF/dt = 200 A/μs VR = 200 V UNITS ns A - 340 900 TJ = 125 °C - 980 2300 TJ = 25 °C - 300 - TJ = 125 °C - 220 - SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -55 - 150 °C - - 0.38 - - 0.19 nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range per leg Thermal resistance, junction to case RthJC per module Typical thermal resistance, case to heatsink RthCS Weight °C/W K/W 0.10 - - 68 - g oz. - 2.4 - Mounting torque (1) 30 (3.4) - 40 (4.6) Mounting torque center hole 12 (1.4) - 18 (2.1) Terminal torque 30 (3.4) - 40 (4.6) Vertical pull - - 80 2" lever pull - - 35 lbf · in (N · m) lbf · in 10 000 1000 150 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Note (1) Mounting surface must be smooth, flat, free or burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5 - 10 lbf in steps until desired or maximum torque limits are reached 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.2 0.7 1.2 1.7 2.2 2.7 3.2 3.7 1000 125 °C 100 10 25 °C 1 0.1 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) Revision: 05-Jan-18 Document Number: 94051 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140NJ60CPbF www.vishay.com Vishay Semiconductors 60 50 1000 100 30 20 140 A, 25°C 70 A, 25°C 30 A, 25°C 10 10 0 1 10 100 1000 100 1000 VR - Reverse Voltage (V) dIFdt (A/μs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) 160 3500 140 3000 120 2500 140 A, 125°C 100 Qrr (nC) Maximum Allowable Case Temperature (°C) 140 A, 125°C 70 A, 125°C 30 A, 125°C 40 IRRM (A) CT - Junction Capacitance (pF) 10 000 DC 80 2000 70 A, 125°C 1500 30 A, 125°C 60 1000 140 A, 25°C 40 70 A, 25°C 500 20 0 0 30 60 90 120 150 30 A, 25°C 0 100 180 1000 IF(DC) - DC Forward Current (A) dIFdt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 250 10 000 200 150 dI(rec)M/dt (A/μs) trr (ns) 140 A, 125°C 70 A, 125°C 30 A, 125°C 100 140 A, 25°C 70 A, 25°C 50 140 A, 125°C 70 A, 125°C 30 A, 125°C 1000 140 A, 25°C 70 A, 25°C 30 A, 25°C 30 A, 25°C 0 100 100 1000 dIFdt (A/μs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) 100 1000 dIFdt (A/μs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) Revision: 05-Jan-18 Document Number: 94051 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140NJ60CPbF www.vishay.com Vishay Semiconductors ZthJC - Thermal Response 1 D = 0.50 0.33 0.1 0.25 0.17 0.08 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.001 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 05-Jan-18 Document Number: 94051 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA140NJ60CPbF www.vishay.com Vishay Semiconductors L = 100 µH IL(PK) High-speed switch D.U.T. Freewheel diode Rg = 25 Ω + Current monitor Decay time Vd = 50 V V(AVAL) VR(RATED) Fig. 12 - Avalanche Test Circuit and Waveforms ORDERING INFORMATION TABLE Device code VS- HFA 140 NJ 60 C PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Average current rating 4 - NJ = TO-244 5 - Voltage rating (600 V) 6 - C = two diodes common cathode 7 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 05-Jan-18 Document Number: 94051 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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