VS-HFA15PB60-N3
www.vishay.com
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
1
• Designed and qualified
JEDEC®-JESD 47
3
according
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-247AC 2L
Base
cathode
BENEFITS
2
1
Cathode
•
•
•
•
•
3
Anode
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
VS-HFA15PB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A continuous current, the
VS-HFA15PB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15PB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRIMARY CHARACTERISTICS
IF(AV)
15 A
VR
600 V
VF at IF
1.2 V
trr typ.
19 ns
TJ max.
150 °C
Package
TO-247AC 2L
Circuit configuration
Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Maximum continuous forward current
IF
Single pulse forward current
IFSM
Maximum repetitive forward current
IFRM
Maximum power dissipation
Operating junction and storage temperature range
PD
TJ, TStg
TEST CONDITIONS
VALUES
UNITS
600
V
TC = 100 °C
15
tp = 10 ms
150
A
60
TC = 25 °C
74
TC = 100 °C
29
-55 to +150
W
°C
Revision: 29-Nov-2019
Document Number: 94052
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA15PB60-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
Maximum forward voltage
VFM
IF = 30 A
MIN.
TYP.
MAX.
600
-
-
IF = 15 A
UNITS
-
1.3
1.7
-
1.5
2.0
IF = 15 A, TJ = 125 °C
-
1.2
1.6
VR = VR rated
-
1.0
10
-
400
1000
-
25
50
pF
-
12
-
nH
MIN.
TYP.
MAX.
UNITS
-
19
-
See fig. 1
Maximum reverse
leakage current
IRM
Junction capacitance
CT
VR = 200 V
Series inductance
LS
Measured lead to lead 5 mm from package body
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
See fig. 3
V
μA
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during tb
See fig. 8
SYMBOL
TEST CONDITIONS
trr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
trr1
TJ = 25 °C
-
42
60
trr2
TJ = 125 °C
-
74
120
-
4.0
6.0
-
6.5
10
-
80
180
-
220
600
IRRM1
TJ = 25 °C
IRRM2
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 200 V
Qrr1
TJ = 25 °C
Qrr2
TJ = 125 °C
dI(rec)M/dt1
TJ = 25 °C
-
188
-
dI(rec)M/dt2
TJ = 125 °C
-
160
-
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Lead temperature
Tlead
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
Thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
-
-
300
°C
-
-
1.7
Typical socket mount
-
-
40
Mounting surface, flat, smooth and greased
-
0.25
-
-
6.0
-
-
0.21
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
0.063" from case (1.6 mm) for 10 s
Weight
6.0
(5.0)
Mounting torque
Marking device
Case style TO-247AC 2L
K/W
g
HFA15PB60
Revision: 29-Nov-2019
Document Number: 94052
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA15PB60-N3
Vishay Semiconductors
100
10 000
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
www.vishay.com
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
1.0
TJ = 150 °C
1000
TJ = 125 °C
100
10
1
TJ = 25 °C
0.1
0.01
1.2
1.4
1.6
1.8
2.0
2.2
0
2.4
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Response
10
1
PDM
0.1
Single pulse
(thermal response)
0.01
0.00001
0.0001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 29-Nov-2019
Document Number: 94052
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA15PB60-N3
www.vishay.com
Vishay Semiconductors
100
800
IF = 30 A
IF = 15 A
IF = 5 A
600
Qrr (nC)
trr (ns)
80
VR = 200 V
TJ = 125 °C
TJ = 25 °C
60
40
IF = 30 A
IF = 15 A
IF = 5 A
400
200
20
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
0
100
1000
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
25
10 000
15
dI(rec)M/dt (A/µs)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
20
Irr (A)
1000
dIF/dt (A/µs)
IF = 30 A
IF = 15 A
IF = 5 A
10
IF = 30 A
IF = 15 A
IF = 5 A
1000
5
0
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
100
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 29-Nov-2019
Document Number: 94052
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA15PB60-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
HF
A
15
PB
60
-N3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
HEXFRED® family
3
-
Electron irradiated
4
-
Current rating (15 = 15 A)
5
-
PB = TO-247AC, 2 pins
6
-
Voltage rating: (60 = 600 V)
7
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-HFA15PB60-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96144
Part marking information
www.vishay.com/doc?95648
Revision: 29-Nov-2019
Document Number: 94052
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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