VS-HFA15TB60SR-M3

VS-HFA15TB60S-M3, VS-HFA15TB60-1-M3 www.vishay.com Vishay Semiconductors HEXFRED®, Ultrafast Soft Recovery Diode, 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 1 • Designed and qualified for industrial level 1 3 D2PAK (TO-263AB) 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-262AA 3 Base cathode 2 BENEFITS 2 • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation 1 N/C 3 Anode VS-HFA15 TB60S-M3 • Reduced snubbing 3 Anode 1 N/C • Reduced parts count VS-HFA15 TB60-1-M3 DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) 15 A VR 600 V VF at IF 1.2 V trr (typ.) 23 ns TJ max. 150 °C Package D2PAK (TO-263AB), TO-262AA Circuit configuration Single VS-HFA15TB60S, VS-HFA15TB60-1 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A continuous current, the VS-HFA15TB60S, VS-HFA15TB60-1 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA15TB60S, VS-HFA15TB60-1 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL TEST CONDITIONS VR IF TC = 100 °C VALUES UNITS 600 V 15 Single pulse forward current IFSM 150 Maximum repetitive forward current IFRM 60 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 25 °C 74 TC = 100 °C 29 -55 to +150 A W °C Revision: 16-Dec-2021 Document Number: 96313 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA15TB60S-M3, VS-HFA15TB60-1-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Maximum forward voltage VFM TEST CONDITIONS IR = 100 μA IF = 15 A IF = 30 A See fig. 1 MIN. TYP. MAX. 600 - - - 1.3 1.7 - 1.5 2.0 1.6 UNITS V IF = 15 A, TJ = 125 °C - 1.2 VR = VR rated - 1.0 10 - 400 1000 - 25 50 pF - 8.0 - nH UNITS Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 23 - trr1 TJ = 25 °C - 50 60 trr2 TJ = 125 °C - 105 120 IRRM1 TJ = 25 °C - 4.5 6.0 IRRM2 TJ = 125 °C - 6.5 10 Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 dI(rec)M/dt2 IF = 15 A dIF/dt = 200 A/μs VR = 200 V ns A - 84 180 - 241 600 TJ = 25 °C - 188 - TJ = 125 °C - 160 - MIN. TYP. MAX. UNITS - - 300 °C - - 1.7 nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Lead temperature Tlead Thermal resistance, junction-to-case RthJC Thermal resistance, junction-to-ambient RthJA Typical socket mount - - 80 Thermal resistance, case-to-heatsink RthCS Mounting surface, flat, smooth, and greased - 0.5 - - 2.0 - g - 0.07 - oz. 0.063" from case (1.6 mm) for 10 s Weight Marking device Case style D2PAK (TO-263AB) HFA15TB60S Case style TO-262AA HFA15TB60-1 K/W Revision: 16-Dec-2021 Document Number: 96313 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA15TB60S-M3, VS-HFA15TB60-1-M3 Vishay Semiconductors 100 10 000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 1.0 TJ = 150 °C 1000 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 1.2 1.4 1.6 2.0 1.8 2.2 0 2.4 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM Single pulse (thermal response) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 16-Dec-2021 Document Number: 96313 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA15TB60S-M3, VS-HFA15TB60-1-M3 www.vishay.com Vishay Semiconductors 100 10 000 IF = 30 A IF = 15 A IF = 5 A dI(rec)M/dt (A/μs) trr (ns) 80 60 40 20 IF = 30 A IF = 15 A IF = 5 A 1000 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 1000 100 100 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt 25 VR = 200 V TJ = 125 °C TJ = 25 °C Irr (A) 20 15 IF = 30 A IF = 15 A IF = 5 A 10 5 0 100 1000 dIF/dt (A/μs) Fig. 6 - Typical Recovery Current vs. dIF/dt 800 700 VR = 200 V TJ = 125 °C TJ = 25 °C Qrr (nC) 600 500 400 IF = 30 A IF = 15 A IF = 5 A 300 200 100 0 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt Revision: 16-Dec-2021 Document Number: 96313 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA15TB60S-M3, VS-HFA15TB60-1-M3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 16-Dec-2021 Document Number: 96313 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA15TB60S-M3, VS-HFA15TB60-1-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 15 TB 60 S L -M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (15 = 15 A) 5 - Package: TB = TO-220 6 - Voltage rating (60 = 600 V) S = D2PAK (TO-263AB) 7 8 - -1 = TO-262AA - None = tube (50 pieces) L = tape and reel (left oriented, for D2PAK (TO-263AB) package ) R = tape and reel (right oriented, for D2PAK (TO-263AB) package) 9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-HFA15TB60S-M3 50 Antistatic plastic tube VS-HFA15TB60SL-M3 800 13" diameter reel VS-HFA15TB60SR-M3 800 13" diameter reel VS-HFA15TB60-1-M3 50 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information D2PAK (TO-263AB) www.vishay.com/doc?96164 TO-262AA www.vishay.com/doc?96165 D2PAK (TO-263AB) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 Packaging information www.vishay.com/doc?96424 SPICE model www.vishay.com/doc?95357 Revision: 16-Dec-2021 Document Number: 96313 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-262AA DIMENSIONS in millimeters and inches Modified JEDEC® outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 2 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 3 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC® TO-262 except A1 (max.), b (min., max.), b1 (min.), b2 (max.), c (min.), c1(min.), c2 (max.), D (min.), E (max.), L1 (max.), L2 (min., max.) Revision: 30-Nov-17 Document Number: 96165 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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