VS-HFA16PB120-N3
www.vishay.com
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 16 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
1
• Designed and qualified
JEDEC®-JESD 47
3
according
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-247AC 2L
Base
cathode
BENEFITS
2
1
Cathode
•
•
•
•
•
3
Anode
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
VS-HFA16PB120... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16PB120... is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the HEXFRED® product line
features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to “snap-off”
during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16PB120... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRIMARY CHARACTERISTICS
IF(AV)
16 A
VR
1200 V
VF at IF
2.3 V
trr typ.
30 ns
TJ max.
150 °C
Package
TO-247AC 2L
Circuit configuration
Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
SYMBOL
IF
Single pulse forward current
IFSM
Maximum repetitive forward current
IFRM
Maximum power dissipation
Operating junction and storage temperature range
TEST CONDITIONS
VR
PD
TJ, TStg
VALUES
UNITS
1200
V
TC = 100 °C
16
tp = 10 ms
190
TC = 25 °C
151
TC = 100 °C
60
A
64
-55 to +150
W
°C
Revision: 29-Nov-2019
Document Number: 94057
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16PB120-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
Maximum forward voltage
VFM
IF = 32 A
IF = 16 A
See fig. 1
MIN.
TYP.
MAX.
1200
-
-
-
2.5
3.0
-
3.2
3.93
UNITS
V
IF = 16 A, TJ = 125 °C
-
2.3
2.7
VR = VR rated
-
0.75
20
-
375
2000
-
27
40
pF
-
8.0
-
nH
UNITS
Maximum reverse
leakage current
IRM
Junction capacitance
CT
VR = 200 V
Series inductance
LS
Measured lead to lead 5 mm from package body
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
See fig. 3
μA
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during tb
See fig. 8
SYMBOL
MIN.
TYP.
MAX.
trr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TEST CONDITIONS
-
30
-
trr1
TJ = 25 °C
-
90
135
trr2
TJ = 125 °C
-
164
245
IRRM1
TJ = 25 °C
-
5.8
10
IRRM2
TJ = 125 °C
-
8.3
15
IF = 16 A
dIF/dt = 200 A/μs
VR = 200 V
ns
A
Qrr1
TJ = 25 °C
-
260
675
Qrr2
TJ = 125 °C
-
680
1838
dI(rec)M/dt1
TJ = 25 °C
-
120
-
dI(rec)M/dt2
TJ = 125 °C
-
76
-
MIN.
TYP.
MAX.
UNITS
-
-
300
°C
-
-
0.83
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
Lead temperature
Tlead
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth, and greased
-
0.50
-
-
2.0
-
g
-
0.07
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Weight
Mounting torque
Marking device
Case style TO-247AC 2L
K/W
HFA16PB120
Revision: 29-Nov-2019
Document Number: 94057
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16PB120-N3
Vishay Semiconductors
1000
100
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
www.vishay.com
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
TJ = 150 °C
100
TJ = 125 °C
10
1
0.1
0.1
TJ = 25 °C
0.01
0
2
4
6
8
0
200
400
600
800
1000
1200
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
1
1
10
100
1000
10 000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Response
1
0.1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
.
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 29-Nov-2019
Document Number: 94057
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16PB120-N3
www.vishay.com
Vishay Semiconductors
270
1600
VR = 200 V
TJ = 125 °C
TJ = 25 °C
220
1200
IF = 16 A
IF = 8 A
170
Qrr (nC)
trr (ns)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
1400
120
IF = 16 A
IF = 8 A
1000
800
600
400
70
200
20
100
0
100
1000
dIF/dt (A/µs)
diF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
30
10 000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
20
di(rec)M/dt (A/µs)
25
IRR (A)
1000
IF = 16 A
IF = 8 A
15
10
VR = 200 V
TJ = 125 °C
TJ = 25 °C
1000
IF = 16 A
IF = 8 A
100
5
0
100
10
100
1000
1000
diF/dt (A/µs)
diF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 29-Nov-2019
Document Number: 94057
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16PB120-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
HF
A
16
PB
120
-N3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
HEXFRED® family
3
-
Electron irradiated
4
-
Current rating (16 = 16 A)
5
-
PB = TO-247AC, 2 pins
6
-
Voltage rating: (120 = 1200 V)
Environmental digit:
7
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-HFA16PB120-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96144
Part marking information
www.vishay.com/doc?95648
Revision: 29-Nov-2019
Document Number: 94057
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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