VS-HFA16PB120HN3

VS-HFA16PB120HN3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 16 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 TO-247AC modified BENEFITS • • • • • Cathode to base 2 1 Cathode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 3 Anode PRIMARY CHARACTERISTICS IF(AV) 16 A VR 1200 V VF at IF 2.3 V trr typ. 30 ns TJ max. 150 °C Package TO-247AC modified (2 pins) Circuit configuration Single VS-HFA16PB120HN3 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the VS-HFA16PB120HN3 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA16PB120HN3 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL TEST CONDITIONS VR IF TC = 100 °C VALUES UNITS 1200 V 16 Single pulse forward current IFSM 190 Maximum repetitive forward current IFRM 64 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 25 °C 151 TC = 100 °C 60 -55 to +150 A W °C Revision: 25-Sep-2019 Document Number: 94717 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PB120HN3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 μA Maximum forward voltage VFM IF = 32 A IF = 16 A See fig. 1 MIN. TYP. MAX. 1200 - - - 2.5 3.0 - 3.2 3.93 UNITS V IF = 16 A, TJ = 125 °C - 2.3 2.7 VR = VR rated - 0.75 20 - 375 2000 - 27 40 pF - 8.0 - nH UNITS Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery  current during tb See fig. 8 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 30 - trr1 TJ = 25 °C - 90 - trr2 TJ = 125 °C - 164 - IRRM1 TJ = 25 °C - 5.8 - IRRM2 TJ = 125 °C - 8.3 - IF = 16 A dIF/dt = 200 A/μs VR = 200 V ns A Qrr1 TJ = 25 °C - 260 - Qrr2 TJ = 125 °C - 680 - dI(rec)M/dt1 TJ = 25 °C - 120 - dI(rec)M/dt2 TJ = 125 °C - 76 - MIN. TYP. MAX. UNITS - - 300 °C - - 0.83 nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Lead temperature Tlead Thermal resistance,  junction to case RthJC Thermal resistance,  junction to ambient RthJA Typical socket mount - - 80 Thermal resistance,  case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.50 - - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Marking device Case style TO-247AC modified (JEDEC®) K/W HFA16PB120H Revision: 25-Sep-2019 Document Number: 94717 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PB120HN3 Vishay Semiconductors 1000 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = 150 °C 100 TJ = 125 °C 10 1 0.1 0.1 TJ = 25 °C 0.01 0 2 4 6 8 0 200 400 600 800 1000 1200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 1 1 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 1 0.1 Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 25-Sep-2019 Document Number: 94717 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PB120HN3 www.vishay.com Vishay Semiconductors 270 1600 VR = 200 V TJ = 125 °C TJ = 25 °C 220 1200 IF = 16 A IF = 8 A 170 Qrr (nC) trr (ns) VR = 200 V TJ = 125 °C TJ = 25 °C 1400 120 IF = 16 A IF = 8 A 1000 800 600 400 70 200 20 100 0 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 30 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C IRR (A) 20 dI(rec)M/dt (A/µs) 25 1000 IF = 16 A IF = 8 A 15 10 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 IF = 16 A IF = 8 A 100 5 0 100 1000 10 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) Revision: 25-Sep-2019 Document Number: 94717 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PB120HN3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- HF A 16 PB 120 H N3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (16 = 16 A) 5 - PB = TO-247AC modified 6 - Voltage rating: (120 = 1200 V) 7 - H = AEC-Q101 qualified Environmental digit: 8 N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA16PB120HN3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95253 Part marking information www.vishay.com/doc?95442 SPICE model www.vishay.com/doc?95672 Revision: 25-Sep-2019 Document Number: 94717 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC modified DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 A2 S (Datum B) Ø K M DBM Ø P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb A1 (b1, b3, b5) Plating View A - A C 2x e b4 0.10 M C A M (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.530 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c Revision: 11-Dec-2019 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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