VS-HFA16PB120PBF

VS-HFA16PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 16 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr 1 • Designed and qualified JEDEC®-JESD 47 3 according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-247AC 2L Base cathode BENEFITS 2 1 Cathode • • • • • 3 Anode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION VS-HFA16PB120... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the VS-HFA16PB120... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA16PB120... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRIMARY CHARACTERISTICS IF(AV) 16 A VR 1200 V VF at IF 2.3 V trr typ. 30 ns TJ max. 150 °C Package TO-247AC 2L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation Operating junction and storage temperature range TEST CONDITIONS VR PD TJ, TStg VALUES UNITS 1200 V TC = 100 °C 16 tp = 10 ms 190 TC = 25 °C 151 TC = 100 °C 60 A 64 -55 to +150 W °C Revision: 29-Nov-2019 Document Number: 94057 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PB120-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 μA Maximum forward voltage VFM IF = 32 A IF = 16 A See fig. 1 MIN. TYP. MAX. 1200 - - - 2.5 3.0 - 3.2 3.93 UNITS V IF = 16 A, TJ = 125 °C - 2.3 2.7 VR = VR rated - 0.75 20 - 375 2000 - 27 40 pF - 8.0 - nH UNITS Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 30 - trr1 TJ = 25 °C - 90 135 trr2 TJ = 125 °C - 164 245 IRRM1 TJ = 25 °C - 5.8 10 IRRM2 TJ = 125 °C - 8.3 15 IF = 16 A dIF/dt = 200 A/μs VR = 200 V ns A Qrr1 TJ = 25 °C - 260 675 Qrr2 TJ = 125 °C - 680 1838 dI(rec)M/dt1 TJ = 25 °C - 120 - dI(rec)M/dt2 TJ = 125 °C - 76 - MIN. TYP. MAX. UNITS - - 300 °C - - 0.83 nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - 0.50 - - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Marking device Case style TO-247AC 2L K/W HFA16PB120 Revision: 29-Nov-2019 Document Number: 94057 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PB120-N3 Vishay Semiconductors 1000 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = 150 °C 100 TJ = 125 °C 10 1 0.1 0.1 TJ = 25 °C 0.01 0 2 4 6 8 0 200 400 600 800 1000 1200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 1 1 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 1 0.1 Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2019 Document Number: 94057 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PB120-N3 www.vishay.com Vishay Semiconductors 270 1600 VR = 200 V TJ = 125 °C TJ = 25 °C 220 1200 IF = 16 A IF = 8 A 170 Qrr (nC) trr (ns) VR = 200 V TJ = 125 °C TJ = 25 °C 1400 120 IF = 16 A IF = 8 A 1000 800 600 400 70 200 20 100 0 100 1000 dIF/dt (A/µs) diF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 30 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C 20 di(rec)M/dt (A/µs) 25 IRR (A) 1000 IF = 16 A IF = 8 A 15 10 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 IF = 16 A IF = 8 A 100 5 0 100 10 100 1000 1000 diF/dt (A/µs) diF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 29-Nov-2019 Document Number: 94057 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PB120-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 16 PB 120 -N3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (16 = 16 A) 5 - PB = TO-247AC, 2 pins 6 - Voltage rating: (120 = 1200 V) Environmental digit: 7 -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA16PB120-N3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96144 Part marking information www.vishay.com/doc?95648 Revision: 29-Nov-2019 Document Number: 94057 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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