VS-HFA16TA60C-M3

VS-HFA16TA60C-M3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and qualified JEDEC®-JESD 47 1 to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 according 3L TO-220AB BENEFITS Base common cathode 4 • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count 2 Common cathode Anode 1 DESCRIPTION Anode 3 VS-HFA16TA60C... is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A per leg continuous current, the VS-HFA16TA60C... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA16TA60C... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRIMARY CHARACTERISTICS IF(AV) 2x8A VR 600 V VF at IF 1.4 V trr typ. 18 ns TJ max. 150 °C Package 3L TO-220AB Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 100 °C VALUES UNITS 600 V 8 16 60 A 24 TC = 25 °C 36 TC = 100 °C 14 -55 to +150 W °C Revision: 02-Apr-2019 Document Number: 96203 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60C-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 μA Maximum forward voltage VFM IF = 16 A IF = 8 A MIN. TYP. MAX. 600 - - UNITS - 1.4 1.7 - 1.7 2.1 IF = 8 A, TJ = 125 °C - 1.4 1.7 VR = VR rated - 0.3 5.0 - 100 500 - 10 25 pF - 8.0 - nH See fig. 1 Maximum reverse  leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 V μA DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 and fig. 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall recovery current during tb See fig. 8 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 18 - UNITS trr1 TJ = 25 °C - 37 55 trr2 TJ = 125 °C - 55 90 IRRM1 TJ = 25 °C - 3.5 5.0 IRRM2 TJ = 125 °C - 4.5 8.0 Qrr1 TJ = 25 °C - 65 138 Qrr2 TJ = 125 °C - 124 360 dI(rec)M/dt1 TJ = 25 °C - 240 - dI(rec)M/dt2 TJ = 125 °C - 210 - MIN. TYP. MAX. UNITS - - 300 °C - - 3.5 - - 1.75 IF = 8.0 A dIF/dt = 200 A/μs VR = 200 V ns A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case,  single leg conducting Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s RthJC K/W Thermal resistance,  junction to ambient RthJA Typical socket mount - - 80 Thermal resistance,  case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6.0 (5.0) Mounting torque Marking device Case style 3L TO-220AB g HFA16TA60C Revision: 02-Apr-2019 Document Number: 96203 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60C-M3 Vishay Semiconductors 1000 100 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 A 0.001 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 3.2 100 200 400 300 500 600 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) CT - Junction Capacitance (pF) 100 A TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Response 10 1 0.1 Single pulse (thermal response) 0.01 0.00001 0.0001 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 02-Apr-2019 Document Number: 96203 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60C-M3 www.vishay.com 80 Vishay Semiconductors 500 IF = 16 A IF = 8.0 A IF = 4.0 A 400 IF = 16 A IF = 8.0 A IF = 4.0 A Qrr (nC) trr (nS) 60 40 20 VR = 200 V TJ = 125 °C TJ = 25 °C VR = 200 V TJ = 125 °C TJ = 25 °C 300 200 100 0 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 10 000 20 Irr (A) 12 IF = 16 A IF = 8.0 A IF = 4.0 A dI(rec)M/dt (A/µs) 16 8 4 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 16 A IF = 8.0 A IF = 4.0 A 1000 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 100 1000 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt(Per Leg) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 02-Apr-2019 Document Number: 96203 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60C-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 16 TA 60 C -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (16 = 16 A) 4 5 - Package: TA = 3L TO-220AB 4 6 - Voltage rating (60 = 600 V) 7 - Circuit configuration: C = common cathode 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA16TA60C-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 SPICE model www.vishay.com/doc?96596 Revision: 02-Apr-2019 Document Number: 96203 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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