VS-HFA16TB120S-M3

VS-HFA16TB120S-M3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 3 D2PAK (TO-263AB) BENEFITS 2 1 N/C • • • • • 3 Anode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) 16 A VR 1200 V VF at IF 2.3 V trr (typ.) 30 ns TJ max. 150 °C Package D2PAK (TO-263AB) Circuit configuration Single VS-HFA16TB120S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the VS-HFA16TB120S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA16TB120S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Maximum continuous forward current IF TEST CONDITIONS TC = 100 °C MAX. UNITS 1200 V 16 Single pulse forward current IFSM 190 Maximum repetitive forward current IFRM 64 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 25 °C 151 TC = 100 °C 60 -55 to +150 A W °C Revision:16-Dec-2021 Document Number: 96312 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TB120S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Maximum forward voltage VFM TEST CONDITIONS IR = 100 μA IF = 16 A IF = 32 A See fig. 1 MIN. TYP. MAX. 1200 - - - 2.5 3.0 - 3.2 3.93 2.7 UNITS V IF = 16 A, TJ = 125 °C - 2.3 VR = VR rated - 0.75 20 - 375 2000 - 27 40 pF - 8.0 - nH MIN. TYP. MAX. UNITS Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 30 - trr1 TJ = 25 °C - 90 135 trr2 TJ = 125 °C - 164 245 IRRM1 TJ = 25 °C - 5.8 10 IRRM2 TJ = 125 °C - 8.3 15 Reverse recovery charge See fig. 7 Qrr1 TJ = 25 °C - 260 675 Qrr2 TJ = 125 °C - 680 1838 Peak rate of fall of recovery current during tb See fig. 8 dI(rec)M/dt1 TJ = 25 °C - 120 - dI(rec)M/dt2 TJ = 125 °C - 76 - MIN. TYP. MAX. UNITS - - 300 °C - - 0.83 - - 80 - 2.0 - g 0.07 - oz. Reverse recovery time See fig. 5 and 10 Peak recovery current See fig. 6 IF = 16 A dIF/dt = 200 A/μs VR = 200 V ns A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction-to-case RthJC Thermal resistance, junction-to-ambient RthJA TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s K/W Typical socket mount Weight Marking device Case style D2PAK (TO-263AB) HFA16TB120S Revision:16-Dec-2021 Document Number: 96312 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TB120S-M3 Vishay Semiconductors 1000 100 TJ = 150 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.1 0 2 4 6 0 8 200 400 600 800 1000 1200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 1 1 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Response 1 0.1 Single pulse (thermal response) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision:16-Dec-2021 Document Number: 96312 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TB120S-M3 www.vishay.com Vishay Semiconductors 270 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C 220 dI(rec)M/dt (A/μs) trr (ns) IF = 16 A IF = 8 A 170 120 IF = 16 A IF = 8 A 1000 100 VR = 200 V TJ = 125 °C TJ = 25 °C 70 20 100 1000 10 100 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) 30 VR = 200 V TJ = 125 °C TJ = 25 °C 25 Irr (A) 20 IF = 16 A IF = 8 A 15 10 5 0 100 1000 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) 1600 1400 VR = 200 V TJ = 125 °C TJ = 25 °C Qrr (nC) 1200 1000 IF = 16 A IF = 8 A 800 600 400 200 0 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) Revision:16-Dec-2021 Document Number: 96312 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TB120S-M3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- HF A 16 TB 120 S L -M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Process designator: A = electron irradiated 4 - Current rating (16 = 16 A) 5 - Package outline (TB = TO-220, 2 leads) 6 - Voltage rating (120 = 1200 V) 7 - S = D2PAK (TO-263AB) 8 - • None = tube • L = tape and reel (left oriented) • R = tape and reel (right oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free Revision:16-Dec-2021 Document Number: 96312 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TB120S-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-HFA16TB120S-M3 50 Antistatic plastic tube VS-HFA16TB120SR-M3 800 13" diameter reel VS-HFA16TB120SL-M3 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 Revision:16-Dec-2021 Document Number: 96312 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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