VS-HFA180NH40PbF
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Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 180 A
FEATURES
• Very low Qrr and trr
Lug terminal
anode
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Base
cathode
BENEFITS
HALF-PAK (D-67)
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION
PRIMARY CHARACTERISTICS
IF(AV)
HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dIF/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
180 A
VR
400 V
IF(DC) at TC
200 A at 100 °C
Package
HALF-PAK (D-67)
Circuit configuration
Single diode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
TEST CONDITIONS
VR
TC = 25 °C
MAX.
UNITS
400
V
395
Continuous forward current
IF
TC = 100 °C
200
Single pulse forward current
IFSM
Limited by junction temperature
1200
Non-repetitive avalanche energy
EAS
L = 100 μH, duty cycle limited by maximum TJ
1.4
TC = 25 °C
657
TC = 100 °C
263
Maximum power dissipation
Operating junction and storage
temperature range
PD
TJ, TStg
A
mJ
W
-55 to +150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Cathode to anode
breakdown voltage
VBR
Maximum forward voltage
VFM
TEST CONDITIONS
IR = 100 μA
IF = 180 A
IF = 360 A
See fig. 1
IF = 180 A, TJ = 125 °C
Maximum reverse
leakage current
IRM
TJ = 125 °C, VR = 400 V
See fig. 2
Junction capacitance
CT
VR = 200 V
See fig. 3
Series inductance
LS
From top of terminal hole to mounting plane
MIN.
TYP.
MAX.
400
-
-
UNITS
-
1.08
1.46
-
1.22
1.8
-
0.99
1.34
-
-
4
-
370
500
pF
-
6.0
-
nH
V
mA
Revision: 11-Jan-18
Document Number: 94061
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
See fig. 5
trr
Peak recovery current
See fig. 6
IRRM
Reverse recovery charge
See fig. 7
TEST CONDITIONS
TYP.
MAX.
-
90
140
TJ = 125 °C
-
280
440
-
9
16
-
18
32
-
300
950
-
2650
6300
TJ = 25 °C
IF = 135 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 125 °C
TJ = 25 °C
Qrr
Peak rate of recovery current
See fig. 8
MIN.
TJ = 25 °C
TJ = 125 °C
dI(rec)M/dt
TJ = 25 °C
-
300
-
TJ = 125 °C
-
290
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
-55 to +150
°C
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
0.19
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.05
°C/W
Approximate weight
Mounting torque
Terminal torque
g
oz.
minimum
3 (26.5)
maximum
4 (35.4)
minimum
3.4 (30)
maximum
N·m
(lbf · in)
5 (44.2)
Case style
HALF-PAK (D-67)
1000
10
TJ = 150 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
30
1.06
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
1
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001
0.0001
100
200
300
400
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Revision: 11-Jan-18
Document Number: 94061
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
80
60
TJ = 25 °C
1000
40
20
10
1
10
100
0
100
1000
1000
VR - Reverse Voltage (V)
dIF/dt (A/µs)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 6 - Typical Recovery Current vs. dIF/dt
6000
160
140
5000
TJ = 125 °C
TJ = 25 °C
120
4000
100
Qrr (nC)
Maximum Allowable Case Temperature (°C)
IF = 200 A
IF = 180 A
IF = 70 A
50
30
100
DC
80
60
IF = 200 A
IF = 180 A
IF = 70 A
3000
2000
40
1000
20
0
0
100
200
300
400
0
100
500
1000
IF(AV) - DC Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Maximum Allowable Case Temperature vs.
DC Forward Current
Fig. 7 - Typical Stored Charge vs. dIF/dt
10 000
400
TJ = 125 °C
TJ = 25 °C
IF = 200 A
IF = 180 A
IF = 70 A
300
250
200
150
dI(rec)M/dt (A/µs)
350
trr (ns)
TJ = 125 °C
TJ = 25 °C
70
IRRM (A)
CT - Junction Capacitance (pF)
10 000
200 A
180 A
70 A
1000
100
TJ = 125 °C
TJ = 25 °C
50
0
100
1000
100
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 11-Jan-18
Document Number: 94061
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA180NH40PbF
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Vishay Semiconductors
ZthJC - Thermal Response
1
0.1
0.01
Single pulse
(thermal response)
0.001
0.00001
0.0001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.001
0.01
1
0.1
10
t1 - Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 11-Jan-18
Document Number: 94061
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA180NH40PbF
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Vishay Semiconductors
L = 100 µH
IL(PK)
High-speed
switch
D.U.T.
Freewheel
diode
Rg = 25 Ω
Current
monitor
+
Decay
time
Vd = 50 V
V(AVAL)
VR(RATED)
Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
Device code
VS- HFA
1
2
180
N
H
40
PbF
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
HEXFRED® family, electron irradiated
3
-
Average current rating
4
-
N = not isolated
5
-
H = HALF-PAK (D-67)
6
-
Voltage rating (400 V)
7
-
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95020
Revision: 11-Jan-18
Document Number: 94061
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-67 HALF-PAK
DIMENSIONS in millimeters (inches)
24.4 (0.96)
13 (0.51)
17.5 (0.69)
16.5 (0.65)
5 (0.20)
4 (0.16)
30 ± 0.05
(1.2 ± 0.002)
5 (0.196) + 45°
Ø 7.3 ± 0.1 (0.29 ± 0.0039)
21 (0.82)
20 (0.78)
Ø 4.3
(Ø 0.169
- 0.1
0.0
- 0.004
)
0.000
¼" - 20 UNC
40 MAX. (1.58)
Document Number: 95020
Revision: 20-May-09
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