VS-HFA220FA120
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Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 220 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
SOT-227
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
VR
1200 V
VF (typical)
2.68 V
trr (typical)
58 ns
IF(AV) per module at TC
220 A at 38 °C
Package
SOT-227
The dual diode series configuration (VS-HFA220FA120) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
TEST CONDITIONS
VR
MAX.
UNITS
1200
V
Continuous forward current
IF
TC = 68 °C
110
Single pulse forward current
IFSM
TJ = 25 °C
700
TC = 25 °C
500
TC = 100 °C
400
Any terminal to case, t = 1 minute
2500
V
-55 to +150
°C
UNITS
Maximum power dissipation per leg
RMS isolation voltage
Operating junction and storage
temperature range
PD
VISOL
TJ, TStg
A
W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
Reverse leakage current
SYMBOL
VBR
VFM
IRM
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
IF = 100 A
-
2.68
3.60
IF = 200 A
-
3.41
4.70
IF = 100 A, TJ = 150 °C
-
2.62
2.89
IF = 200 A, TJ = 150 °C
-
3.59
3.89
VR = VR rated
-
10
75
TJ = 125 °C, VR = VR rated
-
2
-
TJ = 150 °C, VR = VR rated
-
6
15
IR = 100 μA
V
μA
mA
Revision: 10-Sep-2019
Document Number: 93636
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA220FA120
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1 A; dIF/dt = - 200 A/μs; VR = 30 V
-
58
-
TJ = 25 °C
-
157
-
TJ = 125 °C
-
255
-
-
15
-
-
22.5
-
trr
Peak recovery current
Reverse recovery charge
Qrr
Junction capacitance
CT
IF = 50 A
dIF/dt = - 200 A/μs
VR = 200 V
TJ = 25 °C
IRRM
TJ = 125 °C
UNITS
ns
A
TJ = 25 °C
-
1150
-
TJ = 125 °C
-
2850
-
VR = 1200 V
-
53
-
pF
MIN.
TYP.
MAX.
UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
TEST CONDITIONS
-
-
0.25
-
-
0.125
Flat, greased surface
-
0.10
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.8 (15.9)
Nm (lbf.in)
RthJC
Junction to case, both legs conducting
Case to heatsink
RthCS
Weight
Mounting torque
SOT-227
10
1000
TJ = 150 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Case style
°C/W
TJ = 150 °C
100
TJ = 125 °C
TJ = 25 °C
10
1
TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001
1
0.5
1
1.5
2
2.5
3
3.5
4
0
200
400
600
800
1000
1200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 10-Sep-2019
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA220FA120
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
PDM
0.1
t1
0.75
0.50
0.33
0.25
0.20
DC
0.01
0.0001
0.001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
300
VR = 200 V
150
250
125
IF = 50 A, TJ = 125 °C
200
100
trr (ns)
Allowable Case Temperature (°C)
175
DC
75
IF = 50 A, TJ = 25 °C
150
50
100
Square wave (d = 0.5)
Rated VR applied
25
50
100
0
0
20
40
60
80
100 120 140 160 180
dIF/dt (A/μs)
IF(AV) - Average Forward Current (A)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 4 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
800
4000
700
3500
600
3000
VR = 200 V
IF = 50 A, TJ = 125 °C
2500
500
RMS Limit
400
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
300
200
100
Qrr (ns)
Average Power Loss (W)
1000
2000
IF = 50 A, TJ = 25 °C
1500
1000
500
DC
0
0
0
40
80
120
160
200
IF(AV) - Average Forward Current (A)
Fig. 5 - Forward Power Losses Characteristics (Per Leg)
100
1000
dIF/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Revision: 10-Sep-2019
Document Number: 93636
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA220FA120
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Vishay Semiconductors
1000
50
CT - Junction Capacitance (pF)
VR = 200 V
IRR (A)
40
30
IF = 50 A, TJ = 125 °C
20
10
IF = 50 A, TJ = 25 °C
100
10
0
100
10
1000
100
1000
10 000
dIF/dt (A/μs)
VR - Reverse Voltage (V)
Fig. 8 - Typical Peak Recovery Current vs. dIF/dt
Fig. 9 - Typical Junction Capacitance vs. Reverse Voltage
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(1)
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 10-Sep-2019
Document Number: 93636
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA220FA120
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
HF
A
220
F
A
120
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
HEXFRED® family
3
-
Process designator (A = electron irradiated)
4
-
Average current (220 = 220 A)
5
-
Circuit configuration (two separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (120 = 1200 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
Two separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 10-Sep-2019
Document Number: 93636
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 19-May-2020
Legal Disclaimer Notice
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