VS-HFA25TB60SHM3
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Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Specified at operating conditions
• Meets MSL level 1, per
LF maximum peak of 260 °C
2
3
• AEC-Q101 qualified, meets JESD 201 class 1A
whisker test
1
TO-263AB
J-STD-020,
(D2PAK)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Base
cathode
2
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
1
N/C
• Reduced snubbing
3
Anode
• Reduced parts count
DESCRIPTION
PRODUCT SUMMARY
Package
TO-263AB (D2PAK)
IF(AV)
25 A
VR
600 V
VF at IF
1.3 V
trr (typ.)
23 ns
TJ max.
150 °C
Diode variation
Single die
VS-HFA25TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Maximum continuous forward current
IF
TEST CONDITIONS
TC = 100 °C
VALUES
UNITS
600
V
25
Single pulse forward current
IFSM
225
Maximum repetitive forward current
IFRM
100
Maximum power dissipation
Operating junction and storage temperature range
PD
TJ, TStg
TC = 25 °C
125
TC = 100 °C
50
-55 to +150
A
W
°C
Revision: 15-Jul-15
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
VBR
TEST CONDITIONS
IR = 100 μA
IF = 25 A
Maximum forward voltage
VFM
IF = 50 A
See fig. 1
IF = 25 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
Junction capacitance
CT
VR = 200 V
Series inductance
LS
Measured lead to lead 5 mm from package body
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
See fig. 3
MIN.
TYP.
MAX.
600
-
-
-
1.3
1.7
-
1.5
2.0
-
1.3
1.7
UNITS
V
-
1.5
20
-
600
2000
-
55
100
pF
-
8.0
-
nH
UNITS
μA
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall recovery
current during tb
See fig. 8
SYMBOL
MIN.
TYP.
MAX.
trr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TEST CONDITIONS
-
23
-
trr1
TJ = 25 °C
-
50
-
ns
trr2
TJ = 125 °C
-
105
-
IRRM1
TJ = 25 °C
-
4.5
-
IRRM2
TJ = 125 °C
-
8.0
-
Qrr1
TJ = 25 °C
-
112
-
Qrr2
TJ = 125 °C
-
420
-
dI(rec)M/dt1
TJ = 25 °C
-
250
-
dI(rec)M/dt2
TJ = 125 °C
-
160
-
MIN.
TYP.
MAX.
UNITS
-
-
300
°C
-
-
1.0
-
-
80
-
2.0
-
g
-
0.07
-
oz.
IF = 25 A
dIF/dt = 200 A/μs
VR = 200 V
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Lead temperature
Tlead
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
K/W
Typical socket mount
Weight
Marking device
Case style TO-263AB
(D2PAK)
HFA25TB60SH
Revision: 15-Jul-15
Document Number: 94675
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VS-HFA25TB60SHM3
Vishay Semiconductors
10 000
100
TJ = 150 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
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TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.6
1000
TJ = 125 °C
100
10
1
TJ = 25 °C
0.1
0.01
1.0
1.4
1.8
2.2
0
2.6
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Response
10
1
PDM
Single pulse
(thermal response)
0.01
0.00001
0.0001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
0.001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 15-Jul-15
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VS-HFA25TB60SHM3
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Vishay Semiconductors
140
1400
VR = 200 V
TJ = 125 °C
TJ = 25 °C
120
1200
1000
60
Qrr (nC)
trr (ns)
100
80
IF = 50 A
IF = 25 A
IF = 10 A
IF = 50 A
IF = 25 A
IF = 10 A
800
600
400
40
200
20
100
0
100
1000
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
30
10 000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
dI(rec)M/dt (A/μs)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
25
IF = 50 A
IF = 25 A
IF = 10 A
20
Irr (A)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
15
10
IF = 50 A
IF = 25 A
IF = 10 A
1000
5
0
100
100
100
1000
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 15-Jul-15
Document Number: 94675
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VS-HFA25TB60SHM3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
HF
A
25
TB
60
S
TR
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
HEXFRED® family
3
-
Process designator: A = electron irradiated
4
-
Current rating (25 = 25 A)
5
-
Package outline (TB = TO-220, 2 leads)
6
-
Voltage rating (60 = 600 V)
7
-
S = D2PAK
8
-
9
-
10
-
• None = tube
• TL = tape and reel (left oriented)
• TR = tape and reel (right oriented)
• H = AEC-Q101 qualified
• M3 = halogen-free, RoHS-compliant, and termiantion lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?95032
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-HFA25TB60SHM3
50
1000
Antistatic plastic tube
VS-HFA25TB60STRHM3
800
800
13" diameter reel
VS-HFA25TB60STLHM3
800
800
13" diameter reel
Revision: 15-Jul-15
Document Number: 94675
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
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Revision: 01-Jan-2022
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Document Number: 91000