VS-HFA30TA60CHN3
www.vishay.com
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• AEC-Q101 qualified, meets JESD 201 class 1A
whisker test
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-220AB
BENEFITS
Base
common
cathode
2
•
•
•
•
•
DESCRIPTION
2
Common
cathode
Anode
1
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
VS-HFA30TA60CHN3 is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30TA60CHN3 is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30TA60CHN3 is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
Anode
3
PRODUCT SUMMARY
Package
TO-220AB
IF(AV)
2 x 15 A
VR
600 V
VF at IF
1.2 V
trr typ.
19 ns
TJ max.
150 °C
Diode variation
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Maximum continuous forward current
TEST CONDITIONS
VR
per leg
per device
IF
TC = 100 °C
VALUES
UNITS
600
V
15
30
Single pulse forward current
IFSM
150
Maximum repetitive forward current
IFRM
60
Maximum power dissipation
Operating junction and storage temperature range
PD
TJ, TStg
TC = 25 °C
74
TC = 100 °C
29
-55 to +150
A
W
°C
Revision: 15-Jul-15
Document Number: 94511
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA30TA60CHN3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
VBR
TEST CONDITIONS
IR = 100 μA
IF = 15 A
Maximum forward voltage
VFM
IF = 30 A
See fig. 1
IF = 15 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
Junction capacitance
CT
VR = 200 V
Series inductance
LS
Measured lead to lead 5 mm from package body
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
See fig. 3
MIN.
TYP.
MAX.
600
-
-
-
1.3
1.7
-
1.5
2.0
-
1.2
1.6
UNITS
V
-
1.0
10
-
400
1000
-
25
50
pF
-
8
-
nH
μA
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5 and 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during tb
See fig. 8
SYMBOL
MIN.
TYP.
MAX.
trr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TEST CONDITIONS
-
19
-
trr1
TJ = 25 °C
-
42
60
trr2
TJ = 125 °C
-
70
120
IRRM1
TJ = 25 °C
-
4.0
6.0
-
6.5
10
-
80
180
-
220
600
IF = 15 A
dIF/dt = 200 A/μs
VR = 200 V
UNITS
ns
A
IRRM2
TJ = 125 °C
Qrr1
TJ = 25 °C
Qrr2
TJ = 125 °C
dI(rec)M/dt1
TJ = 25 °C
-
250
-
dI(rec)M/dt2
TJ = 125 °C
-
160
-
MIN.
TYP.
MAX.
UNITS
-
-
300
°C
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conducting
Junction to case,
both legs conducting
SYMBOL
Tlead
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
1.7
RthJC
-
-
0.85
K/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.25
-
-
6.0
-
g
-
0.21
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Weight
Mounting torque
Marking device
Case style TO-220AB
HFA30TA60CH
Revision: 15-Jul-15
Document Number: 94511
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA30TA60CHN3
Vishay Semiconductors
100
10 000
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
1.0
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 150 °C
1000
TJ = 125 °C
100
10
1
TJ = 25 °C
0.1
0.01
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
100
VFM - Forward Voltage Drop (V)
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward
Current (Per Leg)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
ZthJC - Thermal Response
10
1
PDM
0.1
Single pulse
(thermal response)
0.01
0.00001
0.0001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 15-Jul-15
Document Number: 94511
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA30TA60CHN3
www.vishay.com
Vishay Semiconductors
100
800
IF = 30 A
IF = 15 A
IF = 5.0 A
80
VR = 200 V
TJ = 125 °C
TJ = 25 °C
60
Qrr (nC)
trr (ns)
600
40
200
0
100
0
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
25
10 000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
15
VR = 200 V
TJ = 125 °C
TJ = 25 °C
dI(rec)M/dt (A/µs)
20
IRR (A)
400
VR = 200 V
TJ = 125 °C
TJ = 25 °C
20
IF = 30 A
IF = 15 A
IF = 5 A
IF = 30 A
IF = 15 A
IF = 5 A
10
IF = 30 A
IF = 15 A
IF = 5 A
1000
5
0
100
100
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 15-Jul-15
Document Number: 94511
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA30TA60CHN3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
HF
A
30
TA
60
C
H
N3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
HEXFRED® family
3
-
Electron irradiated
4
-
Current rating (30 = 30 A)
4
5
4
6
-
Package:
TA = TO-220AB
Voltage rating (60 = 600 V)
7
-
Circuit configuration:
C = common cathode
8
-
H = AEC-Q101 qualified
9
-
Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
-
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-HFA30TA60CHN3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95222
TO-220AB-N3
www.vishay.com/doc?95028
Revision: 15-Jul-15
Document Number: 94511
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
(b, b2)
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AB
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
A1
1.14
1.40
0.045
0.055
NOTES
SYMBOL
MILLIMETERS
INCHES
NOTES
MIN.
MAX.
MIN.
MAX.
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
A2
2.56
2.92
0.101
0.115
E1
6.86
8.89
0.270
0.350
6
b
0.69
1.01
0.027
0.040
E2
-
0.76
-
0.030
7
b1
0.38
0.97
0.015
0.038
4
e
2.41
2.67
0.095
0.105
b2
1.20
1.73
0.047
0.068
e1
4.88
5.28
0.192
0.208
b3
1.14
1.73
0.045
0.068
4
H1
5.84
6.86
0.230
0.270
c
0.36
0.61
0.014
0.024
L
13.52
14.02
0.532
0.552
c1
0.36
0.56
0.014
0.022
4
L1
3.32
3.82
0.131
0.150
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
D1
8.38
9.02
0.330
0.355
Q
2.60
3.00
0.102
0.118
6, 7
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package
outline
Revision: 06-Mar-2020
Document Number: 95222
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000
