VS-HFA70EA120

VS-HFA70EA120 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 70 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Antiparallel diodes • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • Designed and qualified for industrial level SOT-227 • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS VR 1200 V VF (typical) 2.2 V trr (typical) 48 ns IF(DC) at TC, per module 70 A at 121 °C Package SOT-227 This SOT-227 modules with HEXFRED® rectifier are in antiparallel configuration. The antiparallel configuration is used for simple series rectifier and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built.  These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Continuous forward current, per leg IF Single pulse forward current IFSM Maximum power dissipation, per leg PD RMS isolation voltage VISOL Operating junction and storage  temperature range TEST CONDITIONS MAX. UNITS 1200 V TC = 121 °C 35 TJ = 25 °C 350 A TC = 25 °C 357 TC = 100 °C 143 Any terminal to case, t = 1 minute 2500 V -55 to +150 °C TJ, TStg W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode  breakdown voltage Forward voltage, per leg Reverse leakage current, per leg SYMBOL VBR VFM IRM TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 30 A - 2.2 3.0 IF = 60 A - 2.8 4.0 IF = 30 A, TJ = 125 °C - 2.13 - IF = 60 A, TJ = 125 °C - 2.70 - IF = 30 A, TJ = 150 °C - 2.04 - IF = 60 A, TJ = 150 °C - 2.65 - IR = 100 μA VR = VR rated - 2.0 75 TJ = 125 °C, VR = VR rated - 1.6 5 TJ = 150 °C, VR = VR rated - 5 10 UNITS V μA mA Revision: 05-Jan-18 Document Number: 94747 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA70EA120 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time, per leg trr Peak recovery current, per leg IRRM Reverse recovery charge, per leg Qrr Junction capacitance, per leg CT TEST CONDITIONS MIN. TYP. MAX. IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V - 48 - TJ = 25 °C - 145 - TJ = 125 °C - 218 - TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 50 A dIF/dt = - 200 A/μs VR = 200 V - 13 - - 19 - UNITS ns A - 910 - TJ = 125 °C - 1920 - VR = 1200 V - 27 - pF MIN. TYP. MAX. UNITS - - 0.35 - - 0.175 - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting TEST CONDITIONS RthJC Junction to case, both legs conducting Case to heatsink RthCS Flat, greased surface Weight Mounting torque SOT-227 10 000 1000 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Case style °C/W 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.5 1000 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 200 400 600 800 1000 1200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 05-Jan-18 Document Number: 94747 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA70EA120 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (°C/W) 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC DC 0.01 0.0001 PDM 0.001 0.1 0.01 10 1 t1 - Rectangular Pulse Duration (s) 300 175 IF = 50 A VR = 200 V 150 250 125 TJ = 125 °C 100 trr (ns) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics DC 75 Square wave (D = 0.50) 80 % rated VR applied 50 150 TJ = 25 °C 100 25 0 0 20 40 60 80 100 50 100 120 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 200 3000 2500 IF = 50 A VR = 200 V 150 2000 RMS limit Qrr (nC) Average Power Loss (W) 200 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 50 1000 TJ = 25 °C 500 DC 0 0 20 TJ = 125 °C 1500 40 60 80 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);  PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 05-Jan-18 Document Number: 94747 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA70EA120 www.vishay.com Vishay Semiconductors 40 IF = 50 A VR = 200 V TJ = 125 °C Irr (A) 30 20 TJ = 25 °C 10 0 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Peak Recovery Current vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 05-Jan-18 Document Number: 94747 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA70EA120 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 70 E A 120 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Process designator (A = electron irradiated) 4 - Average current (70 = 70 A) 5 - Circuit configuration (two separate diodes, antiparallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (120 = 1200 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 4 Two separate diodes, antiparallel pin-out 3 4 3 1 2 E 1 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Part marking information www.vishay.com/doc?95425 Revision: 05-Jan-18 Document Number: 94747 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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