VS-HFA70FA120
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Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 70 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
SOT-227
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
VR
The dual diode series configuration (VS-HFA70FA120) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
1200 V
VF (typical)
2.3 V
trr (typical)
51 ns
IF(AV) per module at TC
70 A at 94 °C
Package
SOT-227
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current per leg
IF
Single pulse forward current per leg
IFSM
Maximum power dissipation per module
RMS isolation voltage
PD
VISOL
Operating junction and storage
temperature range
TEST CONDITIONS
MAX.
UNITS
1200
V
TC = 110 °C
35
TJ = 25 °C
380
A
TC = 110 °C
174
W
Any terminal to case, t = 1 min
2500
V
-55 to +150
°C
TJ, TStg
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
Forward voltage
Reverse leakage current
SYMBOL
VBR
VFM
IRM
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
IF = 30 A
-
2.30
3.00
IF = 60 A
-
2.89
3.80
IF = 30 A, TJ = 125 °C
-
2.14
2.44
IF = 60 A, TJ = 125 °C
-
2.82
3.27
VR = VR rated
-
1.2
75
TJ = 125 °C, VR = VR rated
-
1.0
-
TJ = 150 °C, VR = VR rated
-
2.7
10
IR = 100 μA
UNITS
V
μA
mA
Revision: 05-Jan-18
Document Number: 94289
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70FA120
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
Qrr
Junction capacitance
CT
MIN.
TYP.
MAX.
-
51
-
TJ = 25 °C
-
134
-
TJ = 125 °C
-
204
-
-
12
-
-
18
-
TJ = 25 °C
IRRM
Reverse recovery charge
TEST CONDITIONS
IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V
TJ = 125 °C
IF = 50 A
dIF/dt = - 200 A/μs
VR = 200 V
UNITS
ns
A
TJ = 25 °C
-
790
-
TJ = 125 °C
-
1770
-
VR = 1200 V
-
24
-
pF
MIN.
TYP.
MAX.
UNITS
-
-
0.46
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
TEST CONDITIONS
RthJC
Junction to case, both legs conducting
Case to heatsink
RthCS
Flat, greased surface
Weight
Mounting torque
-
-
0.23
-
0.10
-
-
30
-
g
Nm (lbf.in)
Torque to terminal
-
-
1.1 (9.7)
Torque to heatsink
-
-
1.8 (15.9) Nm (lbf.in)
Case style
SOT-227
1000
10 000
TJ = 150 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
°C/W
TJ = 150 °C
100
TJ = 125 °C
TJ = 25 °C
10
1
1000
TJ = 125 °C
100
10
1
TJ = 25 °C
0.1
0.01
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
200
400
600
800
1000
1200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 05-Jan-18
Document Number: 94289
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70FA120
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Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
100
10
10
100
1000
10 000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
0.01
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
0.001
0.0001
0.001
0.01
0.1
1
.
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
200
150
Average Power Loss (W)
Allowable Case Temperature (°C)
175
125
100
DC
75
Square wave (d = 0.5)
80 % rated VR applied
50
25
150
RMS Limit
100
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
50
DC
0
0
0
10
20
30
40
50
60
70
80
90
IF - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature
vs. Average Forward Current (Per Leg)
0
10
20
30
40
50
60
70
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Losses Characteristics (Per Leg)
Revision: 05-Jan-18
Document Number: 94289
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70FA120
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Vishay Semiconductors
250
3000
VR = 200 V
IF = 50 A
200
VR = 200 V
IF = 50 A
IF = 30 A
2500
IF = 30 A
125 °C
2000
100
Qrr (nC)
trr (ns)
150
25 °C
125 °C
1500
1000
50
25 °C
500
0
0
100
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
35
VR = 200 V
30
IF = 30 A
IF = 50 A
Irr (nC)
25
20
125 °C
15
10
25 °C
5
0
100
1000
dIF/dt (A/μs)
Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
Revision: 05-Jan-18
Document Number: 94289
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70FA120
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
HF
A
70
F
A
120
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
HEXFRED® family
3
-
Process designator (A = electron irradiated)
4
-
Current rating (70 = 70 A)
5
-
Circuit configuration (two separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (120 = 1200 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
Two separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 05-Jan-18
Document Number: 94289
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 19-May-2020
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Document Number: 91000
