VS-HFA90NH40PBF

VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 210 A FEATURES • Very low Qrr and trr Lug terminal anode • Designed and qualified for industrial level • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base cathode HALF-PAK (D-67) BENEFITS • Reduced RFI and EMI • Reduced snubbing PRIMARY CHARACTERISTICS IF (maximum) 210 A DESCRIPTION VR 400 V IF(DC) at TC 106 A at 100 °C Package HALF-PAK (D-67) Circuit configuration Single diode HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dIF/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VALUES UNITS 400 V VR TC = 25 °C 210 Continuous forward current IF TC = 100 °C 106 Single pulse forward current IFSM Limited by junction temperature 600 Non-repetitive avalanche energy EAS L = 100 μH, duty cycle limited by maximum TJ 1.4 TC = 25 °C 329 TC = 100 °C 132 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg A mJ W -55 to +150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 μA Maximum forward voltage VFM IF = 180 A Maximum reverse leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 Junction capacitance CT VR = 200 V See fig. 3 Series inductance LS From top of terminal hole to mounting plane IF = 90 A See fig. 1 IF = 90 A, TJ = 125 °C MIN. TYP. MAX. 400 - - UNITS - 1.06 1.45 - 1.2 1.67 - 0.96 1.23 - 0.6 2 - 180 260 pF - 7.0 - nH V mA Revision: 11-Jan-18 Document Number: 94044 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time See fig. 5 trr Peak recovery current See fig. 6 IRRM Reverse recovery charge See fig. 7 TEST CONDITIONS TYP. MAX. - 90 140 TJ = 125 °C - 158 240 - 9 17 - 15 30 - 420 1100 - 1200 3200 TJ = 25 °C IF = 90 A dIF/dt = 200 A/μs VR = 200 V TJ = 125 °C TJ = 25 °C Qrr Peak rate of recovery current See fig. 8 MIN. TJ = 25 °C TJ = 125 °C dI(rec)M/dt TJ = 25 °C - 370 - TJ = 125 °C - 270 - UNITS ns A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TEST CONDITIONS TJ, TStg VALUES UNITS -55 to 150 °C Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 0.38 Typical thermal resistance,  case to heatsink RthCS Mounting surface, flat, smooth, and greased 0.05 °C/W Approximate weight minimum Mounting torque Terminal torque Non-lubricated threads 3 (26.5) 4 (35.4) minimum 3.4 (30) maximum N m (lbf in) 5 (44.2) HALF-PAK (D-67) 10 000 1000 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) g oz. maximum Case style 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1000 TJ = 125 °C 100 10 1 0.1 0.01 TJ = 25 °C 0.001 0.0001 1 94044_01 30 1.06 0.0 0.5 1.0 1.5 2.0 2.5 100 3.0 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 94044_02 200 300 400 VR - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage Revision: 11-Jan-18 Document Number: 94044 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors 100 200 A, 125 °C 90 A, 125 °C 40 A, 125 °C TJ = 25 °C Irrm (A) CT - Junction Capacitance (pF) 10 000 1000 100 10 1 100 1 100 1000 VR - Reverse Voltage (V) 94044_03 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt 160 4500 140 4000 3500 120 3000 Qrr (nC) 100 DC 80 60 2500 2000 200 A, 125 °C 90 A, 125 °C 40 A, 125 °C 200 A, 25 °C 90 A, 25 °C 40 A, 25 °C 1500 40 1000 20 500 0 0 94044_04 50 100 150 200 0 100 250 IF (AV) - DC Forward Current (A) 1000 dIF/dt (A/µs) 94044_07 Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current Fig. 7 - Typical Stored Charge vs. dIF/dt 240 10 000 160 dI(rec)M/dt (A/µs) 200 A, 125 °C 90 A, 125 °C 40 A, 125 °C 200 A, 25 °C 90 A, 25 °C 40 A, 25 °C 200 trr (ns) 1000 94044_06 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Maximum Allowable Case Temperature (°C) 200 A, 25 °C 90 A, 25 °C 40 A, 25 °C 10 120 1000 200 A, 125 °C 90 A, 125 °C 40 A, 125 °C 200 A, 25 °C 90 A, 25 °C 40 A, 25 °C 80 40 100 94044_05 1000 dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 100 100 94044_08 1000 dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt Revision: 11-Jan-18 Document Number: 94044 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors ZthJC - Thermal Response 1 0.1 0.01 0.001 0.00001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse (thermal response) 0.0001 0.001 0.01 1 0.1 10 t1 - Rectangular Pulse Duration (s) 94044_09 Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 11-Jan-18 Document Number: 94044 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors L = 100 µH IL(PK) High-speed switch D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Decay time Vd = 50 V V(AVAL) VR(RATED) Fig. 12 - Avalanche Test Circuit and Waveforms ORDERING INFORMATION TABLE Device code VS- HFA 90 N H 40 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Average current rating 4 - N = not isolated 5 - H = HALF-PAK (D-67) 6 - Voltage rating (400 V) 7 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision: 11-Jan-18 Document Number: 94044 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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