VS-KBPC8005PBF

VS-KBPC8 Series www.vishay.com Vishay Semiconductors Single Phase Rectifier Bridge, 8 A FEATURES • Suitable for printed circuit board or chassis mounting • Compact construction • High surge current capability • Fully characterized data • Wide temperature range • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D-72 DESCRIPTION PRIMARY CHARACTERISTICS IO 8.0 A VRRM 50 V to 1000 V Package D-72 Circuit configuration Single phase bridge The VS-KBPC series of single phase rectifier bridge consists of four silicon junctions connected as a full bridge. These device are intended for general use in industrial and consumer equipment.  MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS Resistive load IO IFSM I2t VRRM VALUES UNITS 8 Capacitive load A 6.4 TC 50 50 Hz 125 60 Hz 137 50 Hz 110 60 Hz 100 Range TJ °C A A2s 50 to 1000 V -55 to +150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-KBPC8005 50 80 VS-KBPC801 100 150 VS-KBPC802 200 300 VS-KBPC804 400 500 VS-KBPC806 600 700 VS-KBPC808 800 900 VS-KBPC810 1000 1100 Revision: 18-May-2018 Document Number: 93586 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-KBPC8 Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum DC output current IO Maximum peak one cycle,  non-repetitive surge current TEST CONDITIONS VALUES TC = 50 °C, resistive or inductive load IFSM TC = 50 °C, capacitive load 6.4 t = 10 ms, 20 ms 125 t = 8.3 ms, 16.7 ms UNITS 8.0 Following any rated load condition and with rated VRRM reapplied t = 10 ms A 137 78 t = 8.3 ms Initial TJ = TJ maximum 100 % VRRM reapplied 71 Maximum I2t capability for fusing I2t t = 8.3 ms 1000 Maximum I2t capability for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1105 Maximum peak forward voltage per diode VFM IFM = 3.0 A, TJ = 25 °C 1.0 V TJ = 25 °C, 100 % VRRM 10 μA Typical peak reverse leakage per diode t = 10 ms IRM Operating frequency range Maximum repetitive peak reverse  voltage range TJ = 150 °C, 100 % VRRM A2s 110 A2s 1.0 mA f 400 to 1000 Hz VRRM 50 to 1000 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating and storage temperature range Thermal resistance, junction to case SYMBOL VALUES TJ, TStg -55 to +150 °C RthJC 6 K/W Approximate weight 9 Maximum Peak Surge Current (A) Average Output Current (A) 10 KBPC8... 8 7 Resistive load 6 5 4 Capacitive load 3 2 1 0 0 20 40 60 80 100 120 140 160 UNITS 6 g 0.21 oz. 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 KBPC8 50 Hz 0.01 0.1 1.0 Maximum Allowable Ambient Temperature (°C) Pulse Train Duration (s) Fig. 1 - Current Ratings Fig. 2 - Non-Repetitive Surge Ratings 10 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95250 Revision: 18-May-2018 Document Number: 93586 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-72 DIMENSIONS in millimeters (inches): KBPC6, KBPC8 15.75 (0.620) 14.75 (0.580) Ø 3.80 (Ø 0.150) 5.33 (0.210) 4.33 (0.170) ~ + 15.75 (0.620) 14.75 (0.580) 10.8 (0.425) 10.0 (0.394) ~ 25.4 (1.000) MIN. 10.8 (0.425) 10.0 (0.394) Ø 1.10 (Ø 0.043) Ø 0.90 (Ø 0.035) DIMENSIONS in millimeters (inches): KBPC1 15.7 (0.62) 16.7 (0.66) Ø 3.8 (Ø 0.15) Ø 4.2 (Ø 0.16) 5.5 (0.22) 6.5 (0.26) + ~ 15.7 (0.62) 16.7 (0.66) 10 (0.39) 11 (0.43) ~ 22 (0.87) MIN. 10 (0.39) 11 (0.43) Ø 0.7 (Ø 0.028) Ø 0.9 (Ø 0.035) Revision: 20-Jan-16 Document Number: 95250 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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