VS-KBPC804PBF

VS-KBPC8 Series www.vishay.com Vishay Semiconductors Single Phase Rectifier Bridge, 8 A FEATURES • Suitable for printed circuit board or chasis mounting • Compact construction • High surge current capability • Fully characterized data • Wide temperature range • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D-72 DESCRIPTION PRIMARY CHARACTERISTICS IO 8.0 A VRRM 50 V to 1000 V Package D-72 Circuit configuration Single phase bridge The VS-KBPC series of single phase rectifier bridge consists of four silicon junctions connected as a full bridge. These device are intended for general use in industrial and consumer equipment.   MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS Resistive load IO IFSM I2t VRRM VALUES UNITS 8 A Capacitive load 6.4 TC 50 50 Hz 125 60 Hz 137 50 Hz 110 60 Hz 100 Range 50 to 1000 V -55 to 150 °C TJ °C A A2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-KBPC8005 50 80 VS-KBPC801 100 150 VS-KBPC802 200 300 VS-KBPC804 400 500 VS-KBPC806 600 700 VS-KBPC808 800 900 VS-KBPC810 1000 1100 PART NUMBER Revision: 17-Aug-17 Document Number: 93586 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-KBPC8 Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum DC output current IO Maximum peak one cycle,  non-repetitive surge current TEST CONDITIONS VALUES TC = 50 °C, resistive or inductive load IFSM TC = 50 °C, capacitive load 6.4 t = 10 ms, 20 ms 125 t = 8.3 ms, 16.7 ms UNITS 8.0 Following any rated load condition and with rated VRRM reapllied t = 10 ms A 137 78 t = 8.3 ms Initial TJ = TJ maximum 100 % VRRM reapplied 71 Maximum I2t capability for fusing I2t t = 8.3 ms 1000 Maximum I2t capability for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1105 A2s Maximum peak forward voltage per diode VFM IFM = 3.0 A, TJ = 25 °C 1.0 V TJ = 25 °C, 100 % VRRM 10 TJ = 150 °C, 100 % VRRM 100 Typical peak reverse leakage per diode t = 10 ms IRM Operating frequency range Maximum repetitive peak reverse  voltage range A2s 110 mA f 400 to 1000 Hz VRRM 50 to 1000 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating and storage temperature range Thermal resistance, junction to case SYMBOL VALUES TJ, TStg -55 to 150 °C RthJC 6 K/W Approximate weight 9 Maximum Peak Surge Current (A) Average Output Current (A) 10 KBPC8... 8 7 Resistive load 6 5 4 Capacitive load 3 2 1 0 0 20 40 60 80 100 120 140 160 UNITS 6 g 0.21 oz. 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 KBPC8 50 Hz 0.01 0.1 1.0 Maximum Allowable Ambient Temperature (°C) Pulse Train Duration (s) Fig. 1 - Current Ratings Fig. 2 - Non-Repetitive Surge Ratings 10 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95250 Revision: 17-Aug-17 Document Number: 93586 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-72 DIMENSIONS in millimeters (inches): KBPC6, KBPC8 15.75 (0.620) 14.75 (0.580) Ø 3.80 (Ø 0.150) 5.33 (0.210) 4.33 (0.170) ~ + 15.75 (0.620) 14.75 (0.580) 10.8 (0.425) 10.0 (0.394) ~ 25.4 (1.000) MIN. 10.8 (0.425) 10.0 (0.394) Ø 1.10 (Ø 0.043) Ø 0.90 (Ø 0.035) DIMENSIONS in millimeters (inches): KBPC1 15.7 (0.62) 16.7 (0.66) Ø 3.8 (Ø 0.15) Ø 4.2 (Ø 0.16) 5.5 (0.22) 6.5 (0.26) + ~ 15.7 (0.62) 16.7 (0.66) 10 (0.39) 11 (0.43) ~ 22 (0.87) MIN. 10 (0.39) 11 (0.43) Ø 0.7 (Ø 0.028) Ø 0.9 (Ø 0.035) Revision: 20-Jan-16 Document Number: 95250 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000