VS-MBR1535CT-M3

VS-MBR1535CT-M3, VS-MBR1545CT-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 7.5 A FEATURES Base 2 common cathode • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 1 2 Anode 3 3L TO-220AB Anode 2 1 Common 3 cathode PRIMARY CHARACTERISTICS IF(AV) 2 x 7.5 A VR 35 V, 45 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION VF at IF 0.57 V IRM max. 15 mA at 125 °C TJ max. 150 °C EAS 7 mJ Package 3L TO-220AB Circuit configuration Common cathode The VS-MBR15...CT... center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM VALUES UNITS 15 A 35/45 V IFSM tp = 5 μs sine 690 A VF 7.5 Apk, TJ = 125 °C 0.57 V TJ Range -65 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-MBR1535CT-M3 VS-MBR1545CT-M3 UNITS 35 45 V ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current per leg per device Maximum peak one cycle non-repetitive surge Non-repetitive avalanche energy per leg Repetitive avalanche current per leg IF(AV) TEST CONDITIONS UNITS 7.5 TC = 131 °C, rated VR 5 µs sine or 3 µs rect. pulse IFSM VALUES 15 Following any rated load condition and with rated VRRM applied Surge applied at rated load condition half wave  single phase 60 Hz 690 A 150 EAS TJ = 25 °C, IAS = 2 A, L = 3.5 mH 7 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A Revision: 18-Aug-17 Document Number: 96281 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1535CT-M3, VS-MBR1545CT-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TJ = 25 °C 15 A VFM (1) Maximum forward voltage drop 7.5 A TJ = 125 °C 15 A Maximum instantaneous reverse current IRM (1) TJ = 25 °C Rated DC voltage TJ = 125 °C VALUES UNITS 0.84 V 0.57 0.72 0.1 15 mA Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 400 pF Typical series inductance LS Measured from top of terminal to mounting plane 8.0 nH 10 000 V/µs VALUES UNITS Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ - 65 to 150 Maximum storage temperature range TStg - 65 to 175 Maximum thermal resistance,  junction to case per leg RthJC DC operation 3.0 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.50 Maximum thermal resistance, junction to ambient RthJA DC operation Marking device °C/W 60 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque °C Case style 3L TO-220AB MBR1535CT MBR1545CT Revision: 18-Aug-17 Document Number: 96281 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1535CT-M3, VS-MBR1545CT-M3 Vishay Semiconductors 100 100 10 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 20 30 50 40 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 0.1 0.01 0.001 0.00001 0.0001 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 18-Aug-17 Document Number: 96281 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1535CT-M3, VS-MBR1545CT-M3 www.vishay.com Vishay Semiconductors 7 Average Power Loss (W) Allowable Case Temperature (°C) 150 140 DC Square wave (D = 0.50) Rated VR applied 130 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 6 5 4 RMS limit 3 DC 2 1 See note (1) 0 120 0 2 4 6 8 10 2 0 12 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 18-Aug-17 Document Number: 96281 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1535CT-M3, VS-MBR1545CT-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 15 45 CT -M3 3 4 5 6 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - Current rating (15 = 15 A) 4 - Voltage ratings 5 - CT = essential part number 6 - Environmental digit 35 = 35 V 45 = 45 V -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-MBR1535CT-M3 50 1000 Antistatic plastic tube VS-MBR1545CT-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 SPICE model www.vishay.com/doc?95294 Revision: 18-Aug-17 Document Number: 96281 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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