VS-MBR1635-M3, VS-MBR1645-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 16 A
FEATURES
Base
cathode
2
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
1
Cathode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
3
Anode
2L TO-220AC
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC®-JESD 47
PRIMARY CHARACTERISTICS
IF(AV)
16 A
VR
35 V, 45 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VF at IF
0.57 V
IRM max.
40 mA at 125 °C
TJ max.
150 °C
EAS
24 mJ
Package
2L TO-220AC
Circuit configuration
Single
DESCRIPTION
The VS-MBR16... Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
Rectangular waveform
VRRM
VALUES
UNITS
16
A
35, 45
V
IFSM
tp = 5 μs sine
1800
A
VF
16 Apk, TJ = 125 °C
0.57
V
TJ
Range
-65 to +150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-MBR1635-M3
VS-MBR1645-M3
UNITS
35
45
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
IF(AV)
TEST CONDITIONS
TC = 134 °C, rated VR
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
Non-repetitive avalanche energy
Repetitive avalanche current
IFSM
Following any rated load
condition and with rated
VRRM applied
VALUES
UNITS
16
A
1800
A
Surge applied at rated load condition half wave
single phase, 60 Hz
150
EAS
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
24
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3.6
A
Revision: 23-Nov-17
Document Number: 96267
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR1635-M3, VS-MBR1645-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous reverse current
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
TEST CONDITIONS
16 A
TJ = 25 °C
TJ = 125 °C
0.63
TJ = 125 °C
0.57
Rated DC voltage
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
LS
Measured from top of terminal to mounting plane
dV/dt
VALUES
TJ = 25 °C
Rated VR
UNITS
V
0.2
mA
40
1400
pF
8.0
nH
10 000
V/µs
VALUES
UNITS
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
-65 to +150
Maximum storage temperature range
TStg
-65 to +175
Maximum thermal resistance,
junction to case
RthJC
DC operation
1.50
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
°C/W
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
Marking device
°C
Case style 2L TO-220AC (JEDEC)
MBR1635
MBR1645
Revision: 23-Nov-17
Document Number: 96267
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR1635-M3, VS-MBR1645-M3
Vishay Semiconductors
100
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
TJ = 150 °C
10
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1.0
0
1.2
5
10
15
20
25
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
0
10
20
30
50
40
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
0.01
0.001
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.0001
0.001
0.01
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 23-Nov-17
Document Number: 96267
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR1635-M3, VS-MBR1645-M3
www.vishay.com
Vishay Semiconductors
15
150
Average Power Loss (W)
Allowable Case Temperature (°C)
155
145
140
DC
Square wave (D = 0.50)
Rated VR applied
135
130
125
10
RMS limit
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
5
DC
See note (1)
120
0
0
5
10
15
20
25
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR applied
Revision: 23-Nov-17
Document Number: 96267
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR1635-M3, VS-MBR1645-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
16
45
-M3
3
4
5
1
-
Vishay Semiconductors product
2
-
Schottky MBR series
3
-
Current rating (16 = 16 A)
4
-
Voltage ratings
5
-
Environmental digit
35 = 35 V
45 = 45 V
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-MBR1635-M3
50
1000
Antistatic plastic tube
VS-MBR1645-M3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96156
Part marking information
www.vishay.com/doc?95391
Revision: 23-Nov-17
Document Number: 96267
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
1
Document Number: 91000