VS-MBR1645-M3

VS-MBR1635-M3, VS-MBR1645-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 16 A FEATURES Base cathode 2 • 150 °C TJ operation • Low forward voltage drop • High frequency operation 1 Cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 Anode 2L TO-220AC • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS IF(AV) 16 A VR 35 V, 45 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VF at IF 0.57 V IRM max. 40 mA at 125 °C TJ max. 150 °C EAS 24 mJ Package 2L TO-220AC Circuit configuration Single DESCRIPTION The VS-MBR16... Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM VALUES UNITS 16 A 35, 45 V IFSM tp = 5 μs sine 1800 A VF 16 Apk, TJ = 125 °C 0.57 V TJ Range -65 to +150 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBR1635-M3 VS-MBR1645-M3 UNITS 35 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL IF(AV) TEST CONDITIONS TC = 134 °C, rated VR 5 µs sine or 3 µs rect. pulse Non-repetitive peak surge current Non-repetitive avalanche energy Repetitive avalanche current IFSM Following any rated load condition and with rated VRRM applied VALUES UNITS 16 A 1800 A Surge applied at rated load condition half wave single phase, 60 Hz 150 EAS TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH 24 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3.6 A Revision: 23-Nov-17 Document Number: 96267 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1635-M3, VS-MBR1645-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM (1) Maximum instantaneous reverse current IRM (1) Maximum junction capacitance Typical series inductance Maximum voltage rate of change TEST CONDITIONS 16 A TJ = 25 °C TJ = 125 °C 0.63 TJ = 125 °C 0.57 Rated DC voltage CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C LS Measured from top of terminal to mounting plane dV/dt VALUES TJ = 25 °C Rated VR UNITS V 0.2 mA 40 1400 pF 8.0 nH 10 000 V/µs VALUES UNITS Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ -65 to +150 Maximum storage temperature range TStg -65 to +175 Maximum thermal resistance,  junction to case RthJC DC operation 1.50 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.50 °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque Marking device °C Case style 2L TO-220AC (JEDEC) MBR1635 MBR1645 Revision: 23-Nov-17 Document Number: 96267 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1635-M3, VS-MBR1645-M3 Vishay Semiconductors 100 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = 150 °C 10 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0 0.2 0.4 0.6 0.8 1.0 0 1.2 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 °C 100 0 10 20 30 50 40 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 0.01 0.001 0.00001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 23-Nov-17 Document Number: 96267 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1635-M3, VS-MBR1645-M3 www.vishay.com Vishay Semiconductors 15 150 Average Power Loss (W) Allowable Case Temperature (°C) 155 145 140 DC Square wave (D = 0.50) Rated VR applied 135 130 125 10 RMS limit D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 5 DC See note (1) 120 0 0 5 10 15 20 25 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR applied Revision: 23-Nov-17 Document Number: 96267 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1635-M3, VS-MBR1645-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 16 45 -M3 3 4 5 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - Current rating (16 = 16 A) 4 - Voltage ratings 5 - Environmental digit 35 = 35 V 45 = 45 V -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-MBR1635-M3 50 1000 Antistatic plastic tube VS-MBR1645-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 23-Nov-17 Document Number: 96267 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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