VS-MBR2035CTHN3

VS-MBR20...CTHN3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A FEATURES Base 2 common cathode • 150 °C TJ operation • Low forward voltage drop • High frequency operation Anode TO-220AB • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Anode 2 1 Common 3 cathode • Guard ring for enhanced ruggedness and long term reliability PRODUCT SUMMARY • AEC-Q101 qualified meets JESD 201 class 2 whisker test IF(AV) 2 x 10 A VR 35 V, 45 V VF at IF 0.57 V IRM max. 15 mA at 125 °C TJ max. 150 °C EAS 8 mJ • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Package TO-220AB Diode variation Common cathode DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 20 A 35/45 V Rectangular waveform (per device) VRRM IFRM TC = 135 °C (per leg) IFSM tp = 5 μs sine VF 10 Apk, TJ = 125 °C TJ Range 20 A 1060 0.57 V -65 to 150 °C VS-MBR2035CTHN3 VS-MBR2045CTHN3 UNITS 35 45 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average  forward current SYMBOL per leg per device Peak repetitive forward current per leg TEST CONDITIONS TC = 135 °C, rated VR IFRM Rated VR, square wave, 20 kHz, TC = 135 °C IFSM UNITS 10 IF(AV) 5 μs sine or 3 μs rect. pulse Non-repetitive peak surge current VALUES 20 Following any rated load condition and with rated VRRM applied Surge applied at rated load condition half wave,  single phase, 60 Hz 20 1060 A 150 Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ Revision: 05-Mar-14 Document Number: 94960 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR20...CTHN3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 20 A Maximum forward voltage drop VFM (1) TJ = 25 °C 10 A TJ = 125 °C 20 A Maximum instantaneous reverse current IRM (1) Threshold voltage VF(TO) Forward slope resistance rt Maximum junction capacitance CT Typical series inductance LS Maximum voltage rate of change dV/dt TJ = 25 °C Rated DC voltage TJ = 125 °C TJ = TJ maximum VALUES UNITS 0.84 0.57 V 0.72 0.1 15 mA 0.354 V 17.6 m VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 600 pF Measured from top of terminal to mounting plane 8.0 nH 10 000 V/μs VALUES UNITS Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ -65 to 150 Maximum storage temperature range TStg -65 to 175 Maximum thermal resistance,  junction to case per leg RthJC DC operation 2.0 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased (only for TO-220) 0.50 Approximate weight Mounting torque Marking device minimum maximum Non-lubricated threads Case style TO-220AB °C °C/W 2 g 0.07 oz. 6 (5) kgf · cm (lbf·in) 12 (10) MBR2035CTH MBR2045CTH Revision: 05-Mar-14 Document Number: 94960 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR20...CTHN3 Series Vishay Semiconductors 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.2 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 05-Mar-14 Document Number: 94960 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR20...CTHN3 Series www.vishay.com Vishay Semiconductors 10 145 Average Power Loss (W) Allowable Case Temperature (°C) 150 140 DC 135 Square wave (D = 0.50) Rated VR applied 130 125 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 8 6 RMS limit 4 DC 2 See note (1) 0 120 0 3 6 9 12 2 0 15 4 6 8 10 12 14 16 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 05-Mar-14 Document Number: 94960 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR20...CTHN3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 20 45 CT H N3 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - Current rating (20 = 20 A) 4 - Voltage ratings 5 - CT = Essential part number 6 - H = AEC-Q101 qualified 7 - Environmental digit 35 = 35 V 45 = 45 V N3 = Halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-MBR2035CTHN3 50 1000 Antistatic plastic tube VS-MBR2045CTHN3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com/doc?95222 TO-220AB-N3 www.vishay.com/doc?95028 www.vishay.com/doc?95295 Revision: 05-Mar-14 Document Number: 94960 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L (b, b2) Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 A1 1.14 1.40 0.045 0.055 NOTES SYMBOL MILLIMETERS INCHES NOTES MIN. MAX. MIN. MAX. D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 A2 2.56 2.92 0.101 0.115 E1 6.86 8.89 0.270 0.350 6 b 0.69 1.01 0.027 0.040 E2 - 0.76 - 0.030 7 b1 0.38 0.97 0.015 0.038 4 e 2.41 2.67 0.095 0.105 b2 1.20 1.73 0.047 0.068 e1 4.88 5.28 0.192 0.208 b3 1.14 1.73 0.045 0.068 4 H1 5.84 6.86 0.230 0.270 c 0.36 0.61 0.014 0.024 L 13.52 14.02 0.532 0.552 c1 0.36 0.56 0.014 0.022 4 L1 3.32 3.82 0.131 0.150 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118 6, 7 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC® TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Revision: 06-Mar-2020 Document Number: 95222 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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