VS-MBR3045CT-M3

VS-MBR3045CT-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES Base 2 common cathode Anode 3L TO-220AB • • • • Anode 2 1 Common 3 cathode PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VR 45 V VF at IF See Electrical table IRM max. 100 mA at 125 °C TJ max. 150 °C EAS 10 mJ Package 3L TO-220AB Circuit configuration Common cathode 150 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform (per device) VRRM IFRM TC = 123 °C (per leg) IFSM tp = 5 μs sine VF 20 Apk, TJ = 125 °C TJ Range VALUES UNITS 30 A 35/45 V 30 A 1020 0.6 V -65 to +150 °C VOLTAGE RATINGS SYMBOL PARAMETER VS-MBR3045CT-M3 UNITS 45 V VR Maximum DC reverse voltage Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current per leg per device Peak repetitive forward current per leg TEST CONDITIONS Non-repetitive peak surge current TC = 123 °C, rated VR IFRM Rated VR, square wave, 20 kHz, TC = 123 °C Non-repetitive avalanche energy per leg Repetitive avalanche current per leg IFSM UNITS 15 IF(AV) 5 µs sine or 3 µs rect. pulse VALUES 30 Following any rated load condition and with rated  VRRM applied 30 A 1020 Surge applied at rated load conditions halfwave,  single phase, 60 Hz 200 EAS TJ = 25 °C, IAS = 2 A, L = 5 mH 10 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A Revision: 15-Aug-17 Document Number: 96257 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR3045CT-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TJ = 25 °C 30 A VFM (1) Maximum forward voltage drop 20 A TJ = 125 °C 30 A Maximum instantaneous reverse current IRM (1) Threshold voltage VF(TO) TJ = 25 °C Rated DC voltage TJ = 125 °C TJ = TJ maximum VALUES UNITS 0.76 V 0.6 0.72 1 100 mA 0.29 V 13.6 m Forward slope resistance rt Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 800 pF Typical series inductance LS Measured from top of terminal to mounting plane 8.0 nH 10 000 V/µs VALUES UNITS Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ -65 to +150 Maximum storage temperature range TStg -65 to +175 Maximum thermal resistance,  junction to case per leg RthJC DC operation 1.5 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased Only for TO-220 0.50 Maximum thermal resistance,  junction to ambient RthJA DC operation For D2PAK and TO-262 Approximate weight Mounting torque Marking device minimum maximum Non-lubricated threads Case style 3L TO-220AB °C °C/W 50 2 g 0.07 oz. 6 (5) kgf · cm (lbf · in) 12 (10) MBR3045CT Revision: 15-Aug-17 Document Number: 96257 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR3045CT-M3 Vishay Semiconductors 100 1000 10 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 150 °C 100 10 TJ = 100 °C TJ = 125 °C 1 TJ = 75 °C TJ = 50 °C 0.1 0.01 TJ = 25 °C 1 0.001 0 0.3 0.6 0.9 0 1.5 1.2 10 20 30 40 50 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 15-Aug-17 Document Number: 96257 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR3045CT-M3 www.vishay.com Vishay Semiconductors 15 140 Average Power Loss (W) Allowable Case Temperature (°C) 150 DC 130 Square wave (D = 0.50) Rated VR applied 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 12 9 RMS limit 6 DC 3 See note (1) 0 100 0 5 10 15 5 0 25 20 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 15-Aug-17 Document Number: 96257 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR3045CT-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 30 45 CT -M3 3 4 5 6 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - Current rating (30 = 30 A) 4 - Voltage ratings (045 = 45 V) 5 - CT = essential part number 6 - Environmental digit -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-MBR3045CT-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 Revision: 15-Aug-17 Document Number: 96257 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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