VS-MBR4045CT-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
Base 2
common
cathode
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
Anode
3L TO-220AB
Anode
2
1 Common 3
cathode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC®-JESD 47
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VR
45 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VF at IF
0.58 V
IRM max.
95 mA at 125 °C
TJ max.
150 °C
EAS
20 mJ
Package
3L TO-220AB
Circuit configuration
Common cathode
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
Rectangular waveform (per device)
VRRM
VALUES
UNITS
40
A
45
V
IFRM
TC = 118 °C (per leg)
40
IFSM
tp = 5 μs sine
900
VF
20 Apk, TJ = 125 °C
0.58
V
TJ
Range
-65 to +150
°C
A
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VS-MBR4045CT-M3
UNITS
45
V
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum average forward
current
per leg
per device
Peak repetitive forward current per leg
TEST CONDITIONS
VALUES
UNITS
20
IF(AV)
TC = 118 °C, rated VR
IFRM
Rated VR, square wave, 20 kHz, TC = 118 °C
40
5 µs sine or 3 µs rect. pulse
900
40
Following any rated
load condition and with
rated VRRM applied
A
Maximum peak one cycle non-repetitive
surge current per leg
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 3 A, L = 4.40 mH
20
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3
A
Repetitive avalanche current per leg
10 ms sine or 6 ms rect. pulse
210
Revision: 15-Aug-17
Document Number: 96258
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ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
20 A
VFM (1)
Maximum forward voltage drop
TJ = 25 °C
40 A
20 A
TJ = 125 °C
40 A
TJ = 25 °C
Maximum instantaneus reverse current
IRM
(1)
VALUES
UNITS
0.60
0.78
0.58
V
0.75
1
TJ = 100 °C
Rated DC voltage
50
TJ = 125 °C
95
mA
Maximum junction capacitance
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
900
pF
Typical series inductance
LS
Measured from top of terminal to mounting plane
8.0
nH
10 000
V/µs
VALUES
UNITS
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
-65 to +150
Maximum storage temperature range
TStg
-65 to +175
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
1.5
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
(Only for TO-220)
0.50
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
(For D2PAK and TO-262)
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style 3L TO-220AB
°C
°C/W
50
2
g
0.07
oz.
6 (5)
kgf · cm
(lbf · in)
12 (10)
MBR4045CT
Revision: 15-Aug-17
Document Number: 96258
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR4045CT-M3
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
TJ = 50 °C
0.1
TJ = 25 °C
0.01
1
0.001
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
5
10
20
15
25
30
35
40
45
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
CT - Junction Capacitance (pF)
900
800
700
600
500
TJ = 25 °C
400
300
200
10
0
30
20
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
0.01
0.001
0.00001
Single pulse
(thermal resistance)
0.0001
PDM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
0.001
0.01
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 15-Aug-17
Document Number: 96258
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20
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
18
140
Average Power Loss (W)
Allowable Case Temperature (°C)
160
DC
120
Square wave (D = 0.50)
Rated VR applied
100
16
14
12
RMS limit
10
DC
8
6
4
2
See note (1)
80
0
0
5
10
15
20
25
30
0
IF(AV) - Average Forward Current (A)
10
15
20
25
30
35
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current
IFSM - Non-Repetitive Surge Current (A)
5
Fig. 6 - Forward Power Loss Characteristics
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 15-Aug-17
Document Number: 96258
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR4045CT-M3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
40
45
CT
-M3
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Schottky MBR series
3
-
Current rating (40 = 40 A)
4
-
Voltage rating (45 = 45 V)
5
-
CT = essential part number
6
-
Environmental digit
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-MBR4045CT-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96154
Part marking information
www.vishay.com/doc?95028
SPICE model
www.vishay.com/doc?95296
Revision: 15-Aug-17
Document Number: 96258
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Outline Dimensions
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Vishay Semiconductors
3L TO-220AB
DIMENSIONS in millimeters and inches
A
0.014 M B A M
(6)
E
A
ØP
Q
B
A
(6)
(E)
A1
Thermal pad
1
D
(H1)
H1
C
D2
(6) D
2 3
D
L1 (2)
C
(6)
c
3xb
D1
3 x b2
Detail B
Detail B
A2
L
E1 (6)
C
(b, b2)
Base metal
A
c1 (4)
c
2x e
Plating
View A - A
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AB
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.50
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.35
8.38
9.02
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.098
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.604
0.330
0.355
NOTES
4
4
4
3
SYMBOL
D2
E
E1
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN.
MAX.
11.68
13.30
10.11
10.51
6.86
8.89
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.91
2.60
3.00
INCHES
MIN.
MAX.
0.460
0.524
0.398
0.414
0.270
0.350
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.154
0.102
0.118
NOTES
6, 7
3, 6
6
6
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2
Revision: 13-Jun-2019
Document Number: 96154
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