VS-MBRA140-M3/5AT

VS-MBRA140-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability • Small foot print, surface mountable • High frequency operation DO-214AC (SMA) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package DO-214AC (SMA) IF(AV) 1A DESCRIPTION VR 40 V VF at IF 0.49 V The VS-MBRA140-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. IRM 26 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 3.0 mJ  MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS Rectangular waveform 1 A 40 V 120 A VRRM IFSM tp = 5 μs sine VF 1.5 Apk, TJ = 125 °C TJ Range 0.56 V -55 to +150 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBRA140-M3 UNITS 40 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 4 SYMBOL IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TL = 123 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1.5 50 % duty cycle at TL = 132 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1 Following any rated load condition and with rated VRRM applied UNITS A Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Repetitive avalanche current 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse 120 A 30 Revision: 10-Jun-16 Document Number: 95883 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRA140-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 1.5 A 1A TJ = 125 °C 1.5 A Maximum reverse leakage current See fig. 2 Threshold voltage IRM VF(TO) Forward slope resistance rt Typical junction capacitance CT Typical series inductance Maximum voltage rate of change LS dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = TJ maximum VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.54 0.62 V 0.49 0.56 0.5 mA 26 0.36 V 104 m 38 pF 2.0 nH 10 000 V/μs VALUES UNITS -55 to +150 °C 80 °C/W Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and  storage temperature range TJ (1), TStg Maximum thermal resistance,  junction to ambient RthJA TEST CONDITIONS DC operation Approximate weight Marking device Case style SMA (similar D-64) 0.07 g 0.002 oz. 1F Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 10-Jun-16 Document Number: 95883 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRA140-M3 www.vishay.com Vishay Semiconductors 1 0.1 0.2 IR - Reverse Current (mA) Allowable Case Temperature (°C) TJ = 150 °C TJ = 125 °C TJ = 25 °C 150 140 DC 130 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 110 100 90 Square wave (D = 0.50) 80 % rated VR applied 80 See note (1) 70 0.4 0.6 1.0 0.8 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.4 2.0 VFM - Forward Voltage Drop (V) IF(AV) - Average Forward Current (A) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature 100 1.4 10 1.2 Average Power Loss (W) IF - Instantaneous Forward Current (A) 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.0 RMS limit 0.8 DC 0.6 0.4 0.2 0 0.0001 5 10 15 20 25 30 35 40 0.4 0.8 1.2 1.6 2.0 2.4 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 0 5 10 15 20 25 30 35 40 IFSM - Non-Repetitive Surge Current (A) 0 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 VR - Reverse Voltage (V) tp - Square Wave Pulse Duration (µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 10-Jun-16 Document Number: 95883 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRA140-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 A 1 40 -M3 3 4 5 6 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - A = SMA 4 - Current rating (1 = 1A) 5 - Voltage rating (040 = 40 V) 6 - Environmental digit: -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-MBRA140-M3/5AT PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5AT 7500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95400 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?96008 Revision: 10-Jun-16 Document Number: 95883 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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