VS-MBRA140TRPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 1 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
SMA (DO-214AC)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D 3D
3D Models
DESCRIPTION
PRIMARY CHARACTERISTICS
IF(AV)
1A
VR
40 V
VF at IF
0.49 V
IRM
26 mA at 125 °C
TJ max.
150 °C
EAS
3.0 mJ
Package
SMA (DO-214AC)
Circuit configuration
Single
The VS-MBRA140TRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
VALUES
UNITS
1
A
40
V
A
IFSM
tp = 5 μs sine
120
VF
1.5 Apk, TJ = 125 °C
0.56
V
TJ
Range
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VS-MBRA140TRPBF
UNITS
40
V
VR
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
50 % duty cycle at TL = 123 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
1.5
50 % duty cycle at TL = 132 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
1
UNITS
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle non-repetitive
surge current, see fig. 6
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1 A, L = 6 mH
3.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
A
Repetitive avalanche current
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
A
120
30
A
Revision: 19-Nov-2019
Document Number: 94301
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRA140TRPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
1.5 A
1A
TJ = 125 °C
1.5 A
Maximum reverse leakage current
See fig. 2
Threshold voltage
IRM
VF(TO)
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TJ = TJ maximum
VALUES
UNITS
0.54
0.62
V
0.49
0.56
0.5
mA
26
0.36
V
104
mΩ
Forward slope resistance
rt
Typical junction capacitance
CT
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
38
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
2.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +150
°C
80
°C/W
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
DC operation
Approximate weight
Marking device
Case style SMA (DO-214AC)
0.07
g
0.002
oz.
1F
Note
(1)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Revision: 19-Nov-2019
Document Number: 94301
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRA140TRPbF
www.vishay.com
Vishay Semiconductors
1
0.1
0.2
IR - Reverse Current (mA)
Allowable Case Temperature (°C)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
150
140
DC
130
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
110
100
90
Square wave (D = 0.50)
80 % rated VR applied
80
See note (1)
70
0.4
0.6
1.0
0.8
1.2
1.4
1.6
0
0.4
0.8
1.2
1.6
2.4
2.0
VFM - Forward Voltage Drop (V)
IF(AV) - Average Forward Current (A)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
100
1.4
10
1.2
Average Power Loss (W)
IF - Instantaneous Forward
Current (A)
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1.0
RMS limit
0.8
DC
0.6
0.4
0.2
0
0.0001
0
5
10
15
20
25
30
35
40
0
0.4
0.8
1.2
1.6
2.0
2.4
IF(AV) - Average Forward Current (A)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
0
5
10
15
20
25
30
35
40
IFSM - Non-Repetitive Surge Current (A)
VR - Reverse Voltage (V)
100
At any rated load condition and
with rated VRRM applied
following surge
10
10
100
1000
10 000
VR - Reverse Voltage (V)
tp - Square Wave Pulse Duration (µs)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 19-Nov-2019
Document Number: 94301
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRA140TRPbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
A
1
40
TR
PbF
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Schottky MBR series
3
-
A = SMA
4
-
Current rating (1 = 1A)
5
-
Voltage rating (40 = 40 V)
6
TR = tape and reel (7500 pcs)
7
PbF = terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
PREFERRED PACKAGE CODE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
5AT
7500
13" diameter plastic tape and reel
VS-MBRA140TRPbF
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95400
Part marking information
www.vishay.com/doc?95403
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?96008
Revision: 19-Nov-2019
Document Number: 94301
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Vishay
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2022
1
Document Number: 91000
