VS-MBRB1035TRLHM3

VS-MBRB1035HM3, VS-MBRB1045HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base cathode 2 • 150 °C TJ operation • TO-220 and D2PAK packages • Low forward voltage drop • High frequency operation D2PAK (TO-263AB) • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 Anode 1 N/C • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C PRODUCT SUMMARY IF(AV) 10 A VR 35 V, 45 V VF at IF 0.57 V IRM 15 mA at 125 °C TJ max. 150 °C EAS Package • Designed and qualified according to JEDEC®-JESD 47 • AEC-Q101 qualified • Meets JESD 201 class 1 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 8 mJ D2PAK Diode variation DESCRIPTION (TO-263AB) This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IF(AV) Rectangular waveform 10 IFRM TC = 135 °C 20 VRRM UNITS A 35/45 V IFSM tp = 5 μs sine 1060 A VF 10 Apk, TJ = 125 °C 0.57 V TJ Range -55 to +150 C° VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBRB1035HM3 VS-MBRB1045HM3 UNITS 35 45 V Revision: 07-Jul-17 Document Number: 96115 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1035HM3, VS-MBRB1045HM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 135 °C, rated VR 10 Peak repetitive forward current IFRM Rated VR, square wave, 20 kHz, TC = 135 °C 20 5 μs sine or 3 μs rect. pulse Non-repetitive surge current IFSM Following any rated load condition and with rated VRRM applied UNITS A 1060 Surge applied at rated load conditions half wave, single phase, 60 Hz 150 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 20 A Maximum forward voltage drop VFM (1) TJ = 25 °C 10 A TJ = 125 °C 20 A Maximum instantaneous reverse current IRM (1) Threshold voltage VF(TO) Forward slope resistance rt Maximum junction capacitance CT Typical series inductance LS Maximum voltage rate of change dV/dt TJ = 25 °C Rated DC voltage TJ = 125 °C TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured from top of terminal to mounting plane Rated VR VALUES UNITS 0.84 V 0.57 0.72 0.1 15 mA 0.354 V 17.6 mΩ 600 pF 8.0 nH 10 000 V/μs VALUES UNITS Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ -55 to 150 Maximum storage temperature range TStg -55 to 175 Maximum thermal resistance, junction to case RthJC DC operation 2.0 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased (Only for TO-220) 0.50 Approximate weight Mounting torque Marking device °C °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Case style D2PAK (TO-263AB) MBRB1035H MBRB1045H Revision: 07-Jul-17 Document Number: 96115 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1035HM3, VS-MBRB1045HM3 www.vishay.com Vishay Semiconductors 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.2 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 75 °C TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0.4 0.6 0.8 1.0 1.4 1.2 1.6 0 1.8 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 07-Jul-17 Document Number: 96115 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1035HM3, VS-MBRB1045HM3 Vishay Semiconductors 10 150 145 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 140 135 Square wave (D = 0.50) Rated VR applied 130 125 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 8 RMS limit 6 4 DC 2 See note (1) 0 120 0 3 6 9 12 0 15 1 2 3 4 5 6 7 8 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 07-Jul-17 Document Number: 96115 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1035HM3, VS-MBRB1045HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 B 10 45 TRL H M3 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Essential part number 3 - B = surface mount 4 - Current rating (10 = 10 A) 5 - Voltage ratings 6 - 35 = 35 V 45 = 45 V None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 7 - H = AEC-Q101 qulaified 8 - M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-MBRB1035HM3 50 1000 Antistatic plastic tubes VS-MBRB1035TRRHM3 800 800 13" diameter reel VS-MBRB1035TRLHM3 800 800 13" diameter reel VS-MBRB1045HM3 50 1000 Antistatic plastic tubes VS-MBRB1045TRRHM3 800 800 13" diameter reel VS-MBRB1045TRLHM3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?95032 SPICE model www.vishay.com/doc?95293 Revision: 07-Jul-17 Document Number: 96115 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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