VS-MBRB1645-M3

VS-MBRB1635-M3, VS-MBRB1645-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 16 A FEATURES Base cathode 2 • • • • 150 °C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Designed and qualified according to JEDEC®-JESD 47 2 1 3 Anode 1 3 N/C D2PAK (TO-263AB) PRIMARY CHARACTERISTICS IF(AV) 16 A VR 35 V, 45 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VF at IF 0.57 V IRM 40 mA at 125 °C TJ max. 150 °C EAS 24 mJ Package D2PAK (TO-263AB) Circuit configuration Single DESCRIPTION This VS-MBRB16... Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 16 A Rectangular waveform VRRM IFSM tp = 5 μs sine VF 16 Apk, TJ = 125 °C TJ 35/45 V 1800 A 0.57 V -65 to +150 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBRB1635-M3 VS-MBRB1645-M3 UNITS 35 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL IF(AV) TEST CONDITIONS TC = 134 °C, rated VR 5 μs sine or 3 μs rect. pulse Non-repetitive peak surge current Non-repetitive avalanche energy Repetitive avalanche current IFSM VALUES UNITS 16 Following any rated load condition and with rated VRRM applied 1800 A Surge applied at rated load condition half wave single phase 60 Hz 150 EAS TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH 24 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3.6 A Revision: 21-Dec-2021 Document Number: 96394 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1635-M3, VS-MBRB1645-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM (1) Maximum instantaneous reverse current IRM (1) TEST CONDITIONS 16 A TJ = 25 °C TJ = 125 °C VALUES TJ = 25 °C 0.63 TJ = 125 °C 0.57 Rated DC voltage 0.2 40 UNITS V mA Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1400 pF Typical series inductance LS Measured lead from top of terminal to mounting plane 8.0 nH 10 000 V/μs VALUES UNITS Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ -65 to 150 Maximum storage temperature range TStg -65 to 175 Maximum thermal resistance, junction to case RthJC DC operation 1.50 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque Marking device °C Case style D2PAK (TO-263AB) MBRB1635 MBRB1645 Revision: 21-Dec-2021 Document Number: 96394 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1635-M3, VS-MBRB1645-M3 www.vishay.com Vishay Semiconductors 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 150 °C 10 TJ = 125 °C 1.0 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 t1 0.01 0.001 0.00001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 21-Dec-2021 Document Number: 96394 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1635-M3, VS-MBRB1645-M3 www.vishay.com Vishay Semiconductors 15 RMS limit 150 Average Power Loss (W) Allowable Case Temperature (°C) 155 145 DC 140 135 130 Square wave (D = 0.50) Rated VR applied 125 10 DC D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 5 See note (1) 0 120 0 5 10 15 20 0 25 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR applied Revision: 21-Dec-2021 Document Number: 96394 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB1635-M3, VS-MBRB1645-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 B 16 45 3 4 5 1 - 2 - Essential part number 3 - B = surface mount 4 - Current rating (16 = 16 A) 5 - Voltage code = VRRM 6 - TRL -M3 6 7 Vishay Semiconductors product None = tube 35 = 35 V 45 = 45 V TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 7 -- -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N BASE QUANTITY VS-MBRB1635-M3 50 PACKAGING DESCRIPTION Antistatic plastic tubes VS-MBRB1635TRL-M3 800 13" diameter plastic tape and reel VS-MBRB1635TRR-M3 800 13" diameter plastic tape and reel VS-MBRB1645-M3 50 Antistatic plastic tubes VS-MBRB1645TRL-M3 800 13" diameter plastic tape and reel VS-MBRB1645TRR-M3 800 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 SPICE model www.vishay.com/doc?95407 Revision: 21-Dec-2021 Document Number: 96394 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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