VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
2
• Center tap D2PAK (TO-263 AB) and TO-262AA
packages
1
1
3
D2PAK (TO-263AB)
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
TO-262AA
3
Base
common
cathode
2
Base
common
cathode
2
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VS-MBRB20..CT-M3
VS-MBR20..CT-1-M3
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VR
80 V, 90 V, 100 V
VF at IF
0.70 V
IRM max.
6 mA at 125 °C
TJ max.
150 °C
EAS
7 mJ
Package
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
IF(AV)
Rectangular waveform (per device)
20
IFRM
TC = 133 °C (per leg)
20
VRRM
IFSM
tp = 5 μs sine
VF
10 Apk, TJ = 125 °C
TJ
Range
UNITS
A
80 to 100
V
850
A
0.70
V
-65 to +150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-MBRB2080CT-M3 VS-MBRB2090CT-M3 VS-MBRB20100CT-M3
VS-MBR2080CT-1-M3 VS-MBR2090CT-1-M3 VS-MBR20100CT-1-M3
80
90
100
UNITS
V
Revision: 03-Nov-17
Document Number: 96404
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
per leg
Maximum average
forward current
per device
TEST CONDITIONS
VALUES
IF(AV)
TC = 133 °C, rated VR
IFRM
Rated VR, square wave, 20 kHz, TC = 133 °C
20
5 μs sine or
3 μs rect. pulse
850
Peak repetitive forward current per leg
Non-repetitive peak surge current
IFSM
UNITS
10
20
Following any rated load condition
and with rated VRRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
A
Peak repetitive reverse surge current
IRRM
2.0 μs, 1.0 kHz
0.5
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 2 A, L = 12 mH
24
mJ
VALUES
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
10 A
Maximum forward voltage drop
VFM (1)
TJ = 25 °C
20 A
10 A
TJ = 125 °C
20 A
Maximum instantaneous
reverse current
IRM (1)
Threshold voltage
VF(TO)
TJ = 25 °C
Rated DC voltage
TJ = 125 °C
TJ = TJ maximum
0.80
0.95
0.70
V
0.85
0.10
6
mA
0.433
V
15.8
m
Forward slope resistance
rt
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
400
pF
Typical series inductance
LS
Measured from top of terminal to mounting plane
8.0
nH
10 000
V/μs
VALUES
UNITS
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
-65 to 150
Maximum storage temperature range
TStg
-65 to 175
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
2.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Approximate weight
Mounting torque
minimum
maximum
Non-lubricated threads
°C
°C/W
50
2
g
0.07
oz.
6 (5)
kgf · cm
(lbf · in)
12 (10)
Case style D2PAK (TO-263AB)
MBRB2080CT
MBRB2090CT
MBRB20100CT
Case style TO-262AA
MBR2080CT-1
MBR2090CT-1
MBR20100CT-1
Marking device
Revision: 03-Nov-17
Document Number: 96404
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3
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Vishay Semiconductors
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.2
IR - Reverse Current (mA)
IF - Instantaneous
Forward Current (A)
100
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 75 °C
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.0001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage
(Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
20
40
60
80
100
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
t1
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
t2
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.001
0.01
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 03-Nov-17
Document Number: 96404
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3
Vishay Semiconductors
10
150
140
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
DC
130
Square wave (D = 0.50)
Rated VR applied
120
110
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
8
RMS limit
6
4
DC
2
See note (1)
100
0
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 03-Nov-17
Document Number: 96404
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
B
20
100
CT
-1
L
-M3
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Essential part number
3
-
B = D2PAK (TO-263AB)
7
None
None = TO-262AA
7
= -1
4
-
Current rating (20 = 20 A)
5
-
Voltage ratings
6
-
CT = essential part number
7
-
8
-
80 = 80 V
90 = 90 V
100 = 100 V
None = D2PAK (TO-263AB) 3
=B
-1 = TO-262AA
None
3
None = tube (50 pieces)
L = tape and reel (left oriented - for D2PAK (TO-263AB) only)
R = tape and reel (right oriented - for D2PAK (TO-263AB) only)
9
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-MBRB2080CT-M3
50
1000
Antistatic plastic tubes
VS-MBRB2080CTR-M3
800
800
13" diameter reel
VS-MBRB2080CTL-M3
800
800
13" diameter reel
VS-MBR2080CT-1-M3
50
1000
Antistatic plastic tubes
VS-MBRB2090CT-M3
50
1000
Antistatic plastic tubes
VS-MBRB2090CTR-M3
800
800
13" diameter reel
VS-MBRB2090CTL-M3
800
800
13" diameter reel
VS-MBR2090CT-1-M3
50
1000
Antistatic plastic tubes
VS-MBRB20100CT-M3
50
1000
Antistatic plastic tubes
13" diameter reel
VS-MBRB20100CTR-M3
800
800
VS-MBRB20100CTL-M3
800
800
13" diameter reel
VS-MBR20100CT-1-M3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
D2PAK (TO-263AB)
www.vishay.com/doc?96164
Dimensions
TO-262AA
www.vishay.com/doc?96165
Part marking information
D2PAK (TO-263AB)
www.vishay.com/doc?95444
Part marking information
TO-262AA
www.vishay.com/doc?95443
Packaging information
www.vishay.com/doc?96424
Revision: 03-Nov-17
Document Number: 96404
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-262AA
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
NOTES
4
4
4
D
8.51
9.65
0.335
0.380
2
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
2.54 BSC
0.100 BSC
L
13.46
14.10
0.530
0.555
L1
-
1.65
-
0.065
L2
3.56
3.71
0.140
0.146
3
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC® TO-262 except A1 (max.), b (min., max.), b1 (min.), b2 (max.), c (min.), c1(min.), c2 (max.), D (min.), E (max.),
L1 (max.), L2 (min., max.)
Revision: 30-Nov-17
Document Number: 96165
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 01-Jan-2019
1
Document Number: 91000