VS-MBRB2090CTRHM3

VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A TO-263AB (D2PAK) FEATURES TO-262AA • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Center tap D2PAK and TO-262 packages Base common cathode 2 Base common cathode 2 • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode VS-MBRB20...CTHM3 VS-MBR20 ...CT-1HM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 1 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-263AB (D2PAK), TO-262AA IF(AV) 2 x 10 A VR 80 V, 100 V VF at IF 0.70 V IRM 6 mA at 125 °C DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.  TJ max. 150 °C Diode variation Common cathode EAS 24 mJ MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IF(AV) Rectangular waveform (per device) 20 IFRM TC = 133 °C (per leg) 20 VRRM IFSM tp = 5 μs sine VF 10 Apk, TJ = 125 °C TJ Range UNITS A 80 to 100 V 850 A 0.70 V -55 to +150 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBRB2080CTHM3 VS-MBRB2090CTHM3 VS-MBRB20100CTHM3 UNITS VS-MBR2080CT-1HM3 VS-MBR2090CT-1HM3 VS-MBR20100CT-1HM3 80 90 100 V Revision: 03-Mar-15 Document Number: 95859 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL per leg per device Peak repetitive forward current per leg Non-repetitive peak surge current TEST CONDITIONS VALUES 10 IF(AV) TC = 133 °C, rated VR IFRM Rated VR, square wave, 20 kHz, TC = 133 °C 20 5 μs sine or 3 μs rect. pulse 850 IFSM UNITS 20 Following any rated load condition and with rated VRRM applied Surge applied at rated load conditions half wave,  single phase, 60 Hz 150 A Peak repetitive reverse surge current IRRM 2.0 μs, 1.0 kHz 0.5 Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 12 mH 24 mJ VALUES UNITS ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 10 A Maximum forward voltage drop VFM (1) TJ = 25 °C 20 A 10 A TJ = 125 °C 20 A Maximum instantaneous reverse current IRM (1) Threshold voltage VF(TO) TJ = 25 °C Rated DC voltage TJ = 125 °C TJ = TJ maximum 0.80 0.95 0.70 V 0.85 0.10 6 mA 0.433 V 15.8 m Forward slope resistance rt Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 400 pF Typical series inductance LS Measured from top of terminal to mounting plane 8.0 nH 10 000 V/μs VALUES UNITS Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ -55 to +150 Maximum storage temperature range TStg -65 to +150 Maximum thermal resistance,  junction to case per leg RthJC DC operation 2.0 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.50 Maximum thermal resistance,  junction to ambient RthJA DC operation Approximate weight Mounting torque minimum maximum Non-lubricated threads °C °C/W 50 2 g 0.07 oz. 6 (5) kgf · cm (lbf · in) 12 (10) MBRB2090CTH Case style D2PAK MBRB2080CTH MBRB20100CTH Marking device MBR2090CT-1H Case style TO-262 MBR2080CT-1H MBR20100CT-1H Revision: 03-Mar-15 Document Number: 95859 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3 www.vishay.com Vishay Semiconductors 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.2 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 100 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 75 °C TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 20 40 60 80 100 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 PDM t1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t2 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.001 0.01 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 03-Mar-15 Document Number: 95859 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3 Vishay Semiconductors 10 150 140 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 130 Square wave (D = 0.50) Rated VR applied 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 8 RMS limit 6 4 DC 2 See note (1) 100 0 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 03-Mar-15 Document Number: 95859 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 2 1 B 20 100 CT -1 L H M3 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Essential part number 3 - 4 - None = TO-262 7 = -1 Current rating (20 = 20 A) 5 - Voltage ratings 6 - CT = common cathode 7 - 8 - B = D2PAK 7 None None = D2PAK 3 =B -1 = TO-262 3 None 80 = 80 V 90 = 90 V 100 = 100 V None = tube (50 pieces) L = tape and reel (left oriented - for D2PAK only) R = tape and reel (right oriented - for D2PAK only) 9 - H = AEC-Q101 qualified 10 - M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-MBRB2080CTHM3 50 1000 Antistatic plastic tube VS-MBRB2090CTHM3 50 1000 Antistatic plastic tube VS-MBRB20100CTHM3 50 1000 Antistatic plastic tube VS-MBRB2080CTLHM3 800 800 13" diameter reel VS-MBRB2090CTLHM3 800 800 13" diameter reel VS-MBRB20100CTLHM3 800 800 13" diameter reel VS-MBRB2080CTRHM3 800 800 13" diameter reel VS-MBRB2090CTRHM3 800 800 13" diameter reel VS-MBRB20100CTRHM3 800 800 13" diameter reel VS-MBRB2080CT-1HM3 50 1000 Antistatic plastic tube VS-MBRB2090CT-1HM3 50 1000 Antistatic plastic tube VS-MBRB20100CT-1HM3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information TO-263AB (D2PAK) www.vishay.com/doc?95046 TO-262AA www.vishay.com/doc?95419 TO-263AB (D2PAK) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 TO-263AB (D2PAK) www.vishay.com/doc?95032 Revision: 03-Mar-15 Document Number: 95859 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC® outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 NOTES A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e L 2.54 BSC 4 4 4 2 0.100 BSC 13.46 14.10 0.530 0.555 L1 - L2 3.36 1.65 - 0.065 3.71 0.132 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) (5) (6) 3 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) , D1 (minimum) and L2 where dimensions derived the actual package outline Revision: 11-Jul-2019 Document Number: 95419 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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