VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3
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Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
VS-MBRB4045CTHM3
VS-MBR4045CT-1HM3
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Base
common
cathode
2
Base
common
cathode
2
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
• AEC-Q101 qualified, meets JESD 201 class 1A whisker
test
D2PAK
TO-262
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-263AB (D2PAK), TO-262AA
2 x 20 A
45 V
0.58 V
95 mA at 125 °C
150 °C
Common cathode
20 mJ
DESCRIPTION
The center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
IF(AV)
Rectangular waveform (per device)
40
IFRM
TC = 117 °C (per leg)
40
VRRM
UNITS
A
45
V
A
IFSM
tp = 5 μs sine
900
VF
20 Apk, TJ = 125 °C
0.58
V
TJ
Range
-65 to 150
°C
SYMBOL
VS-MBRB4045CTHM3
VS-MBR4045CT-1HM3
UNITS
VR
VRWM
45
V
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
Peak repetitive forward current per leg
SYMBOL
IF(AV)
TC = 118 °C, rated VR
IFRM
Rated VR, square wave, 20 kHz, TC = 117 °C
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
10 ms sine or 6 ms rect. pulse rated V
RRM applied
TJ = 25 °C, IAS = 3 A, L = 4.4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Maximum peak one cycle non-repetitive
peak surge current per leg
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
Revision: 06-Mar-14
TEST CONDITIONS
VALUES
20
40
40
900
UNITS
A
210
20
mJ
3
A
Document Number: 94721
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VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
20 A
Maximum forward voltage drop
VFM (1)
TJ = 25 °C
40 A
20 A
TJ = 125 °C
40 A
TJ = 25 °C
Maximum instantaneous
reverse current
IRM
(1)
VALUES
UNITS
0.60
0.80
0.58
V
0.80
1
TJ = 100 °C
Rated DC voltage
50
TJ = 125 °C
95
mA
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
900
pF
Typical series inductance
LS
Measured from top of terminal to mounting plane
8.0
nH
10 000
V/μs
VALUES
UNITS
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
-65 to 150
Maximum storage temperature range
TStg
-65 to 175
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
1.5
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
(Only for TO-220)
0.50
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
(For D2PAK and TO-262)
Approximate weight
Mounting torque
Marking device
Revision: 06-Mar-14
minimum
maximum
Non-lubricated threads
°C
°C/W
50
2
g
0.07
oz.
6 (5)
kgf · cm
(lbf · in)
12 (10)
Case style D2PAK
MBRB4045CTH
Case style TO-262
MBR4045CT-1H
Document Number: 94721
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VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 175 °C
100
10
TJ = 125 °C
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
TJ = 25 °C
0.001
1
0
0.5
1.0
1.5
2.0
0
2.5
5
10
15
20
25
30
35
40
45
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
900
800
700
600
500
TJ = 25 °C
400
300
200
0
10
20
30
50
40
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
t1
0.1
0.01
0.001
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.0001
0.001
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 06-Mar-14
Document Number: 94721
3
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3
www.vishay.com
Vishay Semiconductors
20
150
RMS limit
140
Average Power Loss (W)
Allowable Case Temperature (°C)
160
DC
130
120
110
Square wave (D = 0.50)
80 % rated VR applied
100
90
15
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
10
5
See note (1)
80
0
0
5
10
15
20
25
0
30
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 06-Mar-14
Document Number: 94721
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
B
40
45
CT
-1
RL
H
M3
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Essential part number
3
-
B = D2PAK
7
None
None = TO-262
4
-
7 = -1
Current rating (40 = 40 A)
5
-
Voltage rating (45 = 45 V)
6
-
CT = Essential part number
7
-
8
-
None = D2PAK
3
=B
-1 = TO-262
3
None
None = Tube
L = Tape and reel (left oriented - for D2PAK only)
9
10
-
R = Tape and reel (right oriented - for D2PAK only)
H = AEC-Q101 qualified
Environmental digit:
M3 = Halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-MBRB4045CTHM3
50
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-MBR4045CT-1HM3
50
1000
Antistatic plastic tube
VS-MBRB4045CTLHM3
800
800
13" diameter reel
VS-MBRB4045CTRHM3
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
Revision: 06-Mar-14
TO-263AB (D2PAK)
www.vishay.com/doc?95046
TO-262AA
www.vishay.com/doc?95419
(D2PAK)
www.vishay.com/doc?95444
TO-262AA
www.vishay.com/doc?95443
TO-263AB (D2PAK)
www.vishay.com/doc?95032
TO-263AB
Document Number: 94721
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
4
2
0.100 BSC
13.46
14.10
0.530
0.555
L1
-
L2
3.36
1.65
-
0.065
3.71
0.132
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
Revision: 11-Jul-2019
Document Number: 95419
1
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