VS-MBRB735-M3, VS-MBRB745-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 7.5 A
FEATURES
Base
cathode
2
• 150 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
2
1
3
Anode
1
3
N/C
• Guard ring for enhanced ruggedness and long term
reliability
D2PAK (TO-263AB)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
PRIMARY CHARACTERISTICS
• Designed and qualified according to JEDEC®-JESD 47
IF(AV)
7.5 A
VR
35 V, 45 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VF at IF
0.57 V
IRM
15 mA at 125 °C
TJ max.
150 °C
EAS
7 mJ
Package
D2PAK (TO-263AB)
Circuit configuration
Single
DESCRIPTION
The VS-MBRB7... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
7.5 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
7.5
A
35, 45
V
690
A
0.57
V
-65 to +150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VS-MBRB735-M3
VS-MBRB745-M3
UNITS
35
45
V
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Non-repetitive peak surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
IF(AV)
IFSM
TEST CONDITIONS
TC = 131 °C, rated VR
VALUES
7.5
Following any rated load condition
and with rated VRRM applied
690
Surge applied at rated load condition halfwave single phase 60 Hz
150
5 μs sine or 3 μs rect. pulse
UNITS
A
EAS
TJ = 25 °C, IAS = 2 A, L = 3.5 mH
7
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
A
Revision: 21-Dec-2021
Document Number: 96396
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB735-M3, VS-MBRB745-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
15 A
Maximum forward voltage drop
VFM (1)
7.5 A
15 A
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
IRM (1)
CT
LS
Maximum voltage rate of change
dV/dt
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated VR
VALUES
UNITS
0.84
V
0.57
0.72
0.1
mA
15
400
pF
8.0
nH
10 000
V/μs
VALUES
UNITS
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
-65 to 150
Maximum storage temperature range
TStg
-65 to 175
Maximum thermal resistance,
junction to case
RthJC
DC operation
3.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
°C/W
2
Approximate weight
Mounting torque
Marking device
°C
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Case style D2PAK (TO-263AB)
MBRB735
MBRB745
Revision: 21-Dec-2021
Document Number: 96396
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB735-M3, VS-MBRB745-M3
www.vishay.com
Vishay Semiconductors
100
10
IR - Reverse Current (mA)
IF - Instantaneous
Forward Current (A)
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
TJ = 150 °C
1
TJ = 125 °C
0.1
TJ = 100 °C
TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
1
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
5
10
15
20
25
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
0.1
0.01
0.001
0.00001
t1
Single pulse
(thermal resistance)
0.0001
0.001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 21-Dec-2021
Document Number: 96396
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB735-M3, VS-MBRB745-M3
Vishay Semiconductors
7
150
140
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
DC
130
Square wave (D = 0.50)
Rated VR applied
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
6
5
4
RMS limit
3
DC
2
1
See note (1)
0
120
0
2
4
6
8
10
0
12
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 21-Dec-2021
Document Number: 96396
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB735-M3, VS-MBRB745-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
B
7
45
3
4
5
TRL -M3
6
1
-
Vishay Semiconductors product
2
-
Essential part number
3
-
B = Surface mount
4
-
Current rating (7 = 7.5 A)
5
-
Voltage ratings
6
-
None = Tube
7
None = TO-220
35 = 35 V
45 = 45 V
TRL = Tape and reel (left oriented - for D2PAK only)
TRR = Tape and reel (right oriented - for D2PAK only)
7
-
-M3 = Halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
VS-MBRB735-M3
50
Antistatic plastic tubes
VS-MBRB735TRL-M3
800
13" diameter plastic tape and reel
VS-MBRB735TRR-M3
800
13" diameter plastic tape and reel
VS-MBRB745-M3
50
Antistatic plastic tubes
VS-MBRB745TRL-M3
800
13" diameter plastic tape and reel
VS-MBRB745TRR-M3
800
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
SPICE model
www.vishay.com/doc?95298
Revision: 21-Dec-2021
Document Number: 96396
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2022
1
Document Number: 91000
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