VS-MUR2020CT-M3

VS-MUR2020CT-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 10 A FRED Pt® FEATURES Base common cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 3L TO-220AB • Designed and qualified according to JEDEC®-JESD 47 2 Common cathode Anode 1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 3 DESCRIPTION / APPLICATIONS VS-MUR2020CT-M3 is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. PRIMARY CHARACTERISTICS Package 3L TO-220AB IF(AV) 2 x 10 A VR 200 V VF at IF 0.85 V The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. trr typ. 19 ns TJ max. 175 °C Circuit configuration Common cathode These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM per leg Average rectified forward current IF(AV) total device Non-repetitive peak surge current per leg IFM Operating junction and storage temperatures UNITS 200 V 10 Rated VR, TC = 145 °C 20 IFSM Peak repetitive forward current per leg MAX. 100 Rated VR, square wave, 20 kHz, TC = 145 °C TJ, TStg A 20 -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 8 A, TJ = 125 °C - - 0.85 IF = 16 A - - 1.15 1.05 IR = 100 μA IF = 16 A, TJ = 125 °C - - VR = VR rated - - 15 TJ = 150 °C, VR = VR rated - - 250 UNITS V Reverse leakage current IR Junction capacitance CT VR = 200 V - 55 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Revision: 02-Aug-17 Document Number: 96201 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR2020CT-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35 IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A - - 25 TJ = 25 °C - 21 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr UNITS ns - 35 - - 1.9 - - 4.8 - TJ = 25 °C - 25 - TJ = 125 °C - 78 - MIN. TYP. MAX. UNITS -65 - 175 °C - - 2.5 - - 1.25 - - 50 - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) TJ = 25 °C TJ = 125 °C IF = 10 A dIF/dt = 200 A/μs VR = 160 V A nC THERMAL MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg per leg Thermal resistance, junction to case RthJC total device Thermal resistance, junction to ambient per leg RthJA Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased Weight 6.0 (5.0) Mounting torque Marking device Case style 3L TO-220AB 100 °C/W g MUR2020CT 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 175 °C 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 0.01 TJ = 25 °C 0.001 0.1 0 0.4 0.8 1.2 1.6 2.0 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 50 100 150 200 250 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 02-Aug-17 Document Number: 96201 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR2020CT-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 . 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 15 Average Power Loss (W) Allowable Case Temperature (°C) 180 170 160 DC 150 Square wave (D = 0.50) Rated VR applied 140 12 RMS limit 9 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 6 3 DC See note (1) 130 0 0 3 6 9 12 15 0 3 6 9 12 15 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 02-Aug-17 Document Number: 96201 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR2020CT-M3 www.vishay.com Vishay Semiconductors 50 250 VR = 160 V TJ = 125 °C TJ = 25 °C 30 Qrr (nC) trr (ns) 40 20 10 IF = 20 A IF = 10 A IF = 5 A 200 VR = 160 V TJ = 125 °C TJ = 25 °C 150 IF = 20 A IF = 10 A IF = 5 A 100 50 0 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR (1) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 02-Aug-17 Document Number: 96201 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR2020CT-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MUR 1 2 20 20 CT -M3 3 4 5 6 1 - Vishay Semiconductors product 2 - Ultrafast MUR series 3 - Current rating (20 = 20 A) 4 - Voltage rating (20 = 200 V) 5 - CT = center tap (dual) 6 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-MUR2020CT-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 SPICE model www.vishay.com/doc?95272 Revision: 02-Aug-17 Document Number: 96201 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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