VS-MUR3020WT-N3
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Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt®
FEATURES
Common
cathode
2, Base
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
1
• Designed and qualified
JEDEC®-JESD 47
2
3
1
Anode
1
TO-247AC 3L
according
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
Anode
2
DESCRIPTION / APPLICATIONS
VS-MUR3020WT... is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VR
200 V
VF at IF
0.85 V
trr typ.
See Recovery table
TJ max.
175 °C
Package
TO-247AC 3L
Circuit configuration
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
TEST CONDITIONS
VRRM
per leg
Average rectified forward current
IF(AV)
total device
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
MAX.
UNITS
200
V
15
Rated VR, TC = 150 °C
30
IFSM
tp = 10 ms
200
IFM
Rated VR, square wave, 20 kHz, TC = 150 °C
TJ, TStg
A
30
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 15 A
-
-
1.05
IR = 100 μA
IF = 15 A, TJ = 150 °C
-
-
0.85
VR = VR rated
-
-
10
TJ = 150 °C, VR = VR rated
-
-
500
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 200 V
-
55
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
12
-
nH
Revision: 09-Oct-2018
Document Number: 94080
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VS-MUR3020WT-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
TYP.
MAX.
-
-
35
-
22
-
-
39
-
-
1.6
-
-
4.1
-
TJ = 25 °C
-
19
-
TJ = 125 °C
-
90
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
-
1.5
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and
greased
-
0.5
-
-
6.0
-
g
-
0.21
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
MIN.
IF = 1.0 A, diF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 15 A
diF/dt = 200 A/μs
VR = 160 V
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
Weight
Mounting torque
Marking device
Case style TO-247AC 3L
°C/W
MUR3020WT
Revision: 09-Oct-2018
Document Number: 94080
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR3020WT-N3
Vishay Semiconductors
100
1000
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
1
TJ = 175 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
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100
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1
0.1
0.1
TJ = 25 °C
0.01
0
0.3
0.6
0.9
0
1.5
1.2
50
100
150
200
250
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
1
10
100
1000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
.
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 09-Oct-2018
Document Number: 94080
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-MUR3020WT-N3
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Vishay Semiconductors
60
170
50
160
40
trr (ns)
Allowable Case Temperature (°C)
180
DC
150
Square wave (D = 0.50)
Rated VR applied
140
IF = 30 A
IF = 15 A
IF = 8 A
30
20
See note (1)
130
0
10
5
15
20
10
100
25
1000
IF(AV) - Average Forward Current (A)
diF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. diF/dt
25
200
20
RMS limit
15
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
10
5
DC
5
10
15
20
160
VR = 160 V
TJ = 125 °C
TJ = 25 °C
120
IF = 30 A
IF = 15 A
IF = 8 A
80
40
0
0
Qrr (nC)
Average Power Loss (W)
VR = 160 V
TJ = 125 °C
TJ = 25 °C
25
0
100
1000
IF(AV) - Average Forward Current (A)
diF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. diF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(1)
Revision: 09-Oct-2018
Document Number: 94080
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR3020WT-N3
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Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
VS- MUR
Device code
1
2
30
20
WT
-N3
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Ultrafast MUR series (TO-247AC)
3
-
Current rating (30 = 30 A)
4
-
Voltage rating (20 = 200 V)
5
-
WT = center tap (dual) TO-247
6
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-MUR3020WT-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96138
Part marking information
www.vishay.com/doc?95007
Revision: 09-Oct-2018
Document Number: 94080
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AC 3L
DIMENSIONS in millimeters and inches
A
A
E (3)
B
A2
S
R/2 (2)
(Datum B)
Ø P (6)
Ø P1
Ø K M DBM
A
Q
D2
2 x R (2)
D1 (4)
D
Thermal pad
2
1
4
D
3
L1 (5)
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
C
2x e
A1
b4
E1 (4)
0.01 M D B M
(b1, b3, b5)
Plating
View A - A
Base metal
D DE
(c)
c1
(b, b2, b4)
C
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
C
(4)
View B
Section C - C, D - D, E - E
SYMBOL
E
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q
Revision: 20-Jun-17
Document Number: 96138
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 01-Jan-2019
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Document Number: 91000
