VS-MURD620CT-M3
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Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt®
FEATURES
Base
common
cathode
4
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
DPAK (TO-252AA)
2
Common
cathode
1
3
Anode
Anode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
2x3A
VR
200 V
VF at IF
0.9 V
trr typ.
See Recovery table
TJ max.
175 °C
Package
DPAK (TO-252AA)
Circuit configuration
Common cathode
VS-MURD620CT-M3 is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current per device
IF(AV)
Non-repetitive peak surge current
IFSM
Peak repetitive forward current per diode
IFM
Operating junction and storage temperatures
TEST CONDITIONS
MAX.
UNITS
200
V
Total device, rated VR, TC = 146 °C
6
A
50
Rated VR, square wave, 20 kHz, TC = 146 °C
TJ, TStg
6
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
IR = 100 μA
MIN.
TYP.
MAX.
200
-
-
IF = 3 A
-
0.9
1.0
IF = 3 A, TJ = 125 °C
-
0.78
0.96
IF = 6 A
-
1
1.2
IF = 6 A, TJ = 125 °C
-
0.89
1.13
VR = VR rated
-
-
5
TJ = 125 °C, VR = VR rated
-
-
250
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 200 V
-
12
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
Reverse recovery time
trr
IRRM
TYP.
MAX.
-
-
35
IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A
-
-
25
TJ = 25 °C
-
19
-
-
26
-
TJ = 125 °C
Peak recovery current
MIN.
IF = 3 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 25 °C
TJ = 125 °C
-
3.1
-
-
4.6
-
UNITS
ns
A
TJ = 25 °C
-
30
-
TJ = 125 °C
-
60
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
-
9.0
Thermal resistance,
junction to ambient per leg
RthJA
-
-
80
Thermal resistance,
case to heatsink
RthCS
-
-
-
Reverse recovery charge
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
Mounting surface, flat, smooth, and greased
Weight
Mounting torque
Marking device
Case style DPAK (TO-252AA)
°C/W
-
0.3
-
g
-
0.01
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
MURD620CT
Revision: 09-Dec-2019
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VS-MURD620CT-M3
Vishay Semiconductors
100
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
1
TJ = 175 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
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10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.001
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
50
0
1.6
100
200
150
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
1
10
100
1000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
.
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 09-Dec-2019
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50
40
IF = 3 A
IF = 6 A
160
DC
150
Square wave (D = 0.50)
Rated VR applied
140
30
20
130
See note (1)
10
100
120
0
1
2
3
4
5
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
4.5
140
4.0
120
3.5
VR = 30 V
TJ = 125 °C
TJ = 25 °C
100
3.0
RMS limit
2.5
Qrr (nC)
Average Power Loss (W)
VR = 30 V
TJ = 125 °C
TJ = 25 °C
170
trr (ns)
Allowable Case Temperature (°C)
180
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
2.0
1.5
1.0
DC
0.5
1
2
3
4
80
60
40
20
0
0
IF = 6 A
IF = 3 A
5
0
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(1)
Revision: 09-Dec-2019
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VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
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ORDERING INFORMATION TABLE
Device code
VS- MUR
1
2
D
6
20
CT
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Ultrafast MUR series
3
-
D = D-PAK
4
-
Current rating (6 = 6 A)
5
-
Voltage rating (20 = 200 V)
6
-
CT = center tap (dual)
7
-
Tape and reel suffix
8
-
Environmental digit:
TRL -M3
7
8
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-MURD620CT-M3
VS-MURD620CTTR-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
75
3000
Antistatic plastic tube
2000
2000
13" diameter reel
VS-MURD620CTTRL-M3
3000
3000
13" diameter reel
VS-MURD620CTTRR-M3
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95627
Part marking information
www.vishay.com/doc?95176
Packaging information
www.vishay.com/doc?95033
Revision: 09-Dec-2019
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Outline Dimensions
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Vishay Semiconductors
D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
(5)
A
E
b3
(3)
Pad layout
C
A
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
0.245
MIN.
(6.23)
D1
L4
3
0.265
MIN.
(6.74)
E1
3
2
0.488 (12.40)
0.409 (10.40)
1
0.089
MIN.
(2.28)
Detail “C”
(2) L5
b
2x e
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2.29 BSC
INCHES
MIN.
2.74 BSC
L2
0.51 BSC
NOTES
0.090 BSC
0.108 REF.
0.020 BSC
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC® outline TO-252AA
Revision: 24-Jun-16
Document Number: 95627
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2023
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