VS-QA300FA17
www.vishay.com
Vishay Semiconductors
Insulated Gen 2 Schottky Rectifier Module, 300 A
FEATURES
• Max. TJ = 175 °C
• Two fully independent diodes
• Fully insulated package
• Trench MOS Barrier Schottky technology
• Ultra low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
SOT-227
• Easy to use and parallel
ADDITIONAL RESOURCES
• Industry standard outline
• Designed and qualified for industrial level
A
• UL approved file E78996
Application
Notes
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION
IF(AV) per module at TC = 132 °C
300 A
VR
170 V
VFM at 100 A, TC = 25 °C
0.79 V
The VS-QA300FA17 insulated modules integrate two state
of the art Trench MOS Schottky technology rectifiers in the
compact, industry standard SOT-227 package.
Package
SOT-227
Circuit configuration
Two separate diodes, parallel
pin-out
These devices are thus intended for high frequency
converters and switching power supplies.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VF
TJ = 150 °C
TJ
Range
VALUES
UNITS
0.69
V
-55 to +175
°C
VALUES
UNITS
300
A
170
V
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise specified)
PARAMETER
Average forward current per module
SYMBOL
IF(AV)
Cathode to anode voltage
VR
Continuous forward current per diode
IF
Single pulse forward current per diode
IFSM
Maximum power dissipation per diode
Non-repetitive avalanche energy per diode
RMS isolation voltage
Operating junction and storage temperatures
TEST CONDITIONS
TC = 132 °C
TC = 90 °C
330
TC = 175 °C, t = 6 ms, square
1575
PD
TC = 90 °C
327
W
EAS
TJ = 25 °C, IAS = 27 A, L = 10 mH
3700
mJ
Any terminal to case, t = 1 min
2500
V
-55 to +175
°C
VISOL
TJ, TStg
A
Revision: 18-Nov-2020
Document Number: 96194
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VS-QA300FA17
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
SYMBOL
VBR
VFM
Reverse leakage current
IRM
Junction capacitance
CT
MIN.
TYP.
MAX.
IR = 2 mA
TEST CONDITIONS
170
-
-
IF = 100 A
-
0.79
0.85
IF = 100 A, TJ = 150 °C
-
0.62
-
IF = 200 A
-
0.89
0.98
UNITS
V
IF = 200 A, TJ = 150 °C
-
0.75
-
VR = 170 V
-
13
200
μA
TJ = 125 °C, VR = 170 V
-
20
-
mA
VR = 170 V
-
737
-
pF
MAX.
UNITS
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
TEST CONDITIONS
MIN.
TYP.
TJ = 25 °C
-
71
-
TJ = 125 °C
-
82
-
-
7.1
-
-
8.8
-
TJ = 25 °C
-
252
-
TJ = 125 °C
-
352
-
MIN.
TYP.
MAX.
-
-
0.26
-
-
0.13
-
0.1
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.8 (15.9)
Nm (lbf.in)
TJ = 25 °C
TJ = 125 °C
IF = 50 A
diF/dt = 200 A/μs
VR = 100 V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction-to-case, single leg conducting
Junction-to-case, both leg conducting
Case-to-heatsink
SYMBOL
TEST CONDITIONS
RthJC
RthCS
Flat, greased surface
Weight
Mounting torque
Case style
UNITS
°C/W
SOT-227
Revision: 18-Nov-2020
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-QA300FA17
Vishay Semiconductors
1000
400
TJ = 175 °C
350
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 175 °C
300
250
200
TJ = 150 °C
150
TJ = 125 °C
100
TJ = 25 °C
50
0
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
30
50
70
90
110
130
150
170
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current (Per Diode)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Diode)
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Diode)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.01
0.02
0.05
0.1
0.2
0.5
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Junction-to-Case Characteristics (Per Diode)
Revision: 18-Nov-2020
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VS-QA300FA17
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Vishay Semiconductors
700
180
VR = 100 V
IF = 50 A
600
160
500
140
TJ = 125 °C
120
Qrr (nC)
Allowable Case Temperature (°C)
200
DC
100
80
60
Square wave (D = 0.50)
rated VR applied
40
400
300
TJ = 25 °C
200
100
20
0
0
0
50 100 150 200 250 300 350 400 450 500 550
100
200
300
500
dIF/dt (A/μs)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Current Rating Capability (Per Diode)
Fig. 7 - Typical Reverse Recovery Charge vs dIF/dt (Per Diode)
100
200
VR = 100 V
IF = 50 A
180
90
160
140
120
trr (ns)
Average Power Loss (W)
400
100
80
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
60
40
20
80
70
TJ = 125 °C
60
TJ = 25 °C
50
0
0
25
50
75
100
100 125 150 175 200 225
200
300
400
500
dIF/dt (A/μs)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Diode)
Fig. 8 - Typical Reverse Recovery Time vs dIF/dt (Per Diode)
16
VR = 100 V
IF = 50 A
14
TJ = 125 °C
Irr (A)
12
10
TJ = 25 °C
8
6
4
100
200
300
400
500
dIF/dt (A/μs)
Fig. 9 - Typical Reverse Recovery Current vs dIFdt (Per Diode)
Revision: 18-Nov-2020
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VS-QA300FA17
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 18-Nov-2020
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-QA300FA17
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
Q
A
300
F
A
17
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Schottky technologies
3
-
Present silicon generation
4
-
Current rating (300 = 300 A)
5
-
Circuit configuration (two separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (17 = 170 V)
Quantity per tube is 10, M4 screw and washer included
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
Two separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Part marking information
www.vishay.com/doc?95425
Revision: 18-Nov-2020
Document Number: 96194
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
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Revision: 19-May-2020
Legal Disclaimer Notice
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