VS-RA160FA120
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Vishay Semiconductors
SOT-227 Power Module
Insulated Standard Recovery Rectifier, 160 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• High voltage rectifiers optimized for very low
forward voltage drop
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SOT-227
DESCRIPTION / APPLICATIONS
These devices are intended for use in main rectification.
Single or three phase bridge.
PRIMARY CHARACTERISTICS
IF(AV) per module
160 A, TC = 101 °C
VFM typical at 100 A
1.16 V
Type
Modules - diode, high voltage
Package
SOT-227
Circuit configuration
Two separate diodes, parallel pin-out
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
90 °C
IF(AV)
VALUES
IF(RMS)
138
50 Hz
IFSM
I2t
UNITS
91
940
60 Hz
985
50 Hz
4420
60 Hz
4015
I2√t
44 180
VRRM
TJ
A
A2s
A2√s
1200
V
-55 to +150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM TYPICAL
AT 150 °C
mA
VS-RA160FA120
120
1200
1300
1.0
Revision: 18-Nov-2020
Document Number: 96330
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VS-RA160FA120
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current at case
temperature per leg
IF(AV)
Maximum RMS forward current per leg
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current per leg
TEST CONDITIONS
VALUES
UNITS
180° conduction, half sine wave, 90 °C
91
A
DC at 101 °C case temperature
138
t = 10 ms
No voltage
reapplied
940
100 % VRRM
reapplied
790
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum
I2t
t = 8.3 ms
I2t
for fusing per leg
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing per leg
I2√t
Low level of threshold voltage per leg
VF(TO)2
High level value of forward slope resistance
Maximum forward voltage drop per leg
825
4015
VFM
A2s
3125
100 % VRRM
reapplied
2840
44 180
(I > π x IF(AV)), TJ = TJ maximum
rf2
A
4420
(16.7 % x π x IF(AV)) < I < π x IF(AV), TJ = TJ maximum
rf1
High level of threshold voltage per leg
Sinusoidal half wave,
initial
TJ = TJ maximum
t = 0.1 ms to 10 ms, no voltage reapplied
VF(TO)1
Low level value of forward slope resistance
No voltage
reapplied
985
A2√s
0.80
V
4.32
mΩ
0.93
V
4.14
mΩ
IFM = 100 A, TJ = 25 °C
1.27
IFM = 100 A, TJ = 150 °C
1.22
V
BLOCKING
PARAMETER
SYMBOL
Maximum peak reverse leakage current
per leg
IRRM
RMS insulation voltage
VINS
TEST CONDITIONS
VALUES
UNITS
TJ = 25 °C
150
μA
TJ = 150 °C
1.5
mA
2500
V
TJ = 25 °C, any terminal to case, t = 1 minute
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
-
-
0.26
-
-
0.13
-
0.1
-
Weight
-
30
-
g
Mounting torque to terminal
-
-
1.1 (9.7)
Nm (lbf. in)
Mounting torque to heatsink
-
-
1.8 (15.9)
Nm (lbf. in)
per leg
Thermal resistance,
junction to case
per module
Thermal resistance, case to heatsink
per module
RthJC
RthCS
Case style
UNITS
°C/W
SOT-227
ΔR CONDUCTION PER JUNCTION
DEVICE
VS-RA160FA120
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.109
0.122
0.149
0.213
0.355
0.069
0.119
0.159
0.223
0.358
UNITS
°C/W
Revision: 18-Nov-2020
Document Number: 96330
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-RA160FA120
Vishay Semiconductors
160
180 °C
140
RthJC(DC) = 0.26 °C/W
120 °C
120
100
90 °C
Ø
Conduction angle
80
60 °C
60
30 °C
40
20
0
0
25
50
75
100
125
150
175
Maximum Average Power Loss (W)
Maximum Allowable Case Temperature
(°C)
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200
180 °C
120 °C
90 °C
60 °C
30 °C
150
100
RMS limit
Ø
Conduction Period
50
Per leg, TJ = 150 °C
0
0
200
RthJC(DC) = 0.2 °C/W
140
120 °C
120
Ø
100
Conduction Period
90 °C
80
60 °C
60
30 °C
40
20
0
0
50
100
150
200
250
Ø
Conduction angle
Per leg, TJ = 150 °C
0
25
50
75
140
DC
Ø
Conduction Period
Per leg, TJ = 150 °C
50
0
0
20
40
60
80
100
120
140
100
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics (A)
Fig. 5 - Forward Power Loss Characteristics
Peak Half-Sine Wave Forward Current (A)
Maximum Average Power Loss (W)
90 °C
0
120
Average Forward Current (A)
RMS limit
120 °C
50
100
RMS limit
100
300
180 °C
60 °C
30 °C
80
180 °C
120 °C
90 °C
60 °C
30 °C
150
Fig. 2 - Current Ratings Characteristics (A)
100
60
200
Average Forward Current (A)
150
40
Fig. 4 - Forward Power Loss Characteristics
Maximum Average Power Loss (W)
Maximum Allowable Case Temperature
(°C)
Fig. 1 - Current Ratings Characteristics (A)
DC 180 °C
20
Average Forward Current (A)
Average Forward Current (A)
160
DC
1000
800
600
400
200
1
10
100
Number of Equal Amplitute
Half-Cycle Current Pulses (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 18-Nov-2020
Document Number: 96330
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-RA160FA120
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Vishay Semiconductors
500
450
TJ = 125 °C
400
350
TJ = 25 °C
IF (A)
300
250
TJ = 150 °C
200
150
100
50
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Instantaneous Forward Voltage (V)
Fig. 7 - Typical Forward Voltage Characteristics
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
Steady state value
RthJC = 0.26 °C/W
(DC operation)
0.1
Per leg
0.01
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
R
A
160
F
A
120
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Standard recovery diode
3
-
Present silicon generation
4
-
Current rating (160 = 160 A)
5
-
Circuit configuration (2 separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (120 = 1200 V)
Revision: 18-Nov-2020
Document Number: 96330
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-RA160FA120
www.vishay.com
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
Two separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 18-Nov-2020
Document Number: 96330
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 19-May-2020
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Document Number: 91000
