VS-SA61BA60
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Vishay Semiconductors
Single Phase Fast Recovery Bridge (Power Modules), 61 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Simplified mechanical designs, rapid assembly
• Excellent power/volume ratio
• Designed and qualified for industrial and consumer level
SOT-227
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
600 V
DESCRIPTION
IO
61 A
trr
170 ns
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
VRRM
Type
Modules - Bridge, Fast
Package
SOT-227
Circuit configuration
Single phase bridge
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IO
IFSM
I2t
VALUES
UNITS
61
A
TC
57
°C
50 Hz
300
60 Hz
310
50 Hz
442
60 Hz
402
VRRM
TJ
A
A2s
600
V
-55 to +150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
SA61BA60
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ MAXIMUM
mA
60
600
700
10
Revision: 02-Mar-18
Document Number: 94688
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VS-SA61BA60
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum DC output current
at case temperature
IO
TEST CONDITIONS
t = 10 ms
Maximum peak, one-cycle
non-repetitive forward current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
Value of threshold voltage
VF(TO)
Forward slope resistance
rt
Maximum forward voltage drop
VFM
RMS isolation voltage base plate
VISOL
VALUES
Resistive or inductive load
A
57
°C
300
t = 8.3 ms
No voltage
reapplied
310
t = 10 ms
100 % VRRM
250
t = 8.3 ms
reapplied
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
100 % VRRM
313
t = 8.3 ms
reapplied
284
442
402
A2s
kA2s
4.4
TJ maximum
TJ = TJ maximum, IFM = 30 Apk
A
260
Initial TJ =
TJ maximum
I2t for time tx = I2t x tx0.1 tx 10 ms, VRRM = 0 V
TJ = 25 °C, IFM = 30 Apk
UNITS
61
0.914
V
10.5
m
1.33
tp = 400 μs
V
1.23
f = 50 Hz, t = 1 s
3000
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time, typical
Reverse recovery current, typical
Reverse recovery charge, typical
trr
Irr
Qrr
TEST CONDITIONS
VALUES
TJ = 25 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
170
TJ = 125 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
250
TJ = 25 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
10.5
TJ = 125 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
16
UNITS
ns
IFM
trr
A
TJ = 25 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
900
TJ = 125 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
1970
t
dIR
dt
Qrr
IRM(REC)
nC
Snap factor, typical
S
TJ = 25 °C
0.6
-
Junction capacitance, typical
CT
VR = 600 V
67
pF
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Thermal resistance junction to case, per diode
Thermal resistance junction to case, per module
Thermal resistance case to heatsink
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJC
RthCS
Flat, greased surface
Case style
TYP.
MAX.
UNITS
- 55
-
150
°C
-
-
1.2
-
-
0.30
-
°C/W
-
0.05
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.8 (15.9)
Nm (lbf.in)
Weight
Mounting torque
MIN.
SOT-227
Revision: 02-Mar-18
Document Number: 94688
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VS-SA61BA60
Vishay Semiconductors
1000
1000
100
TJ = 150 °C
CT - Junction Capacitance (pF)
IF - Instantaneous Forward Current (A)
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TJ = 125 °C
TJ = 25 °C
10
100
10
1
0
0.5
1
1.5
2
2.5
3
10
3.5
1000
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10 000
220
TJ = 150 °C
1000
200
Average Power Loss (W)
IR - Reverse Current (μA)
100
TJ = 125 °C
100
TJ = 25 °C
10
1
180
180˚
(Sine)
160
140
180˚
(Rect)
120
100
80
60
40
20
0.1
0
0
100
200
300
400
500
600
0
10
20
30
40
50
IF(AV) - Average Forward Current (A)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 4 - Current Rating Characteristics
Allowable Case Temperature (°C)
VR - Reverse Voltage (V)
60
150
140
130
120
110
180˚
(Rect)
100
90
80
180˚
(Sine)
70
60
50
40
0
10
20
30
40
50
60
70
IF(AV) - Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
Revision: 02-Mar-18
Document Number: 94688
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VS-SA61BA60
ZthJC - Thermal Impedance (°C/W)
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Vishay Semiconductors
10
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t2
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
2. Peak TJ = Pdm x ZthJC + Tc
0 .01
0.00001
0.0001
0.001
0.01
0.1
1
tp - Square Wave Pulse Duration (μs)
Fig. 6 - Typical Forward Voltage Drop Characteristics
300
IF = 20 A
250
4000
VR = 30 V
IF = 30 A
VR = 30 V
IF = 10 A
3000
125 °C
IF = 20 A
Qrr (nC)
200
trr (ns)
IF = 30 A
3500
150
2500
2000
125 °C
IF = 10 A
1500
25 °C
100
1000
25 °C
500
50
100
100
1000
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
VR = 30 V
IF = 30 A
35
IRR (A)
IF = 20 A
25
125 °C
15
IF = 10 A
25 °C
5
100
1000
dIF/dt (A/μs)
Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt
Revision: 02-Mar-18
Document Number: 94688
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VS-SA61BA60
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VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
S
A
61
B
A
60
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
S = fast recovery diode
3
-
A = present silicon generation
4
-
Current rating (61 = 61 A)
5
-
Circuit configuration:
6
-
B = single phase bridge
Package indicator:
A = SOT-227, standard insulated base
7
-
Voltage rating (60 = 600 V)
Revision: 02-Mar-18
Document Number: 94688
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SA61BA60
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Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION
CODE
CIRCUIT DRAWING
Lead Assignment
3 (-)
(AC) 4
Single phase bridge
4
3
1
2
B
(+) 1
2 (AC)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 02-Mar-18
Document Number: 94688
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
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Revision: 19-May-2020
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