VS-SD1100C..L Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Hockey PUK Version), 1170 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style B-PUK (DO-200AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
B-PUK (DO-200AB)
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
1170 A
Package
B-PUK (DO-200AB)
Circuit configuration
Single
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
VS-SD1100C..L
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
Ths
IFSM
I2t
VRRM
UNITS
04 to 20
25 to 32
1170
910
A
55
55
°C
2080
1660
A
25
25
°C
50 Hz
13 000
10 500
60 Hz
13 600
11 000
A
50 Hz
846
551
60 Hz
772
503
Range
400 to 2000
2500 to 3200
V
-40 to +180
-40 to +150
°C
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD1100C..L
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
25
2500
2600
30
3000
3100
32
3200
3300
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
Revision: 11-Jan-18
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VS-SD1100C..L Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
VS-SD1100C..L
TEST CONDITIONS
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
25 to 32
1170 (600)
910 (420)
A
55 (85)
55 (85)
°C
2080
1660
13 000
10 500
13 600
11 000
10 930
8830
11 450
9250
846
551
772
503
598
390
100 % VRRM
reapplied
546
356
t = 0.1 to 10 ms, no voltage reapplied
8460
5510
t = 10 ms
t = 8.3 ms
UNITS
04 to 20
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.78
0.84
High level value of threshold
voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.94
0.88
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.35
0.40
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.26
0.38
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.31
1.44
A
kA2s
kA2s
V
mW
Maximum forward voltage drop
VFM
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
SD1100C..L
TEST CONDITIONS
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
25 to 32
-40 to +180
-40 to +150
UNITS
°C
-55 to +200
TStg
RthJ-hs
DC operation single side cooled
0.11
DC operation double side cooled
0.05
Mounting force, ± 10 %
Approximate weight
Case style
04 to 20
See dimensions - link at the end of datasheet
K/W
9800
(1000)
N
(kg)
250
g
B-PUK (DO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.011
0.011
0.008
0.008
120°
0.014
0.015
0.014
0.014
90°
0.018
0.018
0.019
0.019
60°
0.026
0.026
0.027
0.028
30°
0.045
0.046
0.046
0.046
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93536
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VS-SD1100C..L Series
180
Vishay Semiconductors
SD1100C..L Series (400V to 2000V)
(Single Side Cooled)
RthJ-hs (DC) = 0.11 K/ W
160
140
120
Conduction Angle
100
30°
80
60°
90°
60
120°
180°
40
0
200
400
600
800
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heat sink Temperature (°C)
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180
SD1100C..L Series (400V to 2000V)
(Double Side Cooled)
RthJ-hs (DC) = 0.05 K/ W
160
140
120
100
Conduction Period
30°
80
60°
90°
60
120°
40
180°
DC
20
0
Average Forward Current (A)
SD1100C..L Series (400V to 2000V)
(Single Side Cooled)
RthJ-hs (DC) = 0.11 K/ W
160
140
120
Conduc tion Period
100
80
60
90°
60° 120°
40
30°
180°
DC
20
0
200
400
600
800
1000 1200
150
140
120
Conduction Angle
100
80
30°
60
60°
90°
120°
180°
40
20
0
200
400
600
800 1000 1200 1400
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
2500
130
120
110
100
Conduction Angle
90
80
30°
60°
70
90°
60
120°
180°
50
40
0
100
200
300 400
500
600
700
Fig. 5 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
160
2000
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
SD1100C..L Series (400V to 2000V)
(Double Side Cooled)
RthJ-hs (DC) = 0.05 K/ W
1500
SD1100C..L Series (2500V to 3200V)
(Single Side Cooled)
RthJ-hs (DC) = 0.11 K/ W
140
Average Forward Current (A)
180
1000
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
Fig. 1 - Current Ratings Characteristics
180
500
Average Forward Current (A)
150
SD1100C..L Series (2500V to 3200V)
(Single Side Cooled)
RthJ-hs (DC) = 0.11 K/ W
140
130
120
110
100
90
80
Conduction Period
70
60
50
90°
40
30
30°
60°
180° DC
20
0
200
120°
400
600
800
1000
Average Forward Current (A)
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
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VS-SD1100C..L Series
150
Vishay Semiconductors
SD1100C..L Series (2500V to 3200V)
(Double Side Cooled)
RthJ-hs (DC) = 0.05 K/ W
140
130
120
110
100
90
Conduction Angle
80
70
60
50
30°
60°
90°
40
120°
180°
30
20
0
200
400
600
800
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
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3500
DC
180°
120°
90°
60°
30°
3000
2500
2000
1500
Conduc tion Period
1000
SD1100C..L Series
(400V to 2000V)
TJ = 180°C
500
0
1000 1200
0
Average Forward Current (A)
100
90
Conduction Period
80
70
60
30°
60°
90°
50
120°
40
30
20
180°
DC
0
400
800
1200
1600
2000
2500
RMS Limit
1500
1000
Conduction Angle
SD1100C..L Series
(400V to 2000V)
TJ = 180°C
500
0
0
200
400
600
2000
2500
1800
180°
120°
90°
60°
30°
1600
1400
1200
800 1000 1200 1400
Average Forward Current (A)
Fig. 9 - Forward Power Loss Characteristics
RMS Limit
1000
800
Conduction Angle
600
SD1100C..L Series
(2500V to 3200V)
TJ = 150°C
400
200
0
0
200
400
600
800
1000 1200
Average Forward Current (A)
Fig. 11 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
Fig. 8 - Current Ratings Characteristics
2000
1500
2000
Average Forward Current (A)
180°
120°
90°
60°
30°
1000
Fig. 10 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
SD1100C..L Series (2500V to 3200V)
(Double Side Cooled)
RthJ-hs (DC) = 0.05 K/ W
140
130
120
110
500
Average Forward Current (A)
Fig. 7 - Current Ratings Characteristics
150
RMS Limit
2500
DC
180°
120°
90°
60°
30°
2000
1500
RMSLimit
1000
Conduction Period
SD1100C..L Series
(2500V to 3200V)
TJ = 150°C
500
0
0
400
800
1200
1600
2000
Average Forward Current (A)
Fig. 12 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93536
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VS-SD1100C..L Series
12000
Vishay Semiconductors
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 180°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
11000
10000
9000
8000
7000
6000
5000
SD1100C..L Series
(400V to 2000V)
4000
3000
1
10
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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100
11000
10000
9000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150 °C
No Voltage Reapplied
Rated VRRMReapplied
8000
7000
6000
5000
SD1100C..L Series
(2500V to 3200V)
4000
3000
0.01
0.1
14000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 180 °C
No Voltage Reapplied
Rated VRRM Reapplied
13000
12000
11000
10000
9000
8000
7000
6000
5000
SD1100C..L Series
(400V to 2000V)
4000
3000
0.01
0.1
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
TJ= 25°C
TJ= 180°C
1000
SD1100C..L Series
(400V to 2000V)
100
0.5
1
Pulse Train Duration (s)
8000
7000
6000
5000
SD1100C..L Series
(2500V to 3200V)
4000
3000
1
10
1.5
2
2.5
3
3.5
4
100
Number Of Eq ual Amp litude Half Cycle Current Pulses (N)
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
10000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
9000
1
Instantaneous Forward Voltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
1
Pulse Train Duration (s)
Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
TJ = 25°C
TJ = 150°C
1000
SD1100C..L Series
(2500V to 3200V)
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous Forward Voltage (V)
Fig. 18 - Forward Voltage Drop Characteristics
Revision: 11-Jan-18
Document Number: 93536
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VS-SD1100C..L Series
Transient Thermal Impedanc e Z thJ-hs (K/ W)
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Vishay Semiconductors
1
Steady State Value
RthJ-hs = 0.11 K/ W
(Single Side Cooled)
0.1
RthJ-hs = 0.05 K/ W
(Double Side Cooled)
(DC Operation)
0.01
SD1100C..L Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 19 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
110
0
C
32
L
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = standard recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
L = PUK case B-PUK (DO-200AB)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95246
Revision: 11-Jan-18
Document Number: 93536
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Outline Dimensions
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Vishay Semiconductors
B-PUK (DO-200AB)
DIMENSIONS in millimeters (inches)
58.5 (2.30) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03)
both ends
34 (1.34) DIA. MAX.
2 places
25.4 (1)
26.9 (1.06)
C
A
53 (2.09) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 12-Jul-17
Document Number: 95246
1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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1
Document Number: 91000
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