VS-SD1500C30L

VS-SD1500C..L Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Hockey PUK Version), 1600 A FEATURES • Wide current range • High voltage ratings up to 3000 V • High surge current capabilities • Diffused junction • Hockey PUK version • Case style B-PUK (DO-200AB) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 B-PUK (DO-200AB) TYPICAL APPLICATIONS • Converters PRIMARY CHARACTERISTICS • Power supplies IT(AV) 1600 A Package B-PUK (DO-200AB) Circuit configuration Single • Machine tool controls • High power drives • Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) Ths IF(RMS) Ths IFSM I2t VRRM VALUES UNITS 1600 A 55 °C 3010 A 25 °C 50 Hz 16 600 60 Hz 17 400 50 Hz 1386 60 Hz 1265 Range 400 to 3000 V -40 to +180 °C IRRM MAXIMUM AT TJ = TJ MAXIMUM mA TJ A kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD1500C..L VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 25 2500 2600 30 3000 3100 50 Revision: 11-Jan-18 Document Number: 93537 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1500C..L Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature IF(AV) Maximum RMS forward current IF(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one cycle,  non-repetitive surge current t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing t = 8.3 ms I2t t = 10 ms t = 8.3 ms Maximum I2t I2t for fusing VALUES No voltage  reapplied 100 % VRRM  reapplied No voltage  reapplied UNITS 1600 (820) A 55 (85) °C 3010 16 600 17 400 A 14 000 Sinusoidal half wave, initial TJ = TJ maximum 14 700 1386 1265 980 100 % VRRM reapplied kA2s 895 t = 0.1 to 10 ms, no voltage reapplied 13 860 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.83 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.95 kA2s V Low level value of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.27 High level value of forward slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 0.25 VFM Ipk = 3000 A TJ = TJ maximum,  tp = 10 ms sinusoidal wave 1.64 V VALUES UNITS Maximum forward voltage drop m THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance,  junction to heatsink TEST CONDITIONS TJ -40 to 180 TStg -55 to 200 RthJ-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 14 700 (1500) N (kg) 255 g B-PUK (DO-200AB) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.035 0.035 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93537 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1500C..L Series www.vishay.com 18 0 SD1500C..L Series (Single Side Cooled) R th J- hs (DC) = 0.073 K/W 160 140 120 Co n duc tio n A ng le 100 30° 80 60° 90° 60 120° 180° 40 0 200 400 600 800 1000 1200 M a x im u m A llo w a b le H e a t sin k T e m p e ra t ur e ( ° C ) Maxim um Allow able Heatsin k Tem perature ( °C) 180 Vishay Semiconductors S D 1 5 0 0 C ..L S e rie s (D o u b le S id e C o o le d ) R thJ-h s (D C ) = 0 .0 3 1 K/ W 16 0 14 0 12 0 C o nduc tio n Perio d 10 0 30° 80 60 ° 9 0° 60 120 ° 40 180 ° 20 DC 0 0 Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 4500 SD1500C..L Series (Single Side Cooled) R thJ-h s (D C) = 0.073 K/ W 160 M axim um Average Forward Power Loss (W ) M aximum Allowable Heatsink Tem perature ( °C) 180 140 120 100 C on duc tio n Pe rio d 80 60 90° 40 30° 60° 120° 180° D C 20 0 400 800 1200 1600 4000 180° 120° 90° 60° 30° 3500 3000 2500 1500 C o ndu ctio n A ng le 1000 SD1500C..L Series TJ = 180°C 500 0 0 2000 120 C o nduc tio n An gle 100 30° 60° 60 90° 120° 180° 40 20 0 400 800 1200 1200 1600 2000 1600 Fig. 5 - Forward Power Loss Characteristics 2000 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Maxim um Average Forward Power Loss (W ) 140 80 800 5000 SD1500C..L Series (Double Side Cooled) R th J- hs (DC) = 0.031 K/W 160 400 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics 180 RMS Lim it 2000 Avera ge Forward Curren t (A) Maximum Allowable Heatsink Tem perature ( °C) 50 0 1 00 0 1 5 00 20 0 0 2 50 0 30 0 0 3 50 0 A v e ra g e Fo rw a rd C u r re n t (A ) Average Forward Curren t (A) DC 180° 120° 90° 60° 30° 4000 3000 RMS L im it 2000 C o nd uctio n P erio d 1000 SD 1500C..L Series TJ = 180°C 0 0 500 1000 1500 2000 2500 3000 3500 Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93537 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1500C..L Series www.vishay.com 17000 At Any Rated Load Con dition An d W ith Rated V RR MApplied Following Surge. In itia l TJ = 180 °C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 14000 12000 Peak Half Sine W ave Forward Curren t (A) Peak Half Sin e W ave Forward Current (A) 16000 Vishay Semiconductors 10000 8000 6000 SD1500C..L Series 4000 1 10 Maxim um Non Repetitive Surge Current V ersus Pulse T rain Duration. Initial T J = 180°C No Voltage Reapplied Rated V RR MReapplied 15000 13000 11000 10 0 9000 7000 5000 SD 1500C..L Series 3000 0. 0 1 0 .1 1 Pulse Train Duration (s) N um be r O f E qual A m plit ude Ha lf C yc le C urre nt P ulse s (N ) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10000 Instan taneous Forw ard Curren t (A) TJ = 25°C TJ = 180°C 1000 SD 1500C..L Series 100 0.5 1 1.5 2 2.5 3 3.5 Instan ta neous Forw ard V oltage (V ) Fig. 9 - Forward Voltage Drop Characteristics 0 .1 T ra n sie n t T h e rm a l Im p e d an c e Z thJ-hs (K/W) St e a d y St at e V a lue R thJ-hs = 0 .0 7 3 K /W ( Sing le Sid e C o o le d ) R th J- hs = 0 .0 3 1 K /W ( D o u ble Sid e C o o le d ) 0 .0 1 ( D C O p e ra t io n ) S D 1 5 0 0 C ..L S e r ie s 0 .0 0 1 0.0 01 0.0 1 0 .1 1 10 S q u are W a v e P ulse D u rat io n ( s) Fig. 10 - Thermal Impedance ZthJC Characteristics Revision: 11-Jan-18 Document Number: 93537 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1500C..L Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- SD 150 0 C 30 L 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 0 = standard recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - L = PUK case B-PUK (DO-200AB) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95246 Revision: 11-Jan-18 Document Number: 93537 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors B-PUK (DO-200AB) DIMENSIONS in millimeters (inches) 58.5 (2.30) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 0.8 (0.03) both ends 34 (1.34) DIA. MAX. 2 places 25.4 (1) 26.9 (1.06) C A 53 (2.09) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95246 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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