VS-SD200N/R Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 200 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC® types
• Compression bonded encapsulations
DO-30 (DO-205AC)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
200 A
Package
DO-30 (DO-205AC)
Circuit configuration
Single
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
VS-SD200N/R
TEST CONDITIONS
1600 to 2000
I2t
VRRM
UNITS
200
200
A
TC
110
110
°C
314
314
50 Hz
4700
4700
60 Hz
4920
4920
50 Hz
110
110
60 Hz
101
101
Range
1600 to 2000
2400
V
-40 to +180
+150
°C
IF(RMS)
IFSM
2400
TJ
A
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD200N/R
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
16
1600
1700
20
2000
2100
24
2400
2500
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
Revision: 11-Jan-18
Document Number: 93541
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VS-SD200N/R Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
at case temperature
IF(AV)
Maximum average forward current
at case temperature
Maximum RMS forward current
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
180° conduction, half sine wave
I2Öt
220
A
100
°C
314
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
3950
Sinusoidal half wave,
initial
TJ = TJ maximum
4140
110
101
71
t = 0.1 to 10 ms, no voltage reapplied
1100
0.90
kA2s
78
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
1.00
Low level value of forward slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
0.79
High level value of forward slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.64
VFM
Ipk = 630 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.40
Maximum forward voltage drop
A
4920
100 % VRRM
reapplied
t = 10 ms
t = 8.3 ms
Maximum I2Öt for fusing
°C
4700
t = 10 ms
I2t
A
110
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
200
DC at 95 °C case temperature
t = 8.3 ms
UNITS
kA2Ös
V
mW
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
SD200N/R
TEST CONDITIONS
TJ
UNITS
1600 to 2000
2400
-40 to 180
-40 to 150
°C
-55 to 200
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.23
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
K/W
Maximum allowed
mounting torque ± 10 %
Not-lubricated threads
Approximate weight
Case style
See dimensions (link at the end of datasheet)
14
Nm
120
g
DO-30 (DO-205AC)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
180°
0.041
RECTANGULAR CONDUCTION TEST CONDITIONS
0.030
120°
0.049
0.051
90°
0.063
0.068
60°
0.093
0.096
30°
0.156
0.157
TJ = TJ maximum
UNITS
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93541
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD200N/R Series
180
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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SD200N/R Series
R thJC(DC) = 0.23 K/W
170
160
150
Conduction Angle
140
130
120
110
30°
60° 90° 120°
180°
100
0
40
80
120
160
200
240
Average Forward Current (A)
180
160
150
Conduction Period
140
130
120
110
90°
60°
100
120°
30°
180°
DC
90
0
50
100
150
200
250
300
350
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
300
3
4
8K
K/
0.0
K/
W
0.
=
W
-Δ
0.6
/W
200
0.
A
hS
250
Rt
W
K/
12
0. /W
K
2
180°
120°
90°
60°
30°
0.
K/
W
RMS Limit
0.8
150
R
Maximum Average Forward Power Loss (W)
SD200N/R Series
R thJC (DC) = 0.23 K/W
170
K/W
Conduction Angle
1.4 K
100
/W
SD200N/R Series
Tj = Tj max
50
1.8 K
/W
0
0
50
100
150
200
Average Forward Current (A)
250
40
60
80
100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
400
DC
180°
120°
90°
60°
30°
300
0.
2
0.
3
W
SD200N/R Series
Tj = Tj max
1.8 K/W
100
50
R
Conduction Period
RMS Limit
ta
K/
0.6 W
K/W
0.8
K/W
1.4 K
/W
200
150
W
K/
el
0.4
K/
-D
250
W
K/
08
0.
=
A
W
hS
K/
12
0.
350
Rt
Maximum Average Forward Power Loss (W)
Fig. 3 - Forward Power Loss Characteristics
0
0
50
100
150
200
250
300
Average Forward Current (A)
350 40
60
80
100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93541
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD200N/R Series
4500
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
4000
3500
3000
2500
2000
1500
SD200N/R Series
1000
1
10
100
5000
4500
4000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj max.
No Voltage Reapplied
Rated Vrrm Reapplied
3500
3000
2500
2000
1500
SD200N/R Series
1000
0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10 000
SD200N/R Series
1000
Tj = 25 °C
Tj = Tj max.
100
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Transient Thermal Impedance Z thJC (K/W)
Fig. 7 - Forward Voltage Drop Characteristics
1
Steady State Value:
R thJC = 0.23 K/W
(DC Operation)
0.1
SD200N/R Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Revision: 11-Jan-18
Document Number: 93541
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD200N/R Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
SD
20
0
N
24
P
C
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = standard recovery
5
-
N = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = stud base DO-30 (DO-205AC) 1/2" 20UNF-2A
M = stud base DO-30 (DO-205AC) M12 x 1.75
8
-
C = ceramic housing
For metric device M12 x 1.75 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95302
Revision: 11-Jan-18
Document Number: 93541
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-205AC (DO-30)
DIMENSIONS in millimeters (inches)
16.5 (0.65)
MAX.
Ceramic housing
2.6 (0.10)
MAX.
35 (1.38)
MAX.
6.5 (0.26) MIN.
DIA. 8.5 (0.33) NOM.
C.S. 16 mm2
(0.015 s.i.)
157 (6.18)
170 (6.69)
DIA. 22.5
(0.88) MAX.
55 (2.16)
MIN.
SW 27
12.5 (0.49)
MAX.
21 (0.82)
MAX.
1/2"-20UNF-2A*
*For metric device: M12 x 1.75
contact factory
Document Number: 95302
Revision: 11-Apr-08
For technical questions, contact: indmodules@vishay.com
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1
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Document Number: 91000
