VS-SD203N/R Series
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Fast Recovery Diodes
(Stud Version) 200 A
FEATURES
• High power fast recovery diode series
• 1.0 μs to 2.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
DO-9 (DO-205AB)
• Compression bonded encapsulation
• Stud version JEDEC® DO-9 (DO-205AB)
• Maximum junction temperature 125 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
200 A
Package
DO-9 (DO-205AB)
Circuit configuration
Single
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
TC
IF(RMS)
VALUES
UNITS
200
A
85
°C
314
IFSM
I2t
VRRM
trr
A
50 Hz
4990
60 Hz
5230
50 Hz
125
60 Hz
114
Range
400 to 2500
V
Range
1.0 to 2.0
μs
TJ
kA2s
25
-40 to +125
TJ
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD203N/R..S10
VS-SD203N/R..S15
VS-SD203N/R..S20
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
20
2000
2100
25
2500
2600
IRRM MAXIMUM
TJ = 125 °C
mA
35
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VS-SD203N/R Series
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum RMS current
314
t = 10 ms
t = 10 ms
Maximum I2t for fusing
I2t
°C
4990
t = 8.3 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
4200
4400
Sinusoidal half wave,
initial TJ = TJ maximum
125
114
88
t = 0.1 to 10 ms, no voltage reapplied
1250
1.00
t = 8.3 ms
Low level value of threshold voltage
VF(TO)1
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
1.47
Low level value of forward slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
1.10
High level value of forward slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.46
Ipk = 628 A, TJ = 25 °C, tp = 400 μs square pulse
1.65
VFM
kA2s
81
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
Maximum forward voltage drop
A
5230
100 % VRRM
reapplied
t = 10 ms
UNITS
200
DC at 76 °C case temperature
t = 8.3 ms
IFSM
Maximum I2t for fusing
VALUES
180° conduction, half sine wave
IF(RMS)
Maximum peak, one-cycle
non-repetitive forward current
TEST CONDITIONS
kA2s
V
mW
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
trr at 25 % IRRM
(μs)
S10
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
Vr
(V)
trr at 25 % IRRM
(μs)
Qrr
(μC)
Irr
(A)
2.4
52
33
1.0
S15
1.5
S20
2.0
750
25
-30
2.9
90
44
3.2
107
46
IFM
trr
t
dir
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
SYMBOL
TEST CONDITIONS
VALUES
TJ
-40 to 125
Maximum storage temperature range
TStg
-40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.115
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
Mounting torque ± 10 %
°C
K/W
Not-lubricated threads
Lubricated threads
Approximate weight
Case style
UNITS
31
24.5
250
See dimensions (link at the end of datasheet)
Nm
g
DO-9 (DO-205AB)
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VS-SD203N/R Series
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RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.010
0.008
120°
0.013
0.014
90°
0.017
0.019
60°
0.025
0.027
30°
0.044
0.044
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
130
SD203N/R Series
R thJC (DC) = 0.115 K/W
120
110
Conduction Angle
100
30°
90
60°
90°
120°
80
180°
70
0
40
80
120
160
200
240
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
350
180°
120°
90°
60°
30°
300
250
200
RMS Limit
150
Conduction Angle
100
SD203N/R Series
TJ = 125 °C
50
0
0
Average Forward Current (A)
130
SD203N/R Series
R thJC (DC) = 0.115 K/W
110
Conduction Period
100
90
30°
60°
90°
120°
80
180°
DC
70
0
50
100
150
200
250
300
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
100
150
200
Fig. 3 - Forward Power Loss Characteristics
350
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
Fig. 1 - Current Ratings Characteristics
120
50
Average Forward Current (A)
550
500
DC
180°
120°
90°
60°
30°
450
400
350
300
250
200 RMS Limit
Conduction Period
150
100
SD203N/R Series
TJ = 125°C
50
0
0
50
100
150
200
250
300
350
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
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VS-SD203N/R Series
5000
Vishay Semiconductors
10 000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial T J = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
4500
4000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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3500
3000
2500
2000
SD203N/R Series
1500
1000
TJ = 25 °C
TJ = 125 °C
1000
SD203N/R Series
100
1
10
100
0.5
Number Of Equal Amplitude Half Cycle Current Pulses (N)
2.5
4.5
6.5
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
5000
4500
4000
Transient Thermal Impedance ZthJC (K/W)
Peak Half Sine Wave Forward Current (A)
1
5500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 125 °C
No Voltage Reapplied
Rated VRRM Reapplied
3500
3000
2500
2000
1500
SD203N/R Series
Steady State Value:
R thJC = 0.115 K/W
(DC Operation)
0.1
0.01
SD203N/R Series
0.001
0.001
1000
0.01
0.1
0.01
1
0.1
1
10
Square Wave Pulse Duration (s)
Pulse Train Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 6 - Maximum Non-Repetitive Surge Current
120
V FP
Forward Recovery (V)
TJ = 125 °C
I
100
80
60
TJ = 25 °C
40
SD203N/R..S20 Series
20
0
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Rate Off Fall Of Forward Current di/dt (A/μs)
Fig. 9 - Typical Forward Recovery Characteristics
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VS-SD203N/R Series
2.8
SD203N/R..S10 Series
TJ = 125 °C, VR = 30 V
2.6
I FM = 750 A
2.4
Square Pulse
2.2
400 A
2
1.8
200 A
1.6
10
100
Maximum Reverse Recovery Time - trr (μs)
Vishay Semiconductors
SD203N/R..S15 Series
TJ = 125 °C, VR = 30 V
3.2
I FM = 750 A
2.8
Square Pulse
2.4
400 A
2
200 A
1.6
10
100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 10 - Recovery Time Characteristics
Fig. 13 - Recovery Time Characteristics
140
I FM = 750 A
Square Pulse
130
120
110
100
400 A
90
80
200 A
70
60
50
40
SD203N/R..S10 Series
TJ = 125 °C, VR = 30 V
30
20
10
0
20
40
60
80
100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Maximum Reverse Recovery Current - Irr (A)
100
I FM = 750 A
Square Pulse
90
400 A
80
200 A
70
60
50
40
SD203N/R..S10 Series
TJ = 125 °C, VR = 30 V
30
20
170
I FM = 750 A
160
Square Pulse
150
140
130
400 A
120
110
100
200 A
90
80
70
SD203N/R..S15 Series
TJ = 125 °C, VR = 30 V
60
50
10
20
30
40
50
60
70
80
90
100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 14 - Recovery Charge Characteristics
Fig. 11 - Recovery Charge Characteristics
Maximum Reverse Recovery Current - Irr (A)
3.6
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Maximum Reverse Recovery Charge - Qrr (μC)
Maximum Reverse Recovery Charge - Qrr (μC)
Maximum Reverse Recovery Time - trr (μs)
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130
I FM = 750 A
Square Pulse
120
110
100
90
400 A
80
70
200 A
60
50
40
30
SD203N/R..S15 Series
TJ = 125 °C, VR = 30 V
20
10
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 12 - Recovery Current Characteristics
Fig. 15 - Recovery Current Characteristics
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VS-SD203N/R Series
Vishay Semiconductors
Maximum Reverse Recovery Charge - Qrr (μC)
Maximum Reverse Recovery Time - trr (μs)
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3.6
SD203N/R..S20 Series
TJ = 125 °C, VR = 30 V
3.4
I FM = 750 A
Square Pulse
3.2
3
400 A
200 A
2.8
2.6
2.4
10
100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
300
250
200
400 A
150
200 A
100
SD203N/R..S20 Series
TJ = 125 °C, VR = 30 V
50
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 16 - Recovery Time Characteristics
Maximum Reverse Recovery Current - Irr (A)
I FM = 750 A
Square Pulse
Fig. 17 - Recovery Charge Characteristics
130
I FM = 750 A
Square Pulse
120
110
100
400 A
90
80
200 A
70
60
50
40
SD203N/R..S20 Series
TJ = 125 °C, VR = 30 V
30
20
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 18 - Recovery Current Characteristics
1E4
20 joules per pulse
10
20 joules per pulse
10
4
Peak Forward Current (A)
2
4
1
2
1
0.4
1E3
0.2
0.1
0.4
0.2
0.04
0.1
0.02
1E2
0.06
0.01
SD203N/R..S10 Series
Sinusoidal Pulse
TJ = 125 °C, VRRM = 1120 V
dv/dt = 1000 V/μs
1E1
1E1
1E2
tp
1E3
Pulse Basewidth (μs)
1E4
1E1
SD203N/R..S10 Series
Trapezoidal Pulse
TJ = 125 °C, VRRM = 1120 V
dv/dt = 1000 V/μs, di/dt = 50 A/μs
1E2
1E3
1E4
Pulse Basewidth (μs)
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
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1E4
20 joules per pulse
20 joules per pulse
10
10
4
Peak Forward Current (A)
4
2
2
1
1E3
1
0.4
0.4
0.2
0.1
0.2
0.04
0.02
1E2
0.1
0.01
tp
1E1
1E1
SD203N/R..S15 Series
Sinusoidal Pulse
TJ = 125 °C, VRRM = 1120 V
dv/dt = 1000 V/μs
1E2
tp
1E3
1E4
1E1
SD203N/R..S15 Series
Trapezoidal Pulse
TJ = 125 °C, VRRM = 1120 V
dv/dt = 1000 V/μs, di/dt = 50 A/μs
1E2
1E3
1E4
Pulse Basewidth (μs)
Pulse Basewidth (μs)
Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
20 joules per pulse
20 joules per pulse
10
10
Peak Forward Current (A)
4
4
2
1E3
2
1
1
0.4
0.4
0.2
0.1
1E2
0.2
0.04
tp
1E1
1E1
SD203N/R..S20 Series
Sinusoidal Pulse
TJ = 125 °C, VRRM = 1760 V
dv/dt = 1000 V/μs
1E2
0.02
0.01
1E3
Pulse Basewidth (μs)
tp
1E4
1E1
SD203N/R..S80 Series
Trapezoidal Pulse
TJ = 125 °C, VRRM = 1760 V
dv/dt = 1000 V/μs, di/dt = 50 A/μs
1E2
1E3
1E4
Pulse Basewidth (μs)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
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ORDERING INFORMATION TABLE
Device code
VS-
SD
20
3
R
25
S20
P
B
C
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
3 = fast recovery
5
-
N = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
trr code (see Recovery Characteristics table)
8
-
P = stud base DO-9 (DO-205AB) 3/4" 16UNF-2A
M = stud base DO-9 (DO-205AB) M16 x 1.5
9
-7
B = flag top terminals (for cathode / anode leads)
S = isolated lead with silicon sleeve
(red = reverse polarity; blue = normal polarity)
None = not isolated lead
10
-
C = ceramic housing (over 1600 V)
V = glass-metal seal (only up to 1600 V)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95301
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Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9)
DIMENSIONS in millimeters (inches)
Ceramic housing
19 (0.75)
MAX.
4 (0.16)
MAX.
39 (1.53)
MAX.
9.5 (0.37) MIN.
DIA. 8.5 (0.33) NOM.
C.S. 35 mm2
(0.054 s.i.)
210 (8.27)
± 10 (0.39)
DIA. 27.5
(1.08) MAX.
82 (3.23)
MIN.
SW 32
16 (0.63)
MAX.
21 (0.82)
MAX.
3/4"-16UNF-2A*
Document Number: 95301
Revision: 09-Apr-08
*For metric device: M16 x 1.5
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