VS-SD2500C..K Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Hockey PUK Version), 3000 A
FEATURES
• Wide current range
• High voltage ratings up to 2500 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style K-PUK (DO-200AC)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
K-PUK (DO-200AC)
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
3000 A
Package
K-PUK (DO-200AC)
Circuit configuration
Single
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
Ths
IFSM
I2t
VRRM
VALUES
UNITS
3000
A
55
°C
5000
A
25
°C
50 Hz
31 000
60 Hz
32 460
50 Hz
4810
60 Hz
4390
Range
1200 to 2500
V
-40 to +180
°C
IRRM MAXIMUM
AT TJ = 180 °C
mA
TJ
A
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD2500C..K
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
12
1200
1300
16
1600
1700
20
2000
2100
24
2400
2500
25
2500
2600
75
Revision: 11-Jan-18
Document Number: 93542
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VS-SD2500C..K Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
IF(AV)
Maximum RMS forward current
IF(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
Maximum
I2t
for fusing
No voltage
reapplied
A
°C
5000
31 000
No voltage
reapplied
100 % VRRM
reapplied
UNITS
55 (85)
A
32 460
26 050
Sinusoidal half wave,
initial TJ = TJ
maximum
27 300
4810
4390
100 % VRRM
reapplied
3100
t = 0.1 to 10 ms, no voltage reapplied
48 100
t = 10 ms
t = 8.3 ms
I2t
VALUES
3000 (1550)
3400
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.76
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.97
kA2s
kA2s
V
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.16
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.13
VFM
Ipk = 4000 A, TJ = TJ maximum
tp = 10 ms sinusoidal wave
1.41
V
VALUES
UNITS
mW
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TEST CONDITIONS
TJ
-40 to +180
TStg
-55 to +200
RthJ-hs
DC operation single side cooled
0.042
DC operation double side cooled
0.020
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
°C
K/W
22 250 (2250)
N (kg)
425
g
K-PUK (DO-200AC)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.002
0.002
0.001
0.001
120°
0.002
0.002
0.002
0.002
90°
0.003
0.003
0.003
0.003
60°
0.004
0.004
0.004
0.004
30°
0.007
0.007
0.007
0.007
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93542
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VS-SD2500C..K Series
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180
S D 2 5 0 0 C ..K S e rie s
(S in g le S id e C o o le d )
R thJ- hs (D C ) = 0 .0 4 2 K / W
160
140
120
C o ndu ctio n An gle
100
80
3 0°
6 0°
60
90 °
1 2 0°
1 8 0°
40
0
40 0
800
1 2 00
1 6 00
2 00 0
M aximum Allow able Heat sink Temperature (°C)
M a xim u m A llo w a b le H e a t sin k Te m p e ra t u re (°C )
180
Vishay Semiconductors
SD2500C..K Series
(D ouble Side Cooled)
R th J- hs (DC) = 0.020 K/W
160
140
120
C o nduc tio n Pe rio d
100
80
60
90°
40
2000
3000
20
0
1000
4000
5000
6000
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
7000
SD2500C..K Series
(Single Side Cooled )
R th J- hs (DC) = 0.042 K/W
160
140
120
C o ndu ctio n Pe rio d
100
80
30°
60
60°
90°
40
120°
180°
DC
20
0
500
1000
1500
2000
2500
3000
Maximum Average Forward Power Loss (W )
180
Maximum Allowable Heatsink Tem perature (°C)
120°
180° DC
30°
A v e ra g e Fo rw a rd C urre n t (A )
180°
120°
90°
60°
30°
6000
5000
4000
2000
C o nd uc tio n An g le
SD2500C..K Series
TJ = 180°C
1000
0
0
500 1000 1500 2000 2500 3000 3500
Average Forw ard Current (A)
SD 2500C..K Series
(Double Side Cooled)
R th J- hs (DC) = 0.020 K/W
160
140
120
C o nd uct io n A ng le
100
80
60
40
60°
90°
120°
30°
180°
20
0
500 1000 1500 2000 2500 3000 3500
Average Forward Curren t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
8000
Maxim um Average Forward Power Loss (W )
Fig. 2 - Current Ratings Characteristics
180
RMS Limit
3000
Average Forward Current (A)
Maxim um Allowable Heatsin k Tem perature (°C)
60°
DC
180°
120°
90°
60°
30°
7000
6000
5000
RM S Lim it
4000
3000
C o ndu ct io n Pe rio d
2000
SD2500C..K Series
TJ = 180°C
1000
0
0
1000
2000 3000
4000
5000 6000
Average Forward Curren t (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93542
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD2500C..K Series
www.vishay.com
35000
At Any Rated Load Condition And W ith
Rated V R RMApplied Following Surge.
Init ial TJ = 180 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
26000
24000
Peak Half Sin e W ave Forward Curren t (A)
Peak Half Sine W ave Forward Current (A)
28000
Vishay Semiconductors
22000
20000
18000
SD2500C..K Series
16000
1
10
30000
25000
Maxim um Non Rep etitive Surge Current
Versus Pulse Train Duration.
Initial T J = 180°C
No V oltage Reapplied
Rated VRR M Reapplied
20000
15000
10000
SD2500C..K Series
5000
0 .0 1
100
0 .1
1
Pulse Train Duration (s)
Nu m be r O f E qua l A m p litude H alf C y cle C urre nt P ulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
In stantan eous Forward Current (A)
10000
TJ = 25°C
1000
TJ = 180°C
SD2500C..K Series
100
0.5
0. 9
1.3
1.7
2.1
2. 5
Instantan eous Forward Voltage (V)
Fig. 9 - Forward Voltage Drop Characteristics
T ra n sie n t Th e rm al Im pe d a n c e Z thJ-hs ( K/ W )
0 .1
S te a dy St a t e V a lu e
R thJ-hs = 0 .0 4 2 K / W
( S in g le S id e C o o le d )
0 .0 1
R th J-hs = 0 .0 2 0 K / W
( D o ub le S id e C o o le d )
( D C O p e rat io n )
0. 001
0 .0 0 0 1
0 .0 0 1
SD 2 5 0 0 C ..K S e r ie s
0 .0 1
0 .1
1
10
1 00
Sq u a re W av e Pu lse D u rat io n ( s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 11-Jan-18
Document Number: 93542
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD2500C..K Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
SD
250
0
C
25
K
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = standard recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
K = PUK case K-PUK (DO-200AC)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95247
Revision: 11-Jan-18
Document Number: 93542
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
K-PUK (DO-200AC)
DIMENSIONS in millimeters (inches)
74.5 (2.93) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
1 (0.04) MIN.
both ends
47.5 (1.87) DIA. MAX.
2 places
27.5 (1.08) MAX.
C
A
67 (2.64) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 12-Jul-17
Document Number: 95247
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