VS-SD263C45S50L

VS-SD263C..S50L Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 375 A FEATURES • High power fast recovery diode series • 4.5 μs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC® B-PUK (DO-200AB) B-PUK (DO-200AB) • Maximum junction temperature 125 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 375 A Package B-PUK (DO-200AB) Circuit configuration Single TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) Ths IF(RMS) VALUES UNITS 375 A 55 °C 408 IFSM VRRM trr A 50 Hz 5500 60 Hz 5760 Range 3000 to 4500 V 4.5 μs TJ 125 -40 to +125 TJ °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD263C..S50L VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 Revision: 11-Jan-18 Document Number: 93173 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD263C..S50L Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at heatsink temperature IF(AV) Maximum RMS forward current IF(RMS) Maximum peak, one-cycle forward, non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms No voltage t = 8.3 ms reapplied t = 10 ms 50 % VRRM Sinusoidal half wave, t = 8.3 ms reapplied initial TJ = TJ t = 10 ms No voltage maximum t = 8.3 ms reapplied t = 10 ms 50 % VRRM t = 8.3 ms reapplied t = 0.1 to 10 ms, no voltage reapplied (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave VALUES 375 (150) 55 (85) 725 5500 5760 4630 4850 151 138 107 98 1510 1.56 1.71 1.64 1.53 UNITS A °C 3.20 V A kA2s kA2s V mW RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (μs) S50 TYPICAL VALUES AT TJ = 150 °C TEST CONDITIONS 5.0 IFM Ipk SQUARE PULSE (A) dI/dt (1) (A/μs) 1000 100 Vr (V) trr AT 25 % IRRM (μs) - 50 4.5 Qrr (μC) Irr (A) trr t dir dt 680 240 Qrr IRM(REC) Note (1) dI/dt = 25 A/μs, T = 25 °C J THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating  temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL VALUES TJ UNITS -40 to 125 TStg RthJ-hs Mounting force, ± 10 % Approximate weight Case style TEST CONDITIONS DC operation single side cooled DC operation double side cooled See dimensions - link at the end of datasheet °C -40 to 150 0.11 K/W 0.05 9800 (1000) N (kg) 230 g B-PUK (DO-200AB) RthJ-hs CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE 0.012 0.011 0.014 0.015 0.018 0.018 0.026 0.027 0.045 0.046 RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 0.008 0.008 0.014 0.014 0.019 0.019 0.027 0.028 0.046 0.046 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93173 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD263C..S50L Series www.vishay.com 130 SD263C..S50L Series (Sin gle Side Cooled) R t hJ-hs (DC) = 0.11 K/W 120 110 100 90 80 C o nduc tio n A ng le 70 60 50 40 30 60° 90° 120° 30° 20 180° 10 0 50 100 150 200 250 300 Maxim um Allowable Heatsin k Tem perature (°C) Maxim um Allowable Heatsin k Tem perature ( °C) 130 Vishay Semiconductors SD263C..S50L Series (D ouble Side Cooled) R thJ-hs (DC) = 0.05 K/W 120 110 100 90 80 C o nd uc tio n Pe rio d 70 30° 60 90° 120° 40 180° 30 20 DC 10 0 Average Forward Curren t (A) 400 600 800 Fig. 4 - Current Ratings Characteristics 1600 13 0 S D 2 6 3 C ..S 5 0 L Se rie s ( Sin g le S id e C o o le d ) R th J-hs (D C ) = 0 .1 1 K / W 12 0 11 0 Maxim um Average Forward Power Loss (W ) M a x im um A llo w a b le H e a t sin k T e m pe ra t u re ( °C ) 200 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 10 0 90 80 C on du ctio n Pe rio d 70 60 50 3 0° 60 ° 40 30 90° 1 2 0° 20 DC 1 8 0° 10 0 1400 180° 120° 90° 60° 30° 1200 1000 600 Co n duc tio n An gle 400 SD263C..S50L Series TJ = 125°C 200 0 0 50 1 0 0 15 0 20 0 2 5 0 3 0 0 3 5 0 40 0 45 0 M a xim u m A v e ra ge Fo rw a rd P o w e r L os s (W ) C o ndu c tio n A ng le 70 60 30° 50 6 0° 9 0° 1 2 0° 40 1 8 0° 30 20 10 0 100 20 0 30 0 300 400 500 2 2 50 10 0 90 80 200 Fig. 5 - Forward Power Loss Characteristics SD 2 6 3 C ..S 5 0 L S e rie s (D o ub le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 5 K / W 12 0 11 0 100 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics 13 0 RM S Lim it 800 A v e ra g e F o rw a rd C u rr e n t (A ) M a x im um A llo w a b le H e a t sin k Te m p e ra t u re (°C ) 60° 50 4 00 A v e r a g e Fo rw a rd C u rre n t (A ) Fig. 3 - Current Ratings Characteristics 5 00 DC 1 8 0° 1 2 0° 9 0° 6 0° 3 0° 2 0 00 1 7 50 1 5 00 1 2 50 R M S Lim it 1 0 00 7 50 C o ndu ctio n Pe rio d 5 00 S D 2 6 3 C ..S 5 0 L Se rie s T J = 1 2 5° C 2 50 0 0 10 0 2 00 3 00 40 0 50 0 60 0 7 00 80 0 A v e ra g e F o rw a r d C u rre n t (A ) Fig. 6 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93173 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD263C..S50L Series www.vishay.com Vishay Semiconductors 10000 A t A n y R a t e d Lo a d C o n d itio n A n d W ith 5 0 0 0 5 0 % R a te d V R RM A p p lie d F o llo w in g S u rg e In it ia l TJ = 1 2 5 °C 45 0 0 @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 40 0 0 Instantaneous Forward Current (A) P e a k Ha lf Sin e W a v e Fo rw a rd C u rre n t ( A ) 55 0 0 35 0 0 30 0 0 25 0 0 20 0 0 15 0 0 S D 2 6 3 C ..S5 0 L S e r ie s TJ = 25°C TJ = 125°C 1000 SD263C..S50L Series 100 10 0 0 1 10 1 1 00 2 N um b er O f E qua l A m p litude H alf C yc le C urren t Pulse s (N ) T ra n sie n t Th e rm a l Im pe d a n c e Z thJ-hs ( K / W ) Peak Half Sin e W ave Forward Curren t (A) 4000 3000 2000 S D 2 6 3 C ..S5 0L Se rie s 1000 0.01 0.1 5 6 7 8 1 M a xim u m N o n R e pe tit iv e Su rg e C u rre n t V e r su s P ulse Tr ain D ura tio n . In itial TJ = 1 2 5°C N o V o lt ag e R e a pp lie d 5 0 % R at e d V RR M Re ap plie d 5000 4 Fig. 9 - Forward Voltage Drop Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6000 3 Instantan eous Forw ard Voltage (V ) 1 S t e a d y St a t e V alu e R th J- hs = 0 .1 1 K/ W (S in gle Sid e C o o le d ) 0 .1 R th J- hs = 0 .0 5 K/ W ( D o u b le S id e C o o le d ) ( D C O p e ra t io n ) 0 .0 1 S D 2 6 3 C ..S5 0 L Se rie s 0 .0 0 1 0 .0 0 1 Pulse Train Duration (s) 0 .0 1 0 .1 1 10 Sq u a r e W a v e P u lse D u rat io n ( s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristic Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 500 450 V FP I Fo rw a rd R ec o v e ry (V ) 400 TJ = 1 2 5°C 350 300 250 TJ = 2 5°C 200 150 100 SD 2 6 3 C ..S 5 0 L Se rie s 50 0 0 2 00 4 00 6 00 80 0 1 00 0 1 20 0 1 40 0 1 600 18 00 2 0 00 R a t e O f R ise O f Fo rw a rd C u rre n t - d i/ d t (A / u s) Fig. 11 - Typical Forward Recovery Characteristics Revision: 11-Jan-18 Document Number: 93173 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD263C..S50L Series www.vishay.com Vishay Semiconductors 1E4 S D 2 6 3 C ..S 5 0 L Se rie s TJ = 1 2 5 °C ; V r > 1 0 0 V 8 7 I FM = 100 0 A Sine Pu lse 6 50 0 A 5 10 jo ule s pe r pu lse Peak Forward Current (A) M a x im um R e v e rse R e c o v e r y Tim e - Trr (µ s) 9 1 50 A 4 6 4 2 1 0 .5 1E3 0 .3 SD 2 6 3 C..S5 0 L Se rie s Si nu so ida l Pu lse TJ = 1 2 5°C , V RRM = 1 5 0 0 V d v /d t = 1 0 0 0 V/ µs 3 tp 2 10 10 0 1E2 1E 1 10 0 0 1E2 Fig. 12 - Recovery Time Characteristics 1E4 I FM = 1 00 0 A Sin e Pulse 1 20 0 1 00 0 500 A 8 00 150 A 6 00 4 00 Peak Forward Current (A) M a x im u m Re v e r se R e c o v e r y C h a r ge - Q rr (µ C ) 1E4 Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics 1 40 0 1 5 00 1 00 0 4 00 2 0 00 1E3 4000 6 00 0 SD 2 6 3 C ..S 5 0 L Se rie s TJ = 1 2 5 ° C ; V r > 1 0 0 V 2 00 50 1 00 5 0 Hz SD 2 6 3 C ..S5 0 L Se rie s Si nu so id al Pu l se TC = 5 5° C , V RR M= 1 5 0 0 V d v / dt = 1 0 0 0 V/ u s tp 10000 1E2 1E 1 0 0 200 3000 10 0 1 50 2 00 2 50 30 0 1E2 1E3 1E 4 Pulse Basew idth (µs) R ate O f Fall O f Fo rwa rd Curre nt - d i/dt ( A/µs) Fig. 13 - Recovery Charge Characteristics Fig. 16 - Frequency Characteristics 1E4 60 0 SD 2 6 3 C ..S5 0 L Se r ie s T rap ezo id al P uls e TJ = 1 2 5°C , V RRM = 1 5 0 0 V d v / dt = 1 0 0 0 V /µ s d i/ d t = 3 0 0 A /µ s I FM = 10 00 A Sine Pu lse 50 0 500 A 40 0 1 50 A 30 0 20 0 S D 2 6 3 C ..S5 0 L S e r ie s TJ = 1 2 5 °C ; V r > 1 0 0 V 10 0 0 0 50 1 00 15 0 20 0 2 50 3 0 0 Rate O f Fall O f Fo rw ard C urre nt - d i/dt (A /µs) Fig. 14 - Recovery Current Characteristics Peak Forward Current (A) M a xim u m Re v e rse R e c o v e ry C urre n t - Irr (A ) 1E3 Pulse Basew idth ( µs) Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs) tp 1 0 jo ule s pe r pu lse 4 1E3 6 2 1 0. 5 0.3 1E2 1E1 1E 2 1E3 1E4 Pulse Basew idth (µs) Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Revision: 11-Jan-18 Document Number: 93173 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD263C..S50L Series www.vishay.com Vishay Semiconductors 1E 4 1E4 1 00 1E 3 600 400 Peak Forward Curren t (A) Peak Forward Current (A) tp 50 Hz 20 0 1 00 0 1500 20 0 0 3000 4 00 0 1E 2 1E1 1E 2 SD 2 6 3 C ..S5 0 L Se rie s Tr ape zo i dal Pu ls e TC = 5 5°C, V RRM = 15 00 V d v / dt = 10 0 0V / us , d i/ d t = 3 0 0 A / us 1E 3 SD 2 6 3 C ..S5 0 L S eri es T rape z oi dal Pu lse TJ = 1 2 5°C , V RRM = 1 5 0 0 V dv / d t = 1 0 0 0 V/ µ s di /d t = 1 0 0 A / µ s tp 1 0 jo u le s pe r pu lse 6 4 1E3 2 1 0. 5 0.3 1E2 1E1 1E4 1E 2 1E3 1E4 Pulse Basew idth (µs) Pulse Basewidth ( µs) Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 18 - Frequency Characteristics 1E 4 Peak Forward Current (A) tp 1E 3 1000 60 0 4 00 20 0 10 0 50 Hz 1 5 00 2 00 0 3 00 0 SD 2 6 3 C.. S5 0 L Se rie s T rap e zoi da l Pul se TC = 5 5°C , V RRM = 1 5 0 0 V dv / dt = 1 0 0 0 V/ u s, di /d t = 1 0 0 A / u s 4000 6 0 00 1E 2 1E1 1E 2 1E 3 1E4 Pulse Basew idth (µs) Fig. 20 - Frequency Characteristics ORDERING INFORMATION TABLE Device code VS- SD 26 3 C 45 S50 L 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 3 = fast recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - trr code 8 - L = PUK case B-PUK (DO-200AB) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95246 Revision: 11-Jan-18 Document Number: 93173 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors B-PUK (DO-200AB) DIMENSIONS in millimeters (inches) 58.5 (2.30) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 0.8 (0.03) both ends 34 (1.34) DIA. MAX. 2 places 25.4 (1) 26.9 (1.06) C A 53 (2.09) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95246 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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