VS-SD300C32C

VS-SD300C..C Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Hockey PUK Version), 650 A FEATURES • Wide current range • High voltage ratings up to 3200 V • High surge current capabilities • Diffused junction • Hockey PUK version • Case style A-PUK (DO-200AA) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 A-PUK (DO-200AA) TYPICAL APPLICATIONS • Converters PRIMARY CHARACTERISTICS • Power supplies IF(AV) 650 A Package A-PUK (DO-200AA) Circuit configuration Single • Machine tool controls • High power drives • Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) SD300C..C 25 to 32 650 540 A 55 55 °C 1150 995 A 25 25 °C 50 Hz 6050 6050 60 Hz 6335 6335 50 Hz 183 183 60 Hz 167 167 Range 400 to 2000 2500 to 3200 V -40 to +180 -40 to +150 °C Ths IF(RMS) Ths IFSM I2t VRRM UNITS 04 to 20 TJ A kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD300C..C VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 25 2500 2600 28 2800 2900 32 3200 3300 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 15 Revision: 11-Jan-18 Document Number: 93544 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300C..C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at heatsink temperature Maximum RMS forward current 995 6050 I2t t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied A 55 (85) 6050 t = 10 ms Maximum I2t for fusing 55 (85) 1150 t = 10 ms UNITS 650 (380) 540 (250) t = 10 ms t = 8.3 ms I2t 25 to 32 25 °C heatsink temperature double side cooled t = 8.3 ms IFSM Maximum I2t for fusing 04 to 20 180° conduction, half sine wave Double side (single side) cooled IF(AV) IF(RMS) Maximum peak, one-cycle forward,  non-repetitive surge current SD300C..C TEST CONDITIONS 6335 6335 5090 5090 5330 5330 183 183 167 167 129 129 118 118 1830 1830 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.95 0.95 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 1.00 1.00 Low level values of forward  slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.75 0.75 High level values of forward  slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 0.72 0.72 VFM Ipk = 1500 A, TJ = TJ maximum;  tp = 10 ms sinusoidal wave 2.08 2.08 °C A kA2s kA2s V mW Maximum forward voltage drop V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SD300C..C TEST CONDITIONS 04 to 20 25 to 32 TJ -40 to 180 -40 to 150 TStg -55 to 200 RthJ-hs DC operation single side cooled 0.163 DC operation double side cooled 0.073 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet UNITS °C K/W 4900 (500) N (kg) 70 g A-PUK (DO-200AA) RthJ-hs CONDUCTION CONDUCTION ANGLE 180° SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 0.017 0.017 0.011 0.012 120° 0.020 0.020 0.020 0.020 90° 0.025 0.025 0.027 0.027 60° 0.036 0.036 0.038 0.038 30° 0.064 0.062 0.065 0.062 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93544 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300C..C Series www.vishay.com SD 3 0 0 C ..C Se rie s (4 0 0 V t o 2 0 0 0 V ) (S in g le Sid e C o o le d ) R th J-hs (D C ) = 0 .1 6 3 K /W 160 140 120 C o nduc tio n A ng le 100 3 0° 80 60° 90° 120 ° 60 1 80° 40 0 5 0 1 0 0 1 5 0 20 0 25 0 3 00 35 0 4 0 0 4 50 M a x im u m A llo w a b le H e a t sin k T em p e ra t u re (° C ) 1 80 180 M a xim u m A llo w a ble H e a ts in k T e m p e r a tu re (°C ) Vishay Semiconductors S D 3 0 0 C ..C S e r ie s (4 0 0 V t o 2 0 0 0 V ) (D o u b le S id e C o o le d ) R thJ-h s (D C ) = 0 .0 7 3 K /W 1 60 1 40 1 20 Co n duc tio n Pe rio d 1 00 80 30 ° 60° 60 90 ° 120 ° 40 DC 20 0 20 0 40 0 6 00 8 00 1 00 0 1 20 0 A v e ra g e F o rw a rd C u rr e n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 18 0 150 SD 3 0 0 C ..C Se rie s (4 0 0 V t o 2 0 0 0 V ) ( Sin g le S id e C o o le d ) R thJ-h s (D C ) = 0 .1 6 3 K / W 16 0 14 0 12 0 C o ndu ctio n Pe riod 10 0 80 60 30 ° 60° 90 ° 40 1 2 0° 1 8 0° 20 0 100 200 3 00 40 0 DC 500 60 0 70 0 Maxim um Allowable Heatsink Tem perature (°C) M a xim u m A llo w a b le H e a tsin k T e m p e r a tu re (°C ) A v e ra g e F o r w a rd C u rre n t (A ) SD 300C..C Series (2500V to 3200V) (Single Side Cooled ) R thJ- hs (DC) = 0.163 K/W 140 130 120 110 100 Co n duc tio n A ng le 90 80 30° 60° 70 90° 60 120° 180° 50 40 0 A v e ra g e F o rw a rd C urr e n t (A ) 50 100 150 200 250 300 350 400 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics 180 150 140 130 120 110 100 90 80 70 60 50 40 30 20 SD 300C..C Series (400V to 2000V ) (Double Side Cooled) R thJ-h s (DC) = 0.073 K/W 160 140 120 100 Co n duc tio n An g le 80 30° 60° 90° 60 120° 180° 40 20 0 200 400 600 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics 800 Maxim um Allowable Heatsink Tem perature (°C) Maximum Allowable Heatsink Temperature (°C) 180 ° SD300C..C Series (2500V to 3200V ) ( Single Side Cooled) Rth J-hs (DC) = 0.163 K/W C o nd uct io n P erio d 90° 30° 0 100 60° 200 120° 300 180° DC 400 500 600 Average Forward Current (A) Fig. 6 - Current Ratings Characteristics Revision: 11-Jan-18 Document Number: 93544 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300C..C Series Vishay Semiconductors 25 0 0 150 140 130 120 110 100 90 80 70 60 50 40 30 20 SD300C..C Series (2500V to 3200V) (Double Side Cooled) Rth J-h s (DC) = 0.073 K/W C o nduc tio n A ng le 30° 60° 90° 120° 180° 0 100 200 300 400 500 600 M a x im um A v e ra g e F o rw a rd Po w e r Lo ss (W ) Maximum Allow able Heatsin k Tem perature (°C) www.vishay.com DC 1 8 0° 1 2 0° 90° 60° 30° 20 0 0 15 0 0 R M S Lim it 10 0 0 C o nduc tio n Pe rio d 500 S D 3 0 0 C ..C S e r ie s TJ = TJ m a x . 0 0 700 200 Average Forward Current ( A) 60 0 0 SD 3 0 0 C ..C S e rie s (2 5 0 0 V t o 3 2 0 0 V ) (D o u b le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K / W C o ndu ct io n Pe rio d 30° 60° 9 0° 120 ° 1 8 0° DC 0 20 0 400 60 0 800 1 0 00 Fig. 8 - Current Ratings Characteristics 1200 RMS Lim it 1000 800 600 C o nd uctio n A ng le 400 SD300C..C Series TJ = TJ m ax. 200 0 0 200 400 600 1 20 0 45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 S D 3 0 0 C ..C S e rie s 15 0 0 10 100 Fig. 11 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 800 Average Forward Curren t (A) Fig. 9 - Forward Power Loss Characteristics P e a k H a lf Sin e W a v e Fo rw a rd C urr e n t (A ) M aximum Average Forward Power L oss (W) 50 0 0 7000 1400 1 0 00 A t A n y R a te d Lo a d C o n d it io n A n d W ith R a t e d V RR MA p p lie d Fo llo w in g Su rg e . In it ia l TJ = TJ m a x. @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 55 0 0 1 1800 180° 120° 90° 60° 30° 8 00 N um be r O f E qual A m plitud e Half C y cle Cu rren t Pulse s (N ) A v e ra g e F o rw a rd C u rre n t (A ) 1600 600 Fig. 10 - Forward Power Loss Characteristics P e a k H a lf S in e W a v e Fo rw a rd C u rre n t (A ) M a x im um A llo w a b le H e a t sin k T e m p e ra tu re (°C ) Fig. 7 - Current Ratings Characteristics 150 140 130 120 110 100 90 80 70 60 50 40 30 20 40 0 A v e ra g e F o rw a rd C u rre n t (A ) 6000 5000 M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e rsu s P u lse T ra in D ura t io n . In it ia l TJ = TJ m a x . N o V o lt a g e R e a pp lie d R a t e d V RRMR e a p p lie d 4000 3000 2000 SD 3 0 0 C ..C S e rie s 1000 0.01 0.1 1 P u lse T ra in D u ra t io n (s) Fig. 12 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Revision: 11-Jan-18 Document Number: 93544 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD300C..C Series www.vishay.com Vishay Semiconductors In stant aneous Forward Current (A) 10000 TJ = 25°C TJ = TJ m ax. 1000 SD300C..C Series 100 0.5 1 1.5 2 2.5 3 3. 5 4 4.5 5 Instantaneous Forwa rd V oltag e (V) Fig. 13 - Forward Voltage Drop Characteristics Tra n sie n t T h e rm a l Im p e d a n c e Z th J-hs (K / W ) 1 St e a d y St at e V a lue R thJ-hs = 0 .1 6 3 K /W ( Sing le Sid e C o o le d ) 0 .1 R thJ-hs = 0 .0 7 3 K /W ( D o u ble Sid e C o o le d ) ( D C O p e ra t io n ) 0 .0 1 SD 3 0 0 C ..C Se rie s 0 .0 0 1 0.0 01 0 .01 0. 1 1 10 Sq u a re W a v e Pu lse D u rat io n ( s) Fig. 14 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- SD 30 0 C 32 C 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 0 = standard recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case A-PUK (DO-200AA) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95248 Revision: 11-Jan-18 Document Number: 93544 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-200AA 42 (1.65) DIA. MAX. DIMENSIONS in millimeters (inches) 3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 19 (0.75) DIA. MAX. 2 places 0.3 (0.01) MIN. both ends 13.7 (0.54) 14.4 (0.57) C A 38 (1.50) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 17-Apr-2019 Document Number: 95248 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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