VS-SD300N/R Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 380 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC® types
• Compression bonded encapsulations
DO-9 (DO-205AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
380 A
Package
DO-9 (DO-205AB)
Circuit configuration
Single
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
VS-SD300N/R
TEST CONDITIONS
I2t
VRRM
25 to 32
UNITS
380
380
A
TC
100
70
°C
595
425
50 Hz
6050
6050
60 Hz
6335
6335
50 Hz
183
183
60 Hz
167
167
Range
1600 to 2000
2500 to 3200
V
-40 to +180
-40 to +150
°C
IF(RMS)
IFSM
16 to 20
TJ
A
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD300N/R
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
16
1600
1700
20
2000
2100
25
2500
2600
28
2800
2900
32
3200
3300
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
Revision: 28-Apr-2020
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VS-SD300N/R Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum RMS forward current
IF(RMS)
180° conduction, half sine wave
DC at TC = 88 °C (02 to 24), TC = 91 °C (25 to 32)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
I2√t
25 to 32
380
270
A
100
100
°C
300
380
A
125
70
°C
595
No voltage
reapplied
425
6050
No voltage
reapplied
100 % VRRM
reapplied
A
6335
5090
Sinusoidal half wave,
initial
TJ = TJ maximum
5330
183
167
129
t = 0.1 to 10 ms, no voltage reapplied
1830
0.95
kA2s
118
Low level value of threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ = TJ maximum
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
1.05
Low level value of forward slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ = TJ maximum
0.75
High level value of forward slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.66
VFM
Ipk = 1180 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
Maximum forward voltage drop
UNITS
16 to 20
100 % VRRM
reapplied
t = 8.3 ms
Maximum I2√t for fusing
SD300N/R
TEST CONDITIONS
1.83
kA2√s
V
mΩ
1.83
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
SD300N/R
TEST CONDITIONS
16 to 20
UNITS
25 to 32
TJ
-40 to 180 -40 to 150
Maximum storage temperature range
TStg
-55 to 200
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.11
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat, and greased
0.04
°C
K/W
Maximum allowed
mounting torque ± 10 %
Not-lubricated threads
Approximate weight
Case style
See dimensions (link at the end of datasheet)
27
Nm
250
g
DO-9 (DO-205AB)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.019
0.013
120°
0.023
0.023
90°
0.028
0.030
60°
0.042
0.044
30°
0.073
0.074
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 28-Apr-2020
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VS-SD300N/R Series
180
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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SD300N/ RSeries(1600V to 2000V)
RthJC (DC) = 0.11 K/ W
170
160
150
Conduction Angle
140
130
30°
60°
120
90°
120°
110
180°
100
90
80
0
50 100 150 200 250 300 350 400
150
SD300N/ R Series (2500V to 3200V)
RthJC (DC) = 0.11 K/ W
140
130
Conduction Angle
120
110
100
120°
180°
90
0
Average Forward Current (A)
50
100
150
200
250
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
180
150
SD300N/ RSeries(1600V to 2000V)
RthJC (DC) = 0.11 K/ W
170
160
150
140
Conduction Period
130
120
110
100
90
30°
90°
60° 120°
180°
DC
80
0
100
200 300
400
500
600
700
SD300N/ R Series (2500V to 3200V)
RthJC (DC) = 0.11 K/ W
140
130
Conduction Period
120
110
30°
100
60°
90°
120°
90
180°
DC
300
400
80
0
100
200
500
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
700
=
3
0.0
W
K/
K/
W
SA
W
K/
0.2
K/
W
a
R
RMSLimit
400
elt
-D
500
0.
1
R th
180°
120°
90°
60°
30°
600
06
0.
Maximum Average Forward Power Loss(W)
300
Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
90°
60°
30°
0.4
K/ W
300
Conduc tion Angle
0.6 K
/
SD300N/ R Series
(1600V to 2000V)
TJ = 180°C
0.8 K/
W
200
100
W
2 K/ W
0
0
50 100 150 200 250 300 350 400
20 40
Average Forward Current (A)
60
80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Revision: 28-Apr-2020
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VS-SD300N/R Series
Vishay Semiconductors
900
R
DC
180°
120°
90°
60°
30°
700
600
SA
800
th
Maximum Average Forward Power Loss (W)
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0.
06
0.1
500
0.2
RMSLimit
400
Conduction Period
300
200
100
0.
03
K/
W
K/
W
-D
el
ta
R
K/ W
0.4
K/
0.6 K
/
SD300N/ R Series
(1600V to 2000V)
TJ = 180°C
=
K/
W
W
W
0.8 K/
W
2 K/ W
0
0
100
200
300
400
500
600
20 40
60
80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
700
Rt
180°
120°
90°
60°
30°
0.
06
02
0.
K/
W
0.1
K/
W
-D
ta
el
R
RMSLimit
W
K/
500
=
600
A
hS
Maximum Average Forward Pow er Loss (W)
Fig. 6 - Forward Power Loss Characteristics
400
0.2
K/ W
300
0.4
K/ W
Conduction Angle
200
SD300N/ R Series
(2500V to 3200V)
TJ = 150°C
100
0.8 K
/
W
1.8 K/ W
0
0
25
50 100 150 200 250 300 350 400
Average Forward Current (A)
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
900
DC
180°
120°
90°
60°
30°
800
700
600
R
SA
th
Maximum Average Forward Pow er Loss (W)
Fig. 7 - Forward Power Loss Characteristics
500
RMS Limit
400
=
0.0
6K
/W
0.1
K/
W
SD300N/ R Series
(2500V to 3200V)
TJ = 150°C
200
100
K/
W
-D
el
ta
R
0.2
K/ W
Conduction Period
300
0.
02
0.4 K
/W
0.8 K
/
W
1.8 K/ W
0
0
100
200
300
400
500
Average Forward Current (A)
25
600
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
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Document Number: 93545
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VS-SD300N/R Series
5500
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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At Any Rated Load Condition And With
Rated VRRMApplied Following Surge.
Initial TJ = TJ max.
@60 Hz 0.0083 s
@50 Hz 0.0100 s
5000
4500
4000
3500
3000
2500
2000
SD300N/ R Series
1500
1
10
100
6500
6000
5500
5000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = TJ max.
No Voltage Reapplied
Rated VRRM Reapplied
4500
4000
3500
3000
2500
2000
1500
SD300N/ R Series
1000
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10000
TJ = 25°C
1000
TJ = TJ max.
SD300N/ R Series
100
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Transient Thermal Impedance Z thJC (K/ W)
Fig. 11 - Forward Voltage Drop Characteristics
1
0.1
Steady State Value:
RthJC = 0.11 K/ W
(DC Operation)
0.01
SD300N/ R Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 12 - Thermal Impedance ZthJC Characteristics
Revision: 28-Apr-2020
Document Number: 93545
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-SD300N/R Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
SD
30
0
N
32
P
C
1
2
3
4
5
6
7
8
1
-
Vishay semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = standard recovery
5
-
N = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = stud base DO-9 (DO-205AB) 3/4" 16UNF-2A
8
-
C = ceramic housing
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95301
Revision: 28-Apr-2020
Document Number: 93545
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Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9)
DIMENSIONS in millimeters (inches)
Ceramic housing
19 (0.75)
MAX.
4 (0.16)
MAX.
39 (1.53)
MAX.
9.5 (0.37) MIN.
DIA. 8.5 (0.33) NOM.
C.S. 35 mm2
(0.054 s.i.)
210 (8.27)
± 10 (0.39)
DIA. 27.5
(1.08) MAX.
82 (3.23)
MIN.
SW 32
16 (0.63)
MAX.
21 (0.82)
MAX.
3/4"-16UNF-2A*
Document Number: 95301
Revision: 09-Apr-08
*For metric device: M16 x 1.5
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Document Number: 91000