VS-SD303C..C Series
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Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 350 A
FEATURES
•
•
•
•
•
•
•
•
•
•
•
A-PUK (DO-200AA)
PRIMARY CHARACTERISTICS
High power fast recovery diode series
1.0 μs to 2.0 μs recovery time
High voltage ratings up to 2500 V
High current capability
Optimized turn-on and turn-off characteristics
Low forward recovery
Fast and soft reverse recovery
Press PUK encapsulation
Case style conform to JEDEC® A-PUK (DO-200AA)
Maximum junction temperature 125 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
IF(AV)
350 A
Package
A-PUK (DO-200AA)
Circuit configuration
Single
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
VS-SD303C..C
TEST CONDITIONS
IF(AV)
S15
S20
350
350
350
A
55
55
55
°C
550
550
550
A
25
25
25
°C
50 Hz
5770
5770
5770
60 Hz
6040
6040
6040
50 Hz
166
166
166
60 Hz
152
152
152
Range
400 to 1000
1200 to 1600
2000 to 2500
V
1.0
1.5
2.0
μs
Ths
IF(RMS)
Ths
IFSM
I2t
VRRM
trr
UNITS
S10
TJ
TJ
25
25
25
-40 to +125
-40 to +125
-40 to +125
A
kA2s
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD303C..S10C
VS-SD303C..S15C
VS-SD303C..S20C
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
20
2000
2100
25
2500
2600
IRRM MAXIMUM
AT TJ = 125 °C
mA
35
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
Maximum RMS current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle ,
non-repetitive forward current
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
No voltage
reapplied
UNITS
A
55 (75)
°C
550
5770
No voltage
reapplied
100 % VRRM
reapplied
VALUES
350 (175)
4850
Sinusoidal half wave,
initial TJ = TJ
maximum
5080
166
152
100 % VRRM
reapplied
107
t = 0.1 to 10 ms, no voltage reapplied
1660
t = 10 ms
t = 8.3 ms
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
1.14
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
1.63
Low level of forward slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
1.14
High level of forward slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.77
Ipk = 1100 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
2.26
VFM
kA2s
117
High level value of threshold voltage
Maximum forward voltage drop
A
6040
kA2s
V
mW
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
Ipk
SQUARE
PULSE
(A)
trr AT 25 % IRRM
(μs)
S10
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
dI/dt
(A/μs)
Vr
(V)
trr AT 25 % IRRM
(μs)
Qrr
(μC)
Irr
(A)
2.4
52
33
1.0
S15
1.5
S20
2.0
750
25
- 30
2.9
90
44
3.2
107
46
IFM
trr
t
dir
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TEST CONDITIONS
VALUES
TJ
-40 to 125
TStg
-40 to 150
RthJ-hs
DC operation single side cooled
0.16
DC operation double side cooled
0.08
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
UNITS
°C
K/W
4900 (500)
N (kg)
70
g
A-PUK (DO-200AA)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
0.010
0.012
0.016
0.024
0.042
0.011
0.013
0.016
0.024
0.042
0.008
0.013
0.018
0.025
0.042
0.008
0.013
0.018
0.025
0.042
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
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VS-SD303C..C Series
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130
SD303C..C Series
(Sin gle Side Cooled)
R th J-hs (DC) = 0.16 K/W
120
110
C o nduc tio n A ng le
100
90
180°
80
30°
60°
70
90°
120°
60
0
20
40
60
80 100 120 140 160 180
Maximum Allow able Heatsink Temperature (°C)
Maxim um Allow able Heatsink Tem perature (°C)
130
Vishay Semiconductors
SD303C..C Series
(D ouble Side Cooled)
R th J- hs (DC) = 0.08 K/W
120
110
100
90
C o ndu c tio n Pe rio d
80
70
30°
60
90°
120°
DC
0
100
200
300
400
500
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 30
8 00
S D 3 0 3 C ..C S e rie s
(S in g le Sid e C o o le d )
R thJ-hs (D C ) = 0 .1 6 K /W
1 20
1 10
1 00
C o ndu c tio n P e rio d
90
30°
80
60°
90°
70
120°
180°
60
DC
50
0
50
10 0
150
2 00
250
3 00
1 8 0°
1 2 0°
90°
60°
30°
7 00
6 00
5 00
3 00
C o nduc tio n An g le
2 00
SD 3 0 3 C ..C Se rie s
TJ = 1 2 5°C
1 00
0
0
SD303C..C Series
(D ouble Side Cooled)
R thJ-h s (DC) = 0.08 K/W
120
110
100
90
C o nduc tio n A ng le
80
70
60
50
30°
60°
90°
120°
180°
40
0
50
100 150 200 250 300 350 400
Average Forward Curren t (A)
Fig. 3 - Current Ratings Characteristics
50
1 0 0 1 5 0 20 0 25 0 30 0 3 5 0 4 00
A v e ra g e F o rw a rd C u rre n t (A )
Fig. 5 - Forward Power Loss Characteristics
1 00 0
M a xim u m A v e r a ge Fo rw a rd Po w e r Lo ss (W )
Fig. 2 - Current Ratings Characteristics
R M S Lim it
4 00
A v e ra g e F o r w a rd C u rre n t (A )
130
600
Average Forwa rd Curren t (A)
M a x im u m A v e ra g e F o rw a rd P o w e r Lo ss (W )
M a x im um A llo w a b le H ea t sin k T e m p e ra t u re (° C )
180°
40
Averag e Forw ard Current (A)
Maxim um Allow able Heatsink Tem perature (°C)
60°
50
DC
1 8 0°
1 2 0°
90°
60°
30°
9 00
8 00
7 00
6 00
5 0 0 R M S Lim it
4 00
C o ndu ct io n Pe rio d
3 00
SD 3 0 3 C ..C Se rie s
T J = 1 2 5°C
2 00
1 00
0
0
100
2 00
3 00
400
5 00
6 00
A v e ra g e Fo rw a rd C u r re n t (A )
Fig. 6 - Forward Power Loss Characteristics
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VS-SD303C..C Series
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10000
A t A n y Ra t e d Lo a d C o n d it io n A n d W ith
R a t e d V RRM A p p lie d F o llo w in g Su rg e .
In itia l TJ = 1 2 5°C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
50 0 0
45 0 0
SD 3 0 3 C ..C Se r ie s
In st a n t a n e o u s Fo rw a rd C urre n t (A )
P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A )
55 0 0
Vishay Semiconductors
40 0 0
35 0 0
30 0 0
25 0 0
SD 3 0 3 C ..C Se r ie s
1 000
TJ = 2 5 ° C
100
TJ = 1 2 5 ° C
20 0 0
10
1
10
0
1 00
4500
(K / W )
4000
3500
3000
2500
2000
S D 3 0 3 C ..C Se rie s
1500
0.01
0.1
4
5
6
7
8
St e a d y S ta t e V a lu e
R thJ-hs = 0 .1 6 K / W
thJ-hs
5000
3
1
M a x im u m N o n R e p e t itiv e S u rg e C u rre n t
V e r su s P u lse T ra in D u ra t io n .
In itia l TJ = 1 2 5 ° C
N o V o lt a g e R e a p p lie d
R a t e d V RR MR e a p p lie d
T ra n sie n t T h e rm a l I m p e d a n c e Z
P e a k H a lf Sine W a v e Fo rw a rd C urr e n t (A )
5500
2
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6000
1
In sta n t a n e o us Fo rw a rd V o lta g e (V )
N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulses (N )
1
( Sin g le Sid e C o o le d)
0 .1
R thJ-h s = 0 .0 8 K / W
( D o u b le S id e C o o le d )
( D C O p e ra tio n )
0 .0 1
SD 3 0 3 C ..C Se rie s
0 .0 0 1
0 .0 0 0 1 0 .0 0 1
0 .0 1
0 .1
1
10
10 0
Sq u a re W a v e Pu lse D ur at io n ( s)
P u lse T ra in D u ra t io n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1 20
V
F o rw a rd R e c o v e ry ( V )
1 00
FP
I
T = 1 2 5°C
J
80
60
TJ = 2 5°C
40
20
S D 3 0 3 C ..S2 0 C Se rie s
0
0
20 0
40 0
600
8 00
10 0 0
12 00
1 40 0
1 60 0
18 0 0
200 0
R at e O f f F a ll O f F o rw a rd C u rre n t d i/ d t ( A / u se c )
Fig. 11 - Typical Forward Recovery Characteristics
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3 .6
SD 3 0 3 C ..S1 0 C Se rie s
TJ = 1 2 5 °C , V r = 3 0 V
2 .6
I FM = 750 A
2 .4
Squ are Pu lse
2 .2
4 00 A
2
1 .8
200 A
1 .6
10
M a x im u m R e v e rse R e c o v e ry T im e - T rr ( µ s)
M a xim um R e ve rse R e c o v e ry T im e - Trr ( µ s)
2 .8
SD 3 0 3 C ..S 1 5 C S e rie s
TJ = 1 2 5 °C , V r = 3 0 V
3 .2
I FM = 75 0 A
2 .8
Sq ua re Pulse
2 .4
4 00 A
2
20 0 A
1 .6
10
100
100
R ate O f Fall O f Fo rwa rd C urre nt - di/dt (A /µs)
R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 12 - Recovery Time Characteristics
Fig. 15 - Recovery Time Characteristics
170
I FM = 750 A
13 0
Squ are Pulse
12 0
11 0
10 0
40 0 A
90
80
20 0 A
70
60
50
40
S D 3 0 3 C ..S 1 0 C Se rie s
TJ = 1 2 5 °C , V r = 3 0 V
30
20
10
0
20
40
60
80
100
Ra te O f Fall O f Fo rw ard Cu rrent - d i/dt (A /µs)
Fig. 13 - Recovery Charge Characteristics
M a xim u m R e v e rse R e co v e ry C h a rg e - Q r r ( µ C )
M a x im um Re v e rse R e c o v e ry C h a rg e - Q rr ( µ C )
14 0
4 00 A
80
70
20 0 A
60
50
40
30
140
130
120
SD 3 0 3 C ..S1 0 C Se rie s
TJ = 1 2 5 °C , V r = 3 0 V
20
20 30 40 5 0 60 70 80 90 10 0
Rate O f Fall O f Fo rwa rd Curre n t - di/d t (A/µs)
Fig. 14 - Recovery Current Characteristics
4 00 A
110
100
20 0 A
90
80
70
60
SD 3 0 3C ..S 1 5 C S e rie s
TJ = 1 2 5 ° C , V r = 3 0 V
50
10 20 30 4 0 50 60 70 80 9 0 100
Fig. 16 - Recovery Charge Characteristics
M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr (A )
M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr ( A )
Square Pulse
Squa re Pulse
150
1 30
I FM = 75 0 A
I FM = 75 0 A
Rate O f Fa ll O f Fo rw ard Current - di/dt (A /µs)
1 00
90
160
1 20
I FM = 7 50 A
Sq uare Pu lse
1 10
1 00
90
4 00 A
80
70
20 0 A
60
50
40
30
20
SD 3 0 3 C ..S1 5 C Se rie s
TJ = 1 2 5 ° C , V r = 3 0 V
10
1 0 20 30 40 50 60 70 80 90 1 00
R ate O f Fall O f Fo rw ard Cu rre nt - di/d t (A/µs)
Fig. 17 - Recovery Current Characteristics
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3 00
M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( µC )
Maxim um Rever se Recov ery Tim e - Trr (µs)
3.6
SD30 3C..S20C Series
TJ = 125 °C, V r = 30V
3.4
I FM = 75 0 A
3.2
Sq uare Pulse
3
4 00 A
20 0 A
2.8
2.6
2.4
10
10 0
I FM = 7 50 A
Sq ua re Pulse
2 50
2 00
4 00 A
1 50
20 0 A
1 00
SD 3 0 3 C ..S2 0 C Se rie s
TJ = 1 2 5 ° C , V r = 3 0 V
50
10 20 30 4 0 50 60 70 80 90 100
Rate O f Fall O f Fo rw ard Current - di/dt (A /µs)
Rate O f Fall O f Fo rwa rd Curre nt - di/dt (A /µs)
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
M a x im um R e v e rse R e c o v e ry C u rre n t - Irr (A )
130
I FM = 7 50 A
120
Sq uare Pu lse
110
100
4 00 A
90
80
2 00 A
70
60
50
SD 3 0 3 C ..S 2 0 C S e rie s
TJ = 1 2 5 °C , V r = 3 0 V
40
30
20
10 20 3 0 40 50 60 70 80 90 10 0
Rate O f Fall O f Forw ard Current - di/d t ( A/µs)
Fig. 20 - Recovery Current Characteristics
1 E4
P e a k F o rw a rd C u rre n t (A )
4
1
10
2 0 jo ule s pe r pulse
20 jo u le s p er pulse
2
1
0 .4
1 E3
0 .2
0 .2
0 .1
2
4
10
0.4
0.1
0. 04
0 .02
1 E2
0.0 1
tp
1 E1
1 E1
SD 3 0 3C ..S10 C S e ri es
Sin uso ida l Pul se
TJ = 1 25°C , V RRM = 1 1 2 0 V
d v /d t = 1 0 0 0V / µs
1E 2
tp
1 E3
P u lse B a se w id t h (µ s)
1 E4
1E1
SD 30 3 C ..S1 0 C Se rie s
Tr ape zo id al Pul se
TJ = 1 2 5°C , V RRM = 1 1 2 0V
d v / dt = 1 0 00 V/ µs ; di/ dt=5 0 A/ µ s
1 E2
1E3
1E4
P ulse Ba se w id t h (µ s)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
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1E4
20 jo ules pe r p ulse
20 jo ule s per p ulse
P e a k F o rw a rd C u rr e n t (A )
10
2
4
2
1
10
1
0 .4
0 .2
0 .1
1E3
4
0 .4
0.2
0 .04
0.0 2
1E2
tp
1E1
1E 1
SD 3 0 3 C..S15 C Se ri es
Sinu so idal P ulse
TJ = 1 2 5°C, V RRM = 1 7 6 0 V
dv / dt = 10 0 0 V/ µ s
1E2
tp
1E 3
SD 3 0 3 C..S1 5 C Se rie s
T rape zo idal Pu lse
T J = 1 2 5°C , V R RM = 1 7 6 0V
d v/ dt = 1 0 0 0 V/ µs ; di / dt= 5 0 A/ µ s
1E1
1 E4
1 E2
1 E3
1 E4
P u lse B a se w id th (µ s)
Pu lse B a se w id t h (µ s)
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
10
20 jo ule s per p ulse
20 jo u le s per pu lse
10
Pe a k F o rw a rd C ur re nt ( A )
4
4
2
2
1
1E3
1
0. 4
0 .4
0.2
0.1
tp
1E1
1E1
0 .2
0. 04
1E2
S D3 0 3 C..S2 0 C Se rie s
Sin uso ida l Pu lse
TJ = 1 2 5°C, V RRM= 1 7 60 V
dv / dt = 1 0 0 0 V/ µs
1E2
tp
1 E3
SD 3 0 3 C..S2 0 C Se rie s
T rape zo ida l Pul se
TJ = 1 2 5°C , V R R M = 1 7 6 0 V
dv / dt = 1 0 0 0 V/ µs ; di / dt= 5 0 A/ µ s
1E1
1 E4
1 E2
1E 3
1 E4
P u lse B a se w id th (µ s)
Pu lse B a se w id t h ( µ s)
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
30
3
C
25
S20
C
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
3 = fast recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
trr code (see Recovery Characteristics table)
8
-
C = PUK case A-PUK (DO-200AA)
LINKS TO RELATED DOCUMENTS
Dimensions
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Outline Dimensions
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Vishay Semiconductors
DO-200AA
42 (1.65) DIA. MAX.
DIMENSIONS in millimeters (inches)
3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
19 (0.75) DIA. MAX.
2 places
0.3 (0.01) MIN.
both ends
13.7 (0.54)
14.4 (0.57)
C
A
38 (1.50) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
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Revision: 01-Jan-2022
1
Document Number: 91000