VS-SD400C12C

VS-SD400C..C Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Hockey PUK Version), 800 A FEATURES • Wide current range • High voltage ratings up to 2400 V • High surge current capabilities • Diffused junction • Hockey PUK version • Case style A-PUK (DO-200AA) • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 A-PUK (DO-200AA) TYPICAL APPLICATIONS • Converters PRIMARY CHARACTERISTICS • Power supplies IF(AV) 800 A Package A-PUK (DO-200AA) Circuit configuration Single • Machine tool controls • High power drives • Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) Ths IF(RMS) Ths IFSM I2t VRRM VALUES UNITS 800 A 55 °C 1435 A 25 °C 50 Hz 8250 60 Hz 8640 A 50 Hz 340 60 Hz 311 Range 400 to 2400 V -40 to +190 °C TJ kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD400C..C VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 24 2400 2500 IRRM MAXIMUM AT TJ = 150 °C mA 15 Revision: 11-Jan-18 Document Number: 93547 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD400C..C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current  at heatsink temperature IF(AV) 180° conduction, half sine wave Double side (single side) cooled Maximum RMS forward current IF(RMS) 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing t = 8.3 ms I2t t = 10 ms t = 8.3 ms Maximum I2t for fusing A 55 (85) °C 1435 No voltage  reapplied 8250 50 % VRRM reapplied 6940 No voltage  reapplied UNITS 800 (425) A 8640 Sinusoidal half wave, initial TJ = TJ maximum 7265 340 311 50 % VRRM reapplied kA2s 241 220 I2t t = 0.1 to 10 ms, no voltage reapplied kA2s 3400 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.80 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.83 Low level value of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.55 High level value of forward slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 0.53 Maximum forward voltage drop VFM Ipk = 1930 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.86 V VALUES UNITS V m THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS TJ -40 to +190 TStg -55 to +200 RthJ-hs DC operation single side cooled 0.163 DC operation double side cooled 0.073 Mounting force, ± 10 % Approximate weight Case style See dimensions - link on page 5 °C K/W 4900 (500) N (kg) 70 g A-PUK (DO-200AA) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.017 0.018 0.011 0.012 120° 0.020 0.020 0.020 0.020 90° 0.025 0.025 0.027 0.027 60° 0.037 0.036 0.038 0.038 30° 0.064 0.062 0.065 0.062 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93547 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD400C..C Series www.vishay.com 20 0 SD 400C ..C Series (Sin gle Side C ooled) R thJ-hs (D C ) = 0.163 K/W 1 80 1 60 1 40 1 20 C o nd uctio n Angle 1 00 80 60 90° 60° 40 120° 30° 180° 20 0 100 200 30 0 4 00 50 0 6 00 M a xim um Allow able Heatsink Tem pera ture ( °C ) M a xim um A llow ab le He atsink Te m p era ture ( °C ) 2 00 Vishay Semiconductors SD 400C ..C Series (D ouble Side C ooled) R th J-hs (D C ) = 0.073 K/W 18 0 16 0 14 0 12 0 C o nd uction P erio d 10 0 30° 80 90° 120° 40 180° 20 DC 0 0 Fig. 1 - Current Ratings Characteristics 8 00 1 20 0 1 6 00 Fig. 4 - Current Ratings Characteristics 2000 SD 400C ..C Series (Single Side C ooled) R th J-hs (D C ) = 0.163 K/W 1 80 1 60 1 40 1 20 C o nd uction P erio d 1 00 80 60 90° 40 60° 120° 30° 180° DC 20 0 M a xim um Avera ge Forw ard Pow er Loss (W ) 2 00 M axim um Allow ab le Hea tsink Tem p era ture ( °C ) 40 0 A vera ge Forw a rd C urren t (A ) A vera ge Forw a rd C urrent (A) 1800 180° 120° 90° 60° 30° 1600 1400 1200 800 600 C o nd uctio n A n gle 400 SD 400C ..C Series TJ = 190 °C 200 0 0 1 0 0 2 0 0 3 0 0 4 0 0 50 0 6 0 0 70 0 8 00 90 0 140 120 C o nd u ction A ng le 100 80 30° 60 60° 90° 120° 40 180° 20 0 0 200 4 00 60 0 600 800 1000 800 Fig. 5 - Forward Power Loss Characteristics 1000 Avera ge Forw a rd C urrent (A ) Fig. 3 - Current Ratings Characteristics M a xim um A ve rag e Forw ard P ow er Loss (W ) 160 4 00 2500 SD 400C ..C Series (D oub le Sid e C ooled ) R thJ-h s (D C ) = 0.073 K/W 180 200 A vera ge Forw a rd C urren t (A ) Fig. 2 - Current Ratings Characteristics 200 RM S Lim it 1000 Averag e Forw ard C urrent (A) M a xim um Allow able Heatsink Tem pera ture ( °C ) 60° 60 DC 180° 120° 90° 60° 30° 2000 1500 RM S Lim it 1000 C o nd uctio n P erio d 50 0 SD 400C ..C Series TJ = 190 °C 0 0 4 00 80 0 1 2 00 1600 Avera g e Forw ard C urren t (A ) Fig. 6 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93547 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD400C..C Series www.vishay.com 9 000 A t An y Rated Loa d C on ditio n A nd W ith Ra ted V R R MAp p lied Follow in g Surg e. Initia l TJ = 190 °C @ 60 H z 0.0083 s @ 50 H z 0.0100 s 7 00 0 6 00 0 P eak H alf Sine W a ve F orw a rd C urre nt (A) Pea k H alf Sine W ave Forw ard C urren t (A ) 8 00 0 Vishay Semiconductors 5 00 0 4 00 0 3 00 0 SD 400C ..C Se ries 2 00 0 1 10 100 8 000 7 000 M axim um Non Repetitive Surge C urren t V ersus Pulse Train D ura tion . In itia l TJ = 190 °C No V olta g e Rea pp lied Ra te d VRRM Rea pp lied 6 000 5 000 4 000 3 000 SD 400C ..C Series 2 000 0 .01 0.1 1 Pulse Train D uration (s) Num b er O f E q ua l A m p litud e H a lf Cy cle C urrent P u lses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instan taneous Forw a rd C urrent (A) 10000 TJ = 25 °C TJ = 190 °C 1000 SD 400C ..C Se ries 10 0 0 .5 1 1 .5 2 2 .5 3 3 .5 4 4 .5 5 5 .5 6 6 .5 In stan ta ne ous F orw ard V o lta ge (V ) Fig. 9 - Forward Voltage Drop Characteristics Transient The rm al Im pedance Z thJ-hs (K/W ) 1 Steady State V alue R th J-hs = 0.163 K/W (Single Side C ooled) 0.1 R th J-hs = 0.073 K/W (D ouble Side C ooled) (D C O peration ) 0.0 1 SD 400C ..C Series 0 .001 0 .0 0 1 0 .0 1 0.1 1 10 Square W ave Pulse D uration (s) Fig. 10 - Thermal Impedance ZthJC Characteristics Revision: 11-Jan-18 Document Number: 93547 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD400C..C Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- SD 40 0 C 24 C 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 0 = standard recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case A-PUK (DO-200AA) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95248 Revision: 11-Jan-18 Document Number: 93547 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-200AA 42 (1.65) DIA. MAX. DIMENSIONS in millimeters (inches) 3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 19 (0.75) DIA. MAX. 2 places 0.3 (0.01) MIN. both ends 13.7 (0.54) 14.4 (0.57) C A 38 (1.50) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 17-Apr-2019 Document Number: 95248 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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