VS-SD400C..C Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Hockey PUK Version), 800 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style A-PUK (DO-200AA)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
A-PUK (DO-200AA)
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
800 A
Package
A-PUK (DO-200AA)
Circuit configuration
Single
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
Ths
IFSM
I2t
VRRM
VALUES
UNITS
800
A
55
°C
1435
A
25
°C
50 Hz
8250
60 Hz
8640
A
50 Hz
340
60 Hz
311
Range
400 to 2400
V
-40 to +190
°C
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD400C..C
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
24
2400
2500
IRRM MAXIMUM
AT TJ = 150 °C
mA
15
Revision: 11-Jan-18
Document Number: 93547
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VS-SD400C..C Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
at heatsink temperature
IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
Maximum RMS forward current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
t = 8.3 ms
I2t
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
A
55 (85)
°C
1435
No voltage
reapplied
8250
50 % VRRM
reapplied
6940
No voltage
reapplied
UNITS
800 (425)
A
8640
Sinusoidal half wave,
initial TJ = TJ maximum
7265
340
311
50 % VRRM
reapplied
kA2s
241
220
I2t
t = 0.1 to 10 ms, no voltage reapplied
kA2s
3400
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.80
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.83
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.55
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.53
Maximum forward voltage drop
VFM
Ipk = 1930 A, TJ = TJ maximum, tp = 10 ms sinusoidal
wave
1.86
V
VALUES
UNITS
V
m
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TEST CONDITIONS
TJ
-40 to +190
TStg
-55 to +200
RthJ-hs
DC operation single side cooled
0.163
DC operation double side cooled
0.073
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link on page 5
°C
K/W
4900 (500)
N (kg)
70
g
A-PUK (DO-200AA)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.017
0.018
0.011
0.012
120°
0.020
0.020
0.020
0.020
90°
0.025
0.025
0.027
0.027
60°
0.037
0.036
0.038
0.038
30°
0.064
0.062
0.065
0.062
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93547
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VS-SD400C..C Series
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20 0
SD 400C ..C Series
(Sin gle Side C ooled)
R thJ-hs (D C ) = 0.163 K/W
1 80
1 60
1 40
1 20
C o nd uctio n Angle
1 00
80
60
90°
60°
40
120°
30°
180°
20
0
100
200
30 0
4 00
50 0
6 00
M a xim um Allow able Heatsink Tem pera ture ( °C )
M a xim um A llow ab le He atsink Te m p era ture ( °C )
2 00
Vishay Semiconductors
SD 400C ..C Series
(D ouble Side C ooled)
R th J-hs (D C ) = 0.073 K/W
18 0
16 0
14 0
12 0
C o nd uction P erio d
10 0
30°
80
90°
120°
40
180°
20
DC
0
0
Fig. 1 - Current Ratings Characteristics
8 00
1 20 0
1 6 00
Fig. 4 - Current Ratings Characteristics
2000
SD 400C ..C Series
(Single Side C ooled)
R th J-hs (D C ) = 0.163 K/W
1 80
1 60
1 40
1 20
C o nd uction P erio d
1 00
80
60
90°
40
60°
120°
30°
180°
DC
20
0
M a xim um Avera ge Forw ard Pow er Loss (W )
2 00
M axim um Allow ab le Hea tsink Tem p era ture ( °C )
40 0
A vera ge Forw a rd C urren t (A )
A vera ge Forw a rd C urrent (A)
1800
180°
120°
90°
60°
30°
1600
1400
1200
800
600
C o nd uctio n A n gle
400
SD 400C ..C Series
TJ = 190 °C
200
0
0
1 0 0 2 0 0 3 0 0 4 0 0 50 0 6 0 0 70 0 8 00 90 0
140
120
C o nd u ction A ng le
100
80
30°
60
60°
90°
120°
40
180°
20
0
0
200
4 00
60 0
600
800
1000
800
Fig. 5 - Forward Power Loss Characteristics
1000
Avera ge Forw a rd C urrent (A )
Fig. 3 - Current Ratings Characteristics
M a xim um A ve rag e Forw ard P ow er Loss (W )
160
4 00
2500
SD 400C ..C Series
(D oub le Sid e C ooled )
R thJ-h s (D C ) = 0.073 K/W
180
200
A vera ge Forw a rd C urren t (A )
Fig. 2 - Current Ratings Characteristics
200
RM S Lim it
1000
Averag e Forw ard C urrent (A)
M a xim um Allow able Heatsink Tem pera ture ( °C )
60°
60
DC
180°
120°
90°
60°
30°
2000
1500
RM S Lim it
1000
C o nd uctio n P erio d
50 0
SD 400C ..C Series
TJ = 190 °C
0
0
4 00
80 0
1 2 00
1600
Avera g e Forw ard C urren t (A )
Fig. 6 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93547
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VS-SD400C..C Series
www.vishay.com
9 000
A t An y Rated Loa d C on ditio n A nd W ith
Ra ted V R R MAp p lied Follow in g Surg e.
Initia l TJ = 190 °C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
7 00 0
6 00 0
P eak H alf Sine W a ve F orw a rd C urre nt (A)
Pea k H alf Sine W ave Forw ard C urren t (A )
8 00 0
Vishay Semiconductors
5 00 0
4 00 0
3 00 0
SD 400C ..C Se ries
2 00 0
1
10
100
8 000
7 000
M axim um Non Repetitive Surge C urren t
V ersus Pulse Train D ura tion .
In itia l TJ = 190 °C
No V olta g e Rea pp lied
Ra te d VRRM Rea pp lied
6 000
5 000
4 000
3 000
SD 400C ..C Series
2 000
0 .01
0.1
1
Pulse Train D uration (s)
Num b er O f E q ua l A m p litud e H a lf Cy cle C urrent P u lses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instan taneous Forw a rd C urrent (A)
10000
TJ = 25 °C
TJ = 190 °C
1000
SD 400C ..C Se ries
10 0
0 .5 1 1 .5 2 2 .5 3 3 .5 4 4 .5 5 5 .5 6 6 .5
In stan ta ne ous F orw ard V o lta ge (V )
Fig. 9 - Forward Voltage Drop Characteristics
Transient The rm al Im pedance Z thJ-hs (K/W )
1
Steady State V alue
R th J-hs = 0.163 K/W
(Single Side C ooled)
0.1
R th J-hs = 0.073 K/W
(D ouble Side C ooled)
(D C O peration )
0.0 1
SD 400C ..C Series
0 .001
0 .0 0 1
0 .0 1
0.1
1
10
Square W ave Pulse D uration (s)
Fig. 10 - Thermal Impedance ZthJC Characteristics
Revision: 11-Jan-18
Document Number: 93547
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-SD400C..C Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
SD
40
0
C
24
C
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = standard recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
C = PUK case A-PUK (DO-200AA)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95248
Revision: 11-Jan-18
Document Number: 93547
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Outline Dimensions
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Vishay Semiconductors
DO-200AA
42 (1.65) DIA. MAX.
DIMENSIONS in millimeters (inches)
3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
19 (0.75) DIA. MAX.
2 places
0.3 (0.01) MIN.
both ends
13.7 (0.54)
14.4 (0.57)
C
A
38 (1.50) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 17-Apr-2019
Document Number: 95248
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