VS-SD400N/R Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 400 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC® types
• Compression bonded encapsulations
DO-9 (DO-205AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
400 A
Package
DO-9 (DO-205AB)
Circuit configuration
Single
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
VALUES
UNITS
480
A
TC
120
°C
50 Hz
8250
60 Hz
8640
50 Hz
340
60 Hz
311
Range
1600 to 2400
V
-40 to +190
°C
IF(RMS)
630
IFSM
I2t
VRRM
TJ
A
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD400N/R
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
16
1600
1700
20
2000
2100
24
2400
2500
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
Revision: 28-Apr-2020
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VS-SD400N/R Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
TEST CONDITIONS
180° conduction, half sine wave
I2√t
120
°C
480
A
100
°C
630
8250
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
A
8640
6940
Sinusoidal half wave,
initial
TJ = TJ maximum
7270
340
311
kA2s
241
100 % VRRM
reapplied
220
t = 0.1 to 10 ms, no voltage reapplied
3400
0.80
t = 8.3 ms
Maximum I2√t for fusing
A
t = 10 ms
t = 10 ms
I2t
UNITS
400
DC at 110 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
Low level value of threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ = TJ maximum
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
0.85
kA2√s
V
Low level value of forward
slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ = TJ maximum
0.55
High level value of forward
slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.51
VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.62
V
VALUES
UNITS
Maximum forward voltage drop
mW
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
TJ
-40 to +190
Maximum storage temperature range
TStg
-55 to +200
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.11
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
°C
K/W
Maximum allowed
mounting torque ± 10 %
Not-lubricated threads
Approximate weight
Case style
See dimensions (link at the end of datasheet
27
Nm
250
g
DO-9 (DO-205AB)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.020
0.013
120°
0.023
0.023
90°
0.029
0.031
60°
0.042
0.044
30°
0.073
0.074
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 28-Apr-2020
Document Number: 93548
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD400N/R Series
190
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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SD400N/ R Series
RthJC (DC) = 0.11 K/ W
180
170
160
Conduction Angle
150
140
130
120
60°
90°
30°
120°
180°
110
0
50 100 150 200 250 300 350 400 450
190
SD400N/ R Series
RthJC (DC) = 0.11 K/ W
180
170
160
Conduction Period
150
140
130
120
90°
60°
110
180°
DC
100
0
100
Average Forward Current (A)
200
300
400
500 600
700
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
550
.04
K/
K/W
W
K/
R
-Δ
RMS Limit 0.4
=0
3
SA
W
0.
300
K/
W
350
2
K/
400
1
0.
180°
120°
90°
60°
30°
450
R th
500
0.
Maximum Average Forward Power Loss (W)
120°
30°
W
250
0.6
200
Conduction Angle
150
100
SD400N/R Series
TJ = 190 °C
50
K/W
1K/W
1.8 K/W
0
50 100 150 200 250 300 350 400 30 50 70 90 110 130 150 170 190
0
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
800
DC
180°
120°
90°
60°
30°
1
K/
W
04
0.
400 RMS Limit
300
Conduction Period
0.4
K/
W
R
-Δ
0.2
0.3
W
K/
500
0.
=
600
SA
700
R th
Maximum Average Forward Power Loss (W)
Fig. 3 - Forward Power Loss Characteristics
K/
W
K/W
0.6
K/W
1K/W
SD400N/R Series 1.8
K/W
TJ = 190°C
200
100
0
0
100
200
300
400 500
600 700
Average Forward Current (A)
30 50 70 90 110 130 150 170 190
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
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Document Number: 93548
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VS-SD400N/R Series
8000
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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At Any Rated Load Condition And With
Rated VRRMApplied Following Surge.
Initial TJ = 190°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
7000
6000
5000
4000
3000
SD400N/ R Series
2000
1
10
100
9000
8000
7000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 190°C
No Voltage Reapplied
Rated VRRM Reapplied
6000
5000
4000
3000
2000
1000
0.01
SD400N/ R Series
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10000
SD400N/ R Series
1000
TJ = 25°C
TJ = 190°C
100
0.5
1
1.5
2
2.5
Instantaneous Forward Voltage (V)
Transient Thermal Impedance Z thJC (K/ W)
Fig. 7 - Forward Voltage Drop Characteristics
1
0.1
Steady State Value:
RthJC = 0.11 K/ W
(DC Operation)
0.01
SD400N/ R Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Revision: 28-Apr-2020
Document Number: 93548
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD400N/R Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
SD
40
0
N
24
P
C
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = standard recovery
5
-
N = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = stud base DO-9 (DO-205AB) 3/4" 16UNF-2A
8
-
C = ceramic housing
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95301
Revision: 28-Apr-2020
Document Number: 93548
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9)
DIMENSIONS in millimeters (inches)
Ceramic housing
19 (0.75)
MAX.
4 (0.16)
MAX.
39 (1.53)
MAX.
9.5 (0.37) MIN.
DIA. 8.5 (0.33) NOM.
C.S. 35 mm2
(0.054 s.i.)
210 (8.27)
± 10 (0.39)
DIA. 27.5
(1.08) MAX.
82 (3.23)
MIN.
SW 32
16 (0.63)
MAX.
21 (0.82)
MAX.
3/4"-16UNF-2A*
Document Number: 95301
Revision: 09-Apr-08
*For metric device: M16 x 1.5
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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