VS-SD403C12S15C

VS-SD403C..C Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 430 A FEATURES • High power fast recovery diode series • 1.0 μs to 1.5 μs recovery time • High voltage ratings up to 1600 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC® A-PUK (DO-200AA) A-PUK (DO-200AA) • Maximum junction temperature 125 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 430 A Package A-PUK (DO-200AA) Circuit configuration Single TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) Ths IF(RMS) Ths IFSM I2t VRRM trr VALUES UNITS 430 A 55 °C 675 A 25 °C 50 Hz 6180 60 Hz 6470 50 Hz 191 60 Hz 175 Range 400 to 1600 V 1.0, 1.5 μs TJ A kA2s 25 °C -40 to +125 TJ ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD403C..S10C VS-SD403C..S15C VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 IRRM MAXIMUM AT TJ = 125 °C mA 35 Revision: 15-Jan-18 Document Number: 93175 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD403C..C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at heatsink temperature TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled IF(AV) IF(RMS) Maximum RMS current Maximum peak, one-cycle ,  non-repetitive forward current 675 t = 10 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t °C 6180 t = 8.3 ms I2t A 55 (75) t = 10 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 5200 5445 Sinusoidal half wave, initial TJ = TJ maximum 191 175 135 t = 0.1 to 10 ms, no voltage reapplied 1910 t = 8.3 ms VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 1.00 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 1.20 Low level of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.56 High level of forward slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 0.70 Ipk = 1350 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 1.83 VFM kA2s 123 Low level value of threshold voltage Maximum forward voltage drop A 6470 100 % VRRM reapplied t = 10 ms UNITS 430 (210) 25 °C heatsink temperature double side cooled t = 8.3 ms IFSM Maximum I2t for fusing VALUES kA2s V m V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE 1.0 S15 1.5 IFM Ipk SQUARE PULSE (A) trr AT 25 % IRRM (μs) S10 TYPICAL VALUES AT TJ = 125 °C TEST CONDITIONS dI/dt (A/μs) 750 25 Vr (V) trr AT 25 % IRRM (μs) -30 Qrr (μC) Irr (A) 2.4 52 33 2.9 90 44 trr t dir dt Qrr IRM(REC) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS VALUES TJ -40 to 125 TStg -40 to 150 RthJ-hs DC operation single side cooled 0.16 DC operation double side cooled 0.08 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet UNITS °C K/W 4900 (500) N (kg) 70 g A-PUK (DO-200AA) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.011 0.008 0.008 120° 0.012 0.013 0.013 0.013 90° 0.016 0.016 0.018 0.018 60° 0.024 0.024 0.025 0.025 30° 0.042 0.042 0.042 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 15-Jan-18 Document Number: 93175 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD403C..C Series www.vishay.com Vishay Semiconductors 130 S D 4 0 3 C ..C S e rie s (S in g le Sid e C o o le d ) R thJ- hs (D C ) = 0 .1 6 K / W 120 110 100 C o nduc tio n An g le 90 80 1 80° 60° 30° 90° 1 20° 70 0 50 100 1 50 2 00 2 50 M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e (° C ) M a x im u m A llo w a b le He a t sin k T e m p e ra t ure (°C ) 130 SD 4 0 3 C ..C Se rie s (D o u b le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 8 K / W 120 110 100 90 C o ndu c tio n Pe rio d 80 70 60 50 30 ° 0 1 8 0° DC 100 2 00 30 0 4 00 5 00 600 7 00 A v e ra g e F o rw a r d C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 800 S D 4 0 3 C ..C Se rie s (S in gle Sid e C o o le d ) R thJ-h s (D C ) = 0 .1 6 K /W 120 110 100 C o ndu ctio n Pe rio d 90 80 30 ° 60° 70 9 0° 1 2 0° 60 180 ° DC 2 50 30 0 50 0 50 100 150 20 0 35 0 Maxim um Average Forw ard Pow er Loss (W ) 130 M a x im um A llo w a b le H e at sin k T e m p e ra tu re ( °C ) 90° 1 2 0° 40 A v e ra g e F o rw a r d C u rre n t (A ) 180° 120° 90° 60° 30° 700 600 500 RM S Limit 400 300 C o ndu c tio n Ang le 200 SD403C..C Series TJ = 125°C 100 0 0 A v e ra g e F o r w a rd C u rr e n t (A ) 50 100 150 200 250 300 350 400 450 Average Forward Curren t (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics 1 10 0 SD403C..C Series (Doub le Side Cooled) R th J-hs (DC) = 0.08 K/W 120 110 100 C o nd uctio n A ng le 90 80 30° 70 60° 90° 120° 180° 60 50 0 50 100 150 200 250 300 350 400 450 Average Forward Curren t (A) Fig. 3 - Current Ratings Characteristics M a x im um A v e ra g e Fo rw a rd Po w e r Lo ss (W ) 130 Maxim um Allowable Heatsink Tempera ture (°C ) 60° 1 00 0 DC 1 8 0° 1 2 0° 90° 60° 30° 90 0 80 0 70 0 60 0 50 0 RM S Lim it 40 0 C o ndu ctio n Pe rio d 30 0 20 0 SD 4 0 3 C ..C S e r ie s TJ = 1 2 5° C 10 0 0 0 1 00 20 0 3 00 400 5 00 60 0 7 00 A v e ra g e F o rw a rd C u rre n t (A ) Fig. 6 - Forward Power Loss Characteristics Revision: 15-Jan-18 Document Number: 93175 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD403C..C Series www.vishay.com 1 A t A n y R a t e d Lo a d C o n d it io n A n d W it h R a t e d V RR MA p p lie d Fo llo w in g S u rg e . In it ia l T J = 1 2 5° C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 5 50 0 5 00 0 4 50 0 4 00 0 3 50 0 3 00 0 S D 4 0 3 C ..C S e rie s 2 50 0 2 00 0 1 10 1 00 T ra n sie n t T h e rm al Im pe d an c e Z thJ-hs ( K / W ) P e a k H a lf Sin e W a v e F o rw a rd C u rre n t (A ) 6 00 0 Vishay Semiconductors SD 4 0 3 C ..C S e rie s 0 .1 S te a d y St a t e V a lu e R t hJ-hs = 0 .1 6 K /W 0. 01 ( S in g le Sid e C o o le d ) R thJ- hs = 0 .0 8 K /W ( D o ub le S id e C o o le d ) ( D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 5000 4000 3000 2000 SD 403C..C Series 1000 0 .0 1 0 .1 10 0 SD 4 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 ° C ; V r = 3 0 V 2 .6 I FM = 7 50 A 2 .4 Squa re Pulse 2 .2 40 0 A 2 20 0 A 1 .8 1 .6 1 Pulse Train Duration (s) 10 100 Rat e O f Fall O f Forw ard Current - d i/dt (A /µs) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 10 - Recovery Time Characteristics 14 0 T J = 2 5 °C T J = 1 2 5 °C 1000 1 00 SD 4 0 3 C ..C Se r ie s 10 0 1 2 3 4 5 6 7 In st an ta n e o us Fo rw ar d V o lta ge ( V ) Fig. 9 - Forward Voltage Drop Characteristics M a xim um R e v e rse R e c o v e ry C h a rg e - Q rr (µ C ) 1 0 0 00 Ins tan ta ne o u s Fo rw ard C urr e nt ( A ) 10 2 .8 Maxim um Non Rep etitive Surge Current Versus Pulse Train D uration . Initial TJ = 125°C No Voltage Reapplied Rated V RR MReapplied 6000 1 Fig. 1 - Thermal Impedance ZthJ-hs Characteristics M a x im u m R e ve rse R e c o v e ry T im e - T rr ( µ s) Peak H alf Sine W ave Forwa rd Current (A) 7000 0 .1 S q u a re W a v e P u lse D u ra tio n ( s) Num be r O f Equ al A m plitud e Ha lf Cy c le C urre nt Pulse s (N ) 13 0 I FM = 7 50 A 12 0 Squa re Pulse 11 0 4 00 A 10 0 90 80 200 A 70 60 50 40 SD 4 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 ° C ; V r = 3 0 V 30 20 10 0 20 40 60 80 100 R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /µs) Fig. 11 - Recovery Charge Characteristics Revision: 15-Jan-18 Document Number: 93175 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD403C..C Series www.vishay.com Vishay Semiconductors 170 M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( µC ) Maxim um Rev erse Recov ery Cur ren t - Irr (A) 90 I FM = 750 A 80 Squa re Pu lse 4 00 A 70 20 0 A 60 50 40 30 SD40 3C..S10C Series TJ = 12 5 °C; V r = 30V 20 10 10 20 30 4 0 50 60 7 0 80 9 0 10 0 Sq uare Pulse 150 140 130 40 0 A 120 110 100 20 0 A 90 80 70 SD 4 0 3 C ..S1 5 C Se rie s TJ = 1 2 5 ° C ; V r = 3 0 V 60 50 0 20 40 60 80 10 0 Rate O f Fall O f Fo rw ard C urre nt - d i/dt ( A/µs) Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs) Fig. 12 - Recovery Current Characteristics Fig. 14 - Recovery Charge Characteristics 3 .5 130 M a x im um Re v e rse Re c o v e ry C u rre n t - Irr (A ) M a x im u m R e v e rse R e c o v e ry T im e - T rr ( µ s) I FM = 75 0 A 160 S D 4 0 3 C ..S1 5 C S e rie s TJ = 1 2 5 °C ; V r = 3 0 V 3 I FM = 750 A Sq uare Pulse 2 .5 400 A 2 2 00 A 1 .5 10 10 0 120 I FM = 750 A 110 Squ are Pu lse 100 90 40 0 A 80 70 2 00 A 60 50 40 30 SD 4 0 3 C ..S1 5 C S e rie s TJ = 1 2 5 °C ; V r = 3 0 V 20 10 1 0 20 3 0 40 5 0 60 70 80 9 0 10 0 R ate O f Fa ll O f Forw ard C urre nt - di/dt ( A/µs) Rate O f Fall O f Fo rw ard C urren t - di/d t (A/µs) Fig. 13 - Recovery Time Characteristics Fig. 15 - Recovery Current Characteristics 1E 4 20 jo u le s p e r p ulse Pe a k Fo rw ard C u rre n t (A ) 1 2 4 20 jo ule s p er pulse 10 1 0 .4 0.2 0 .1 1E 3 0.2 2 4 10 0.4 0.1 0. 04 0. 04 0 .02 0 .01 1E 2 tp 1E 1 1E 1 SD 40 3 C ..S1 0 C S e ri es Si nu soi dal Pul se T J = 1 2 5°C , V RRM = 8 0 0 V d v/ d t = 10 0 0V / µs 1 E2 tp 1E3 P u lse B a se w id t h (µ s) 1E 4 1E1 SD 4 0 3 C..S1 0C Se rie s T rape zo idal Pulse TJ = 1 2 5° C, V R R M = 8 0 0 V d v/ dt = 1 0 0 0 V/ µs ; d i/ dt= 5 0 A / µs 1 E2 1E3 1E4 P ulse B a se w id t h (µ s) Fig. 16 - Maximum Total Energy Loss Per Pulse Characteristics Revision: 15-Jan-18 Document Number: 93175 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD403C..C Series www.vishay.com Vishay Semiconductors 1E4 P e a k F o r w a rd C u rre n t (A ) 2 0 jo ule s pe r pu lse 1 2 4 10 1 0.4 2 0 jo ules pe r pulse 0 .2 0. 1 0 .1 0 .04 0 .02 1E2 tp 1E1 1E1 10 0 .4 0.2 1E3 2 4 SD 4 0 3. .S15 C Se ri es Si nu so idal Pu ls e T J = 1 2 5°C , V R R M = 1 1 2 0 V dv / d t = 10 0 0 V/ µ s 1 E2 SD 4 0 3 C..S1 5C Se rie s Trape zo id al Puls e TJ = 1 2 5° C, V RR M = 11 20 V d v/ dt = 1 0 0 0 V/ µs ; di / dt= 5 0 A/ µ s tp 1 E3 1 E1 1 E4 1E2 1E3 1 E4 P u lse Ba se w id t h (µ s) Pu lse Ba se w id t h (µ s) Fig. 17 - Maximum Total Energy Per Pulse Characteristics ORDERING INFORMATION TABLE Device code VS- SD 40 3 C 16 S15 C 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 3 = fast recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - trr code (see Recovery Characteristics table) 8 - C = PUK case A-PUK (DO-200AA) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95248 Revision: 15-Jan-18 Document Number: 93175 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-200AA 42 (1.65) DIA. MAX. DIMENSIONS in millimeters (inches) 3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 19 (0.75) DIA. MAX. 2 places 0.3 (0.01) MIN. both ends 13.7 (0.54) 14.4 (0.57) C A 38 (1.50) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 17-Apr-2019 Document Number: 95248 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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